Thermoelectric Effects in Correlated Matter Sriram Shastry UCSC Santa Cruz Work supported by NSF DMR 0408247 Work supported by DOE, BES DE-FG02- 06ER46319.

Slides:



Advertisements
Similar presentations
Semiconductors Physics 355 computers  air bags  Palm pilots  cell phones  pagers  DVD players  TV remotes  satellites  fiber networks  switches.
Advertisements

Carrier Transport Phenomena
Solid state Phys. Chapter 2 Thermal and electrical properties 1.
Sriram Shastry UCSC, Santa Cruz, CA Thermoelectric and Hall transport in Correlated Matter: A new approach Work supported by DMR UC Irvine, April.
Mike Peterson, Jan Haerter, UCSC, Santa Cruz, CA Theory of thermoelectric properties of Cobaltates Work supported by NSF DMR ICMM Kolkata 14 Dec.
What We’ve Learned So Far A Review of Topics on Test 2.
The Hall Number, Optical Sum Rule and Carrier Density for the t-t’-J model Sriram Shastry, Jan Haerter UC Santa Cruz DOE.
Strongly Correlated Electron Systems a Dynamical Mean Field Perspective:Points for Discussion G. Kotliar Physics Department and Center for Materials Theory.
Berkeley June 5, 2008 Sriram Shastry, UCSC, Santa Cruz, CA Thermoelectric Transport Coefficients Sodium Cobaltates Collaborators: Mike Peterson (Maryland)
1 Motivation (Why is this course required?) Computers –Human based –Tube based –Solid state based Why do we need computers? –Modeling Analytical- great.
Intro to Statistics for the Behavioral Sciences PSYC 1900 Lecture 6: Correlation.
1 Applications of statistical physics to selected solid-state physics phenomena for metals “similar” models for thermal and electrical conductivity for.
Thermal Properties of Crystal Lattices
Physics 101: Lecture 26, Pg 1 Physics 101: Lecture 26 Temperature & Thermal Expansion l Today’s lecture will cover Textbook Sections
The centrality dependence of elliptic flow Jean-Yves Ollitrault, Clément Gombeaud (Saclay), Hans-Joachim Drescher, Adrian Dumitru (Frankfurt) nucl-th/
Putting Electrons to Work Doping and Semiconductor Devices.
Metals: Free Electron Model Physics 355. Free Electron Model Schematic model of metallic crystal, such as Na, Li, K, etc.
Transport of heat and charge at a z=2 Quantum Critical Point: Violation of Wiedemann-Franz Law and other non-fermi-liquid properties. A.Vishwanath UC Berkeley.
Computational Approaches Computational Approaches
Why General Relativity is like a High Temperature Superconductor Gary Horowitz UC Santa Barbara G.H., J. Santos, D. Tong, , and to appear Gary.
Techniques for determination of deep level trap parameters in irradiated silicon detectors AUTHOR: Irena Dolenc ADVISOR: prof. dr. Vladimir Cindro.
Chapter 5: Field Effect Transistor
MgB2 Since 1973 the limiting transition temperature in conventional alloys and metals was 23K, first set by Nb3Ge, and then equaled by an Y-Pd-B-C compound.
ECE 250 – Electronic Devices 1 ECE 250 Electronic Device Modeling.
General Relativity and the Cuprates Gary Horowitz UC Santa Barbara GH, J. Santos, D. Tong, , GH and J. Santos, Gary Horowitz.
Review for Exam 2 Spring, 2002 Charges in Conductors  Electric fields are created when positive charges and negative charges are separated  A uniform.
Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)
1 Free Electron Model for Metals Metals are very good at conducting both heat and electricity. A lattice of in a “sea of electrons” shared between all.
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 9 Temperature Dependence of Carrier Concentrations L7 and L8: how to get electron.
Thermoelectric properties of ultra-thin Bi 2 Te 3 films Jesse Maassen and Mark Lundstrom Network for Computational Nanotechnology, Electrical and Computer.
Chap. 41: Conduction of electricity in solids Hyun-Woo Lee.
QGP and Hadrons in Dense medium: a holographic 2nd ATHIC based on works with X. Ge, Y. Matsuo, F. Shu, T. Tsukioka(APCTP), archiv:
Modeling thermoelectric properties of TI materials: a Landauer approach Jesse Maassen and Mark Lundstrom Network for Computational Nanotechnology, Electrical.
Measures of Dispersion
Educ 200C Wed. Oct 3, Variation What is it? What does it look like in a data set?
Free Electron Model for Metals
Lecture 1 OUTLINE Semiconductors, Junction, Diode characteristics, Bipolar Transistors: characteristics, small signal low frequency h-parameter model,
Free electron theory of Metals
Topic #1: Bonding – What Holds Atoms Together?
Electron & Hole Statistics in Semiconductors A “Short Course”. BW, Ch
Schottky Barrier Diode One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky.
Example x y We wish to check for a non zero correlation.
3/23/2015PHY 752 Spring Lecture 231 PHY 752 Solid State Physics 11-11:50 AM MWF Olin 107 Plan for Lecture 23:  Transport phenomena and Fermi liquid.
1 Material Model 4 Single Electron Band Structure in Strained Layers.
MODULE 23 (701) REACTIONS IN SOLUTION: DIFFUSION AND CONDUCTION In the liquid phase, free space is very limited. Each molecule interacts strongly with.
Lecture 9 Correction! (Shout out of thanks to Seok!) To get the wave equation for v when C 13 ≠ C 12, it is NOT OK to just do a cyclic permutation. That’s.
Chapter 7 The electronic theory of metal Objectives At the end of this Chapter, you should: 1. Understand the physical meaning of Fermi statistical distribution.
Thermal Conduction in Metals and Alloys Classical Approach From the kinetic theory of gases ) where, l is mean free path.
Gauge/gravity duality in Einstein-dilaton theory Chanyong Park Workshop on String theory and cosmology (Pusan, ) Ref. S. Kulkarni,
Fatemeh (Samira) Soltani University of Victoria June 11 th
Energy Bands and Charge Carriers in Semiconductors
The London-London equation
Conduction of Electricity in Solids
Terbium Ion Doping in Ca3Co4O9: A Step Towards High-Performance Thermoelectric Materials NSF DMR # Shrikant Saini, Yinong Yin, Ashutosh Tiwari;
Introduction to Semiconductor Material and Devices.
Degenerate Semiconductors
SEMICONDUCTORS Semiconductors Semiconductor devices
Giant Superconducting Proximity Effect in Composite Systems Chun Chen and Yan Chen Dept. of Physics and Lab of Advanced Materials, Fudan University,
Insulators, Semiconductors, Metals
Heat capacity of the lattice
Volume 1, Issue 4, Pages (December 2017)
Semiconductor crystals
Lattice Vibrational Contribution
Thermal Energy & Heat Capacity:
Dynamical mean field theory: In practice
第19回 応用物理学科セミナー 日時: 2月8日(月) 16:30 – 17:30 場所:葛飾キャンパス研究棟8F第2セミナー室
Thermal Sensors Q = mcT, where Q is the amount of heat in J, T is temperature in K, m is the mass in kg, c is the specific heat capacity in J/(Kg.K), and.
Volume 1, Issue 4, Pages (December 2017)
ELECTRICAL PROPERTIES
Conduction of Electricity in Solids
Presentation transcript:

