Applications of MeV Ion Channeling and Backscattering to the Study of Metal/Metal Epitaxial Growth Richard J. Smith Physics Department Montana State University.

Slides:

Advertisements

Similar presentations

Speaker: Xiangshi Yin Instructor: Elbio Dagotto Time: April 15, 2010 (Solid State II project) Quantum Size Effect in the Stability and Properties of Thin.

Advertisements

2 nd FEZA School On Zeolites 1-2 September 2008, Paris X-ray photoelectron spectroscopy and its use for solid materials Jacques C. Védrine.

International Workshop on High-Volume Experimental Data, Computational Modeling and Visualization Xiangshan, October 2011 Determining the composition.

Plan : lattices Characterization of thin films and bulk materials using x-ray and electron scattering V. Pierron-Bohnes IPCMS-GEMME, BP 43, 23 rue du Loess,

Electron Spectroscopies of InN grown by HPCVD Department of Physics and Astronomy Georgia State University Atlanta, Georgia Rudra P. Bhatta Solid State.

Influence of Substrate Surface Orientation on the Structure of Ti Thin Films Grown on Al Single- Crystal Surfaces at Room Temperature Richard J. Smith.

1 EFFECTS OF CARBON REDEPOSITION ON TUNGSTEN UNDER HIGH-FLUX, LOW ENERGY Ar ION IRRADITAION AT ELEVATED TEMPERATURE Lithuanian Energy Institute, Lithuania.

CMSELCMSEL Hanyang Univ. Differences in Thin Film Growth Morphologies of Co-Al Binary Systems using Molecular Dynamics Simulation : In cases of Co on Co(001),

Grazing incident X-ray Diffraction (XRD) X-rays are electromagnetic radiation with very short wavelength (  m), very suitable to do diffraction.

Catalysis and Catalysts - XPS X-Ray Electron Spectroscopy (XPS)  Applications: –catalyst composition –chemical nature of active phase –dispersion of active.

Alternative representation of QW Phase accumulation model.

IPCMS-GEMME, BP 43, 23 rue du Loess, Strasbourg Cedex 2

MORPHOLOGY AND STRAIN-INDUCED DEFECT STRUCTURE OF FE/MO(110) ULTRATHIN FILMS: IMPLICATIONS OF STRAIN FOR MAGNETIC NANOSTRUCTURES I. V. Shvets Physics Department.

Alloy Formation at the Co-Al Interface for Thin Co Films Deposited on Al(001) and Al(110) Surfaces at Room Temperature* N.R. Shivaparan, M.A. Teter, and.

Epitaxial Overlayers vs Alloy Formation at Aluminum- Transition Metal Interfaces Richard J. Smith Physics Department Montana State University Bozeman MT.

Alloy Formation at the Epitaxial Interface for Ag Films Deposited on Al(001) and Al(110) Surfaces at Room Temperature* N.R. Shivaparan, M.A. Teter, and.

One-dimensional Ostwald Ripening on Island Growth An-Li Chin ( 秦安立 ) Department of Physics National Chung Cheng University Chia-Yi 621 Taiwan, ROC Prof.

NWAPS-May Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith and V. Shutthanandan* Physics Department,

CMP Seminar MSU 10/18/ What makes Surface Science “surface” science ? R. J. Smith Physics Department, Montana State Univ. Work supported by NSF.

X-ray Photoelectron Spectroscopy —— Application in Phase-switching Device Study Xinyuan Wang A

7th Sino-Korean Symp June Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith Physics Department,

Composition and thickness dependence of secondary electron yield for MCP detector materials Slade J. Jokela, Igor V. Veryovkin, Alexander V. Zinovev, Jeffrey.

Photoemission Fundamentals of Data Acquisition and Analysis J. A. Kelber, June Texts: PHI handbook, Briggs and Seah Outline: I.Photoemission process.

CMP Seminar September 22, Growth and Structure of Thin Fe Films on the Ti-Al Interface C. V. Ramana Montana State University

Grazing Incidence X-ray Scattering from Patterned Nanoscale Dot Arrays D.S. Eastwood, D. Atkinson, B.K. Tanner and T.P.A. Hase Nanoscale Science and Technology.

Metal photocathodes for NCRF electron guns Sonal Mistry Loughborough University Supervisor: Michael Cropper (Loughborough University) Industrial Supervisor:

X-RAY PHOTOELECTRON SPECTROSCOPY (XPS)

Methods in Surface Physics Experimentation in Ultra-High Vacuum Environments Hasan Khan (University of Rochester), Dr. Meng-Fan Luo (National Central University)

PC4259 Chapter 5 Surface Processes in Materials Growth & Processing Homogeneous nucleation: solid (or liquid) clusters nucleated in a supersaturated vapor.

