The Ideal Electron Gas Thermometer

Slides:



Advertisements
Similar presentations
SPICE-modelling and the analysis of the self-excited push-pull dc-dc converter with selfheating taken into account Krzysztof Górecki and Janusz Zarębski.
Advertisements

Diodes and diode equation
1 High order moments of shot noise in mesoscopic systems Michael Reznikov, Technion Experiment: G. Gershon, Y. Bomze, D. Shovkun Theory: E. Sukhorukov.
Transistors Fundamentals Common-Emitter Amplifier What transistors do
Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.
AOSC 634 Air Sampling and Analysis Lecture 1 Measurement Theory Performance Characteristics of instruments Nomenclature and static response Copyright Brock.
Ideal Diode Equation.
Reverse biased PN junction p n p n Reverse biased PN junction energy diagram.
Applications Team Sensing Products
The method of a fast electrothermal transient analysis of a buck converter Krzysztof Górecki and Janusz Zarębski Department of Marine Electronics Gdynia.
Heat conduction by photons through superconducting leads W.Guichard Université Joseph Fourier and Institut Neel, Grenoble, France M. Meschke, and J.P.
Characterisation and Reliability testing of THz Schottky diodes. By Chris Price Supervisor: Dr Byron Alderman December 2006 Preliminary.
Electrical Noise Wang C. Ng.
Dark Current Measurements of a Submillimeter Photon Detector John Teufel Department of Physics Yale University Yale: Minghao Shen Andrew Szymkowiak Konrad.
Danielle Boddy Durham University – Atomic & Molecular Physics group Laser locking to hot atoms.
Operational Amplifier
Julien Gabelli Bertrand Reulet Non-Gaussian Shot Noise in a Tunnel Junction in the Quantum Regime Laboratoire de Physique des Solides Bât. 510, Université.
The Shot Noise Thermometer
An Electronic Primary Thermometer Based on Thermal Shot Noise
Metrology: The fabric of science and technology Lafe Spietz TMA class of 1990.
Department of Information Engineering286 Transistor 3-layers device –npn (more common) –pnp (less common) N P N e b c P N P e b c.
The Ideal Electron Gas Thermometer Lafe Spietz, K.W. Lehnert, I. Siddiqi, R.J. Schoelkopf Department of Applied Physics, Yale University Thanks to: Michel.
An Electronic Primary Thermometer Based on Thermal Shot Noise Lafe Spietz K.W. Lehnert, R.J. Schoelkopf Department Of Applied Physics, Yale University.
The Shot Noise Thermometer Lafe Spietz, K.W. Lehnert, I. Siddiqi, R.J. Schoelkopf Department of Applied Physics, Yale University Thanks to: Michel Devoret,
Advanced Analog Circuits Seth Price Department of Chemical Engineering New Mexico Tech Rev. 1/26/15.
DC-DC Fundamentals 1.1 An Introduction
Engineering 80 – Spring 2015 Temperature Measurements
Ideal Diode Equation. Important Points of This Lecture There are several different techniques that can be used to determine the diode voltage and current.
POWER AMPLIFIER CHAPTER 4.
Content Op-amp Application Introduction Inverting Amplifier
Electronic Circuits Laboratory EE462G Lab #8 BJT Common Emitter Amplifier.
Operational Amplifiers David Lomax Azeem Meruani Gautam Jadhav.
Chapter 8 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.
3/26/2003BAE of 10 Application of photodiodes A brief overview.
Understanding ADC Specifications September Definition of Terms 000 Analogue Input Voltage Digital Output Code FS1/2.
SPEC, CEA Saclay (France),
Carbon Nanotube Intramolecular Junctions. Nanotubes A graphene sheet with a hexagonal lattice…
Lumped versus Distributed: A component must be considered as distributed when the physical dimensions of an element become significant with respect to.
By Francesco Maddalena 500 nm. 1. Introduction To uphold Moore’s Law in the future a new generation of devices that fully operate in the “quantum realm”
Ultrasensitive Graphene THz Photon Detectors D. Prober, Yale Univ. Depts. Applied Physics and Physics with thanks for collaborators and Yale colleagues.
Ya Bao, South Bank University 1 Noise Richard Read, The Essence of Communications Theory, Chapter 3.
Radio-frequency single-electron transistor (RF-SET) as a fast charge and position sensor 11/01/2005.
Unit 8 Operational Amplifier. Objectives: Ideal versus practical operational amplifier Performance parameters Some applications –Peak detector –Absolute.
Advances in rf Contactless Measurements in Pulsed Magnetic Field. Moaz Altarawneh FSU, NHMFL, LANL. Moaz Altarawneh FSU, NHMFL, LANL. Chuck Mielke LANL.
BASIC SEMICONDUCTOR ELECTRONIC CIRCUITS Introduction of two basic electronic elements: diode and transistor LEARNING GOALS Diodes structure and four modeling.
Norhayati Soin 06 KEEE 4426 WEEK 3/2 20/01/2006 KEEE 4426 VLSI WEEK 4 CHAPTER 1 MOS Capacitors (PART 3) CHAPTER MOS Capacitance.
Gravitational Experiment Below 1 Millimeter and Search for Compact Extra Dimensions Josh Long, Allison Churnside, John C. Price Department of Physics,
Measurement of the Charge of an Electron Presented by John Cole Experiment Conducted by John Cole, Sarmadi Almecki, and Pirouz Shamszad.
19 March 2009Thomas Mueller - Workshop AAP09 1 Spectral modeling of reactor antineutrino Thomas Mueller – CEA Saclay Irfu/SPhN.
Measuring Quantum Coherence in the Cooper-Pair Box
Nikolai Kopnin Theory Group Dynamics of Superfluid 3 He and Superconductors.
CHAPTER 20 OPERATIONAL AMPLIFIERS (OP-AMPS). Introduction to operational amplifiers Symbol and Terminals.
Engineering 80 – Spring 2016 Temperature Measurements 1 SOURCE: 3_standardbody__to-226_straightlead.jpg SOURCE:
Instantaneous Power (Anlık Güç) Instantaneous power for a 2-terminal element: Instantaneous power for an (n+1)-terminal or n-port element: Total instantaneous.
Thermal Strain Effects in Germanium Thin Films on Silicon Travis Willett-Gies Nalin Fernando Stefan Zollner.
Diode Circuit Analysis
What is thermal noise? Thermal noise in the resistance of the signal source is the fundamental limit on achievable signal sensitivity is unavoidable, and.
Resistance & Nonlinearity of Diode
FEEDBACK CIRCUITS CLASSIFICATION OF AMPLIFIER CONCEPT OF FEEDBACK
Electronic Devices Ninth Edition Floyd Chapter 13.
Dept. of ECE, Univ. of Houston
Diodes Introduction Textbook CD
After-pulsing and cross-talk comparison for PM1125NS-SB0 (KETEK), S C (HAMAMATSU) and S CS (HAMAMATSU). Oleynikov V.P.*, Porosev V.V.
EC16403 ELECTRONIC CIRCUITS II
Tunnel field-effect transistor
Inverse Square Sensitivity
ECE 3336 Introduction to Circuits & Electronics
Chapter 5: Active Filters
The Junction Diode Junction Diodes:
The Junction Diode Junction Diodes:
Presentation transcript:

The Ideal Electron Gas Thermometer R.J. Schoelkopf, Lafe Spietz, K.W. Lehnert, I. Siddiqi Department of Applied Physics, Yale University Thanks to: Michel Devoret and Daniel E. Prober

Introduction Johnson-Schottky transition of the noise in tunnel junctions Relates T and V using only e and kB  primary thermometer Demonstrate operation from T=0.02 K to 300 K

Fundamental Noise Sources Thermal(Johnson) Noise Frequency-independent Temperature-dependent Used for thermometry Shot(Schottky) Noise Frequency-independent Temperature independent

Conduction in Tunnel Junctions M I M Difference gives current: Fermi functions Assume: Tunneling amplitudes and D.O.S. independent of energy Fermi distribution of electrons Conductance (G) is constant

Thermal-Shot Noise of a Tunnel Junction* Sum gives noise: *D. Rogovin and D.J. Scalpino, Ann Phys. 86,1 (1974)

Thermal-Shot Noise of a Tunnel Junction 2eGV=2eI Shot Noise Johnson-Schottky Transition Region eV~kBT 4kBT Thermal Noise R

Johnson-Schottky Transition: Direct relationship between T and V

Tunnel Junction (AFM image) R=33 W Area=10 mm2 Al-Al2O3-Al Junction V+ I+ I- V-

Experimental Setup:RF + DC Measurement

Experimental Setup:RF + DC Measurement and Thermometry RhFe Thermometer capacitors device RuOx Thermometer inductors

Experimental Setup: Pumped He Cryostat Noise power vs. bias voltage: High bandwidth: hence fast For t = 1 second,

Self-Calibration Technique for Thermometry Subtract offsets P = Gain*B( SIAmp+SI(V,T) )

Self-Calibration Technique for Thermometry Slope = 2eGB/R -GB(4kBT/R)

Noise Versus Voltage

Universal Functional Form: Agreement over four decades In temperature

Comparison With Secondary Thermometers

Temperature Measurements Over Time

Uncertainty vs. Integration Time

Fit With Two Parameters Residuals

Fit With Three Parameters Residuals

Correlations of Fit Parameters

Merits Vs. Systematics Merits Systematics I-V curve nonlinearities Amplifier and diode nonlinearities Frequency dependence* Self-heating Fast and self-calibrating Primary Wide T range (mK to room temperature) No B-dependence Compact electronic sensor Possibility to relate T to frequency!* *R. J. Schoelkopf et al., Phys Rev. Lett. 80, 2437 (1998)

Summary Ideal Electron Gas Thermometer based on Johnson-Schottky transition of noise in a tunnel junction (thermal-shot noise.) Fast, accurate, primary thermometer Works over a wide temperature range Relates T to V using only e and kb applications for metrology

Tien-Gordon Theory Tucker and Feldman, 1985

Tien-Gordon for Noise of Junction

Diode Nonlinearity Vdiode = GP + bG2P2 b= -3.1 V-1 1mV => 3x10-3 fractional error

Conductance R=31.22Ohms

More Conductance

2 3 1 4