Thermoelectric Effects in Correlated Matter Sriram Shastry UCSC Santa Cruz Work supported by NSF DMR Work supported by DOE, BES DE-FG02- 06ER46319 Work supported by NSF DMR Aspen Center for Physics: 14 August, 2008

Intro High Thermoelectric power is very desirable for applications. High Thermoelectric power is very desirable for applications. Usually the domain of semiconductor industry, e.g. Bi2Te3. However, recently correlated matter has found its way into this domain. Usually the domain of semiconductor industry, e.g. Bi2Te3. However, recently correlated matter has found its way into this domain. Heavy Fermi systems (low T), Mott Insulator Junction sandwiches (Harold Hwang 2004) Heavy Fermi systems (low T), Mott Insulator Junction sandwiches (Harold Hwang 2004) Sodium Cobaltate NaxCoO2 at x ~.7 Terasaki, Ong, ….. Sodium Cobaltate NaxCoO2 at x ~.7 Terasaki, Ong, …..

What is the Seebeck Coefficient S? T h ermopower S ( ! ) = L 12 ( ! ) TL 11 ( ! ) L oren t z N um b er L ( ! ) = · zc ( ! ) T ¾ ( ! ) F i gureo f M er i t Z ( ! ) T = S 2 ( ! ) L ( ! ) : ( 1 )

Similarly thermal conductivity and resitivity are defined with appropriate current operators. The computation of these transport quantities is brutally difficult for correlated systems. Hence seek an escape route……….That is the rest of the story!

Triangular lattice Hall and Seebeck coeffs: (High frequency objects) Notice that these variables change sign thrice as a band fills from 0->2. Sign of Mott Hubbard correlations.

Considerable similarity between Hall constant and Seebeck coefficients. Both gives signs of carriers---(Do they actually ???) Zero crossings tell a tale. These objects are sensitive to half filling and hence measure Mott Hubbard hole densities. Brief story of Hall constant to motivate the rest. The Hall constant at finite frequencies: S Shraiman Singh High T_c and triangular lattices---

< e R H ( 0 ) = R ¤ H ( ­ ) + 2 ¼ Z ­ 0 = m R H ( º ) º d º : Consider a novel dispersion relation (Shastry ArXiv.org ) Here  is a cutoff frequency that determines the RH*. LHS is measurable, and the second term on RHS is beginning to be measured (recent data exists). The smaller the , closer is our RH* to the transport value. We can calculate RH* much more easily than the transport value. For the tJ model, it would be much closer to the DC than for Hubbard type models. This is obvious since cut off is max{t,J} rather than U!! ~ ! À fj t j ; U g max ~ ! À fj t j ; J g max :