Carrier Mobility and Velocity

.Abstract Field effect gas sensors based on zinc oxide were fabricated. In order to increase gas sensor’s sensitivity to carbon monoxide, Au nanoparticles.

Ion Beam Analysis Dolly Langa Physics Department, University of Pretoria, South Africa Blane Lomberg Physics Department, University of the Western Cape,

Daniel Wamwangi School of Physics

Stanford Synchrotron Radiation Laboratory More Thin Film X-ray Scattering: Polycrystalline Films Mike Toney, SSRL 1.Introduction (real space – reciprocal.

1 K. Overhage, Q. Tao, G. M. Jursich, C. G. Takoudis Advanced Materials Research Laboratory University of Illinois at Chicago.

Recent advances in intercalation compounds physics.

Post Anneal Solid State Regrowth

AlGaN/InGaN Photocathodes D.J. Leopold and J.H. Buckley Washington University St. Louis, Missouri, U.S.A. Large Area Picosecond Photodetector Development.

Fabrication and characterization of Au-Ag alloy thin films resistance random access memory C. C. Kuo 1 and J. C. Huang 1,* 1 Department of Materials and.

Atomic Scale Understanding of the Surface Intermixing during Thin Metal Film Growth 김상필 1,2, 이승철 1, 정용재 2, 이규환 1, 이광렬 1 1 한국과학기술연구원, 계산과학센터 2 한양대학교, 재료공학부.

FRANK LABORTORY OF NEUTRON PHYSICS ION BEAM ANALYSIS

Nanowires and Nanorings at the Atomic Level Midori Kawamura, Neelima Paul, Vasily Cherepanov, and Bert Voigtländer Institut für Schichten und Grenzflächen.

EEW508 Structure of Surfaces Surface structure Rice terrace.

D.-A. Luh, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, S. Harvey, R. E. Kirby, T. Maruyama, and C. Y. Prescott Stanford Linear Accelerator.

Nitrogen-Doped Carbon

EEW508 II. Structure of Surfaces Surface structure Rice terrace.

Epitaxial superconducting refractory metals for quantum computing

Compositional dependence of damage buildup in Ar-ion bombarded AlGaN K. Pągowska 1, R. Ratajczak 1, A. Stonert 1, L. Nowicki 1 and A. Turos 1,2 1 Soltan.

The International Conference On Metallurgical Coatings And Thin Films ICMCTF 2005 CMSELCMSEL Hanyang Univ. Co/CoAl/Co Trilayer Fabrication Using Spontaneous.

Center for Materials for Information Technology an NSF Materials Science and Engineering Center Substrate Preparation Techniques Lecture 7 G.J. Mankey.

Control of Carbon Nanotube Nucleation Rate with a Hydrogen Beam Plasma Paolo Santos 1, Dorothée Alsentzer 3, Thomas B. Clegg 2,3, Sergio Lemaitre 2,3,

Page 1 Phys Baski Diffraction Techniques Topic #7: Diffraction Techniques Introductory Material –Wave-like nature of electrons, diffraction/interference.

In-situ Scanning Tunneling Microscopy Study of Bismuth Electrodeposition on Au(100) and Au(111) S.H. Zheng a, C.A. Jeffrey a,b, D.A. Harrington b E. Bohannan.

Frank Batten College of Engineering & Technology Old Dominion University: Pulsed Laser Deposition of Niobium Nitride Thin Films APPLIED.

The Structure and Dynamics of Solids

Ion Beam Analysis of the Composition and Structure of Thin Films

High Resolution Depth Profiling of Ti Oxidation

The composition and structure of Pd-Au surfaces Journal of Physical Chemistry B, 2005, 109, C. W. Yi, K. Luo, T. Wei, and D. W. Goodman Bimetallic.

Lecture 17: Diffusion PHYS 430/603 material Laszlo Takacs UMBC Department of Physics.

Organic Electronics and the Magnetoresistive Effect  Zachary Kilboy & Peter Zernia  Dr. James Rybicki  Physics & Astronomy Organic Electronics and the.

© 1997, Angus Rockett Section I Evaporation.