New Formalism SS (2006) is based on a finite frequency calculation of thermoelectric coefficients. Motivation comes from Hall constant computation (Shastry Shraiman Singh Kumar Shastry 2003) Perhaps  dependence of R_H is weak compared to that of Hall conductivity. Very useful formula since Captures Lower Hubbard Band physics. This is achieved by using the Gutzwiller projected fermi operators in defining J’s Exact in the limit of simple dynamics ( e.g few frequencies involved), as in the Boltzmann eqn approach. Can compute in various ways for all temperatures ( exact diagonalization, high T expansion etc…..) We have successfully removed the dissipational aspect of Hall constant from this object, and retained the correlations aspect. Very good description of t-J model. This asymptotic formula usually requires  to be larger than J ½ xy ( ! ) = ¾ xy ( ! ) ¾ xx ( ! ) 2 ! BR ¤ H f or! ! 1 R ¤ H = R H ( 0 ) i n D ru d e t h eory ANALOGY between Hall Constant and Seebeck Coefficients

Need similar high frequency formulas for S and thermal conductivity. Requirement::: L ij (  ) Did not exist, so had lots of fun with Luttinger’s formalism of a gravitational field, now made time dependent. K t o t = X K ( r )( 1 + Ã ( r ; t )) r ( Ã ( r ; T )) » rT ( r ; t )= T

i = 1 i = 2 C h arge E nergy I i ^ J x ( q x ) ^ J Q x ( q x ) U i ½ ( ¡ q x ) K ( ¡ q x ) Y i E x q = i q x Á q i q x à q : ( 1 ) L ij ( ! ) = i ­ ! c " h T ij i ¡ X n ; m p m ¡ p n " n ¡ " m + ! c ( I i ) nm ( I j ) mn # ; ( 1 ) h T ij i = ¡ l i m q x ! 0 h[ I i ; U j ]i 1 q x : ( 2 )

We thus see that a knowledge of the three operators gives us a interesting starting point for correlated matter:

¿ xx = q 2 e ~ X ´ 2 x t ( ~ ´ ) c y ~ r + ~ ´ ; ¾ c ~ r ; ¾ or = q 2 e ~ X ~ k d 2 " ~ k dk 2 x c y ~ k ; ¾ c ~ k ; ¾

h © xx i = q e c k B T P m ; ¾ ; ~ k G ¾ ( k ; i ! m ) h d dk x ( v x k ( " k ¡ ¹ )) + d 2 " k dk 2 x § ¾ ( k ; i ! m ) i Unpublished- For Hubbard model using “Ward type identity” can show a simpler result for \Phi.

Hydrodynamics of energy and charge transport in a band model: This involves the fundamental operators in a crucial t + 1 ¿ c ¾ ± J ( r ) = 1 ­ h ¿ xx i · 1 q 2 n ( ¡ r ½ ) ¡ r Á ( r ) ¸ + 1 ­ h © xx i · 1 C ( T ) ( ¡ rK ( r )) ¡ rª t + 1 ¿ E ¾ ± J Q ( r ) = 1 ­ h © xx i · 1 q 2 n ( ¡ r ½ ) ¡ r Á ( r ) ¸ + 1 ­ h £ xx i · 1 C ( T ) ( ¡ rK ( r )) ¡ rª ¸ Einstein diffusion term of charge Energy diffusion term t + rJ ( r ) = K ( r t + rJ Q ( r ) = p ex t ( r ) Input power density These eqns contain energy and charge diffusion, as well as thermoelectric effects. Potentially correct starting point for many new nano heating expts with lasers.

And now for some results: Triangular lattice t-J exact diagonalization (full spectrum) Collaboration and hard work by:- J Haerter, M. Peterson, S. Mukerjee (UC Berkeley)

How good is the S* formula compared to exact Kubo formula? A numerical benchmark: Max deviation 3% anywhere !! As good as exact!

Results from this formalism: Prediction for t>0 material Comparision with data on absolute scale! T linear Hall constant for triangular lattice predicted in 1993 by Shastry Shraiman Singh! Quantitative agreement hard to get with scale of “t”

S* and the Heikes Mott formula (red) for Na_xCo O2. Close to each other for t>o i.e. electron doped cases

Predicted result for t<0 i.e. fiducary hole doped CoO_2 planes. Notice much larger scale of S* arising from transport part (not Mott Heikes part!!). Enhancement due to triangular lattice structure of closed loops!! Similar to Hall constant linear T origin.

Predicted result for t<0 i.e. fiducary hole doped CoO_2 planes. Different J higher S.

Predictions of S* and the Heikes Mott formula (red) for fiducary hole doped CoO2. Notice that S* predicts an important enhancement unlike Heikes Mott formula Heikes Mott misses the lattice topology effects.

Z*T computed from S* and Lorentz number. Electronic contribution only, no phonons. Clearly large x is better!! Quite encouraging.