MBE Growth of Graded Structures for Polarized Electron Emitters

Study of vacuum stability at cryogenic temperature

SYNTHESIS AND CHARACTERIZATION OF SILICA THIN FILMS

Structural Quantum Size Effects in Pb/Si(111)

Criteria of Atomic Intermixing during Thin Film Growth

2005 열역학 심포지엄 Experimental Evidence for Asymmetric Interfacial Mixing of Co-Al system 김상필1,2, 이승철1, 이광렬1, 정용재2 1. 한국과학기술연구원 미래기술연구본부 2. 한양대학교 세라믹공학과 박재영,

Growth Behavior of Co on Al(001) substrate

Co-Al 시스템의 비대칭적 혼합거동에 관한 이론 및 실험적 고찰

Sang-Pil Kim and Kwang-Ryeol Lee Computational Science Center

Presentation transcript:

Applications of MeV Ion Channeling and Backscattering to the Study of Metal/Metal Epitaxial Growth Richard J. Smith Physics Department Montana State University Bozeman MT 59715

MSU Colloquium 10/5/012 Outline: ä Overview of program and techniques ä Ti/Al(100) epitaxial fcc overlayer ä Ag/Al(100) epitaxial alloyed overlayer ä Ni/Al(110) disordered alloy formation

MSU Colloquium 10/5/013 Acknowledgements ä Ph.D students: Adli Saleh,V. Shuthanandan, N. Shivaparan N. Shivaparan ä Dr. Yong-wook Kim (from ASSRC) ä National Science Foundation ä

MSU Colloquium 10/5/014 Metal-metal Interface Structure ä Understand overlayer growth and alloy formation ä Chemical composition and structure of the interface ä Applications: magnetoresistive devices, spin electronics ä Surface energy (broken bonds) ä Chemical formation energy ä Strain energy A B interface

MSU Colloquium 10/5/015 Metal-metal systems studied... ä Substrates: Al(111), Al(100), Al(110) ä Metal overlayers studied so far: ä Fe, Ni, Co, Pd ä Ti, Ag, Zr ä All have surface energy > Al surface energy ä All form Al compounds with  H form < 0 ä Use resistively heated wires ( ~ML/min) ä Deposit on substrate at room temperature (atomic size smaller than Al) (atomic size smaller than Al) (atomic size larger than Al)

MSU Colloquium 10/5/016 MSU Ion Beam Laboratory

MSU Colloquium 10/5/017 2 MV van de Graaff Accelerator

MSU Colloquium 10/5/019 Scattering chamber ä High precision sample goniometer ä Hemispherical VSW analyzer (XPS, ISS) ä Ion and x-ray sources ä LEED ä Metal wires for film deposition

MSU Colloquium 10/5/0110 Overview of High Energy Ion Scattering (HEIS) ä MeV He + ions ä Yield = Q   (Nt) ä Ni peak for coverage ä Al peak for structure

MSU Colloquium 10/5/0111 Angular Yield (Channeling dip) ä 1 MeV He + ä Al bulk yield ä Ag surface peak ä  inc = 0 o ä  det = 105 o ä ~10 15 ions/cm 2 ä  min = 3.6%

MSU Colloquium 10/5/ Ti on Al(100) surface peaks ä Surface peaks (SP) ä Decrease in Al SP area ä Ti shadows Al atoms ä FCC

MSU Colloquium 10/5/0113 HEIS: Al surface peak area vs. Ti coverage ä Decrease in Al SP (o) to 5.5 ML ä Simulation () for flat Ti layer in FCC Al sites ä Critical thickness of 5 ML ~ 4.4% lattice mismatch ä Increase > 5 ML Ti layer relaxation

MSU Colloquium 10/5/0114 Ti on Al(100): XPD angular scans ä Enhanced Al 2p emission at 0 o, 45 o ä Forward scattering for FCC lattice ä Ti 2p photopeaks show enhanced emission along same directions ä FCC Ti film !

MSU Colloquium 10/5/0115 Ti on Al(001): HEIS Channeling ä Channeling along (101) shows outward relaxation for Ti layer ä a  = 2.07 Å HEIS ä a  = 2.12Å XPD ä FCC Ti was also confirmed by LEED IV analysis

MSU Colloquium 10/5/0116 Interstitial substitution T > 300 o C ä Fcc Ti is stable for T  300 o C ä At 400 o C Ti diffuses to depth ~ 300Å ä In channeling direction see Ti shadowing 300 o C 400 o C

MSU Colloquium 10/5/0117 Interstitial substitution T = 400 o C ä Channeling normal to (110) surface ä Plot Ti SP area and bulk Al yield ä Fractional Ti occupation is ~ 93%

MSU Colloquium 10/5/0118 Ti on Al(111): XPD Ti and Al ä Ti and Al emission are clearly different and consistent with the hcp and fcc structures ä Ti grows on Al(111) with hcp structure ä Fcc stacking in Al does not prevent hcp stacking in Ti ä Recent XRD studies on Ti stacking in Ti-Al multilayers still under discussion

MSU Colloquium 10/5/0119 2: Ag on Al(100):Al surface peak ä Ag shadows Al surface atoms ä Shadowing not like that for flat Ag overlayer ä Not Ag islands on FCC lattice ä Small strain at interface(0.9%)

MSU Colloquium 10/5/0120 Ag on Al(100): Ag surface peak ä Ag atoms are shadowed at high coverage ä Well-ordered Ag film ä Confirmed by LEED

MSU Colloquium 10/5/0121 Ag on Al(100) LEED patterns A. Clean B. 0.5 ML C. 2.5 ML D. 3.6 ML E. 30 ML F. 30 ML heated to 250 o C

MSU Colloquium 10/5/0122 Ag on Al(100): Ag binding energy (BE) ä Ag 3d energy decreases gradually ä Ag 4d (VB) also changes ä BE shift is similar to bulk Al-Ag alloys ä Ag moves into Al surface AlAg 2 Al+dilute Ag

MSU Colloquium 10/5/0123 3: Ni on Al(110) Al surface peaks ä Al SP area increases with Ni coverage ä 3 regions with different slopes (2) (0.35) (~0) ä No LEED spots ä Interface alloy forms at room temperature

MSU Colloquium 10/5/0124 Ni on Al(110):XPS chemical shifts ä Shifts in BE ä Shifts in satellite ä Compare with XPS for bulk alloys to identify surface composition NiAl eV Ni 2 Al 0.75eV (8.0 eV) NiAl 0.2 eV (7.2 eV) Ni 3 Al 0.0 eV (6.5 eV) Ni 0.0 eV (5.8 eV)

MSU Colloquium 10/5/0125 Snapshots from MC simulations Al(110)+0.5 ML Ni Clean Al(110) Al(110)+2.0 ML Ni ä MC (total energy) using EAM potentials for Ni, Al (Voter) ä Equilibrate then add Ni in 0.5 ML increments (solid circles) ä Ion scattering simulations (VEGAS)

MSU Colloquium 10/5/0126 Ni on Al(110):HEIS simulations using the snapshots ä Measured (o) Simulation (  ) ä Slopes agree ä Change at 2 ML correct ä Use snapshots for insight ä Ni atoms move below the surface

MSU Colloquium 10/5/0127 Conclusions: ä Combined HEIS, XPS, LEED to study film structures on solid-solid interfaces ä Ti/Al(100) epitaxial fcc overlayer up to 5 ML ä Ag/Al(100) epitaxial overlayer with some alloying of Al into the Ag overlayer ä Ni/Al(110) disordered alloy formation for deposition at room temperature

MSU Colloquium 10/5/0128 Techniques used... ä High-energy ion scattering and channeling (HEIS) ä X-ray photoemission - intensities and chemical shifts in binding energy (XPS) shifts in binding energy (XPS) ä X-ray photoelectron diffraction (XPD) ä Low-energy electron diffraction (LEED) ä Low-energy ion scattering (LEIS)

MSU Colloquium 10/5/0129 Ti on Al(100): XPS intensity vs Ti coverage ä Attenuation follows flat film model (solid line) after 2 ML ä No decrease of intensity for first monolayer ä Possible Ti-Al interchange at top layer

MSU Colloquium 10/5/0130 Ti on Al(110): HEIS Al surface peak vs Ti coverage ä Shadowing of Al atoms by Ti same as for Al(001) ä Critical thickness at ~5 ML ä Simulation (  ) for flat Ti layer in FCC Al sites ä Film relaxes for coverage > 5 ML

MSU Colloquium 10/5/0131 Ti on Al(111): HEIS/Channeling ä Channeling dips at normal incidence ä Ti is shadowed so have ordered film on Al surface ä Ti and Al axes are aligned normal to surface

MSU Colloquium 10/5/0132 Ti on Al(111): HEIS Al SP vs Ti coverage ä Al SP area initially decreases ä Ti shadows Al atoms ä After 2 ML the Al SP increases as if Al is disordered or alloyed ä XPD, LEED, ISS, XPS indicate ordered Ti film on ordered Al ä Dechanneling ?

MSU Colloquium 10/5/0133 Angular Yield (Channeling dip) ä 1 MeV He + ä Al bulk yield ä Ag surface peak ä  inc = 0 o ä  det = 105 o ä ~10 15 ions/cm 2 ä  min = 3.6%

MSU Colloquium 10/5/0134 Ag on Al(100): XPS intensities ä Rapid decrease of Al peak ä Rapid growth of Ag peak ä Growth of Ag islands for high coverage ä Flat film grows at first but not pure Ag