DPG 2001 Frank Hartmann (IEKP) P-irradiated-oxygenated Non-irradiated-oxygenated Non-irradiated-non-oxygenated P-irradiated-non-oxygenated sensors put in a PSI testbeam in very short time A „Cross-Alps“ CMS collaboration of Bari, Karlsruhe, Padova, Perugia and Wien Silizium- Mikrostreifen-Detektoren nach 10 Jahren LHC für CMS Goal: Test complete CMS like Quality assurance Ensure sensor functionality after 10 LHC years

DPG 2001 Frank Hartmann (IEKP) Blue  double layers Red  single layers Low resistivity to postpone type inversion  lower Vdep after 10 LHC years New all-silicon design: 10 barrel layers 2 inner barrel disk 9 forward disks CMS Tracker Design & Layout (1)

DPG 2001 Frank Hartmann (IEKP) CMS Tracker Design & Layout (2) Use instead of standard silicon  less dangling bonds  less surface damage  ~no increase of interstrip capacitance  after irradiation  no increase in noise For small width over pitch ratio (0.25) implement metal overhang on strip to avoid breakdown (field reaches through SiO2)  more stable detector with respect to bias voltage up to 500V

DPG 2001 Frank Hartmann (IEKP) P-Irradiation at Karlsruhe This time: 34MeV protons. (10 LHC years) Sensors cooled down to –10°C during irrad. (CMS like operation) Future CMS QA Karlsruhe Kompaktzyklotron

DPG 2001 Frank Hartmann (IEKP) 165V 350V At 21°C Tests in the lab (1) IV CV

DPG 2001 Frank Hartmann (IEKP) 101pF ~Same as before 1.7M  ~Same as before 3.2pF (one neighbour) ~Same as before nA before at 21°C Tests in the lab (2) ~450nA

DPG 2001 Frank Hartmann (IEKP) One double-sensor module 1 module with: 2 oxygenated sensors APV25S1 prototype hybrid prototype repeater In the cool-box-frame

DPG 2001 Frank Hartmann (IEKP) Assembly at the PSI Beam Bias voltage supply Cool-box Electronics

DPG 2001 Frank Hartmann (IEKP) PSI test Dec 2000

DPG 2001 Frank Hartmann (IEKP) Noise Preliminary

DPG 2001 Frank Hartmann (IEKP) Signal / Noise Preliminary

DPG 2001 Frank Hartmann (IEKP) Strip configuration Sensors gallery CSEM Ba1 pitch 61  m implant 12.3  m metal 11  m Micron oxy (KA,PD,PG) Pd 26 pitch 61  m implant 6.5  m metal 17.2  m Micron standard Pd 25 pitch 61  m implant 10  m metal 10  m CSEM Ba2 pitch 61  m implant 12.6  m metal 12.6  m

DPG 2001 Frank Hartmann (IEKP) Noise vs. Capacitive load ENC [e] = / [pF] 600e “readout noise” (bandwidth limitation) Good agreement with data C=15pF

DPG 2001 Frank Hartmann (IEKP) Conclusion S/N of with final readout chip and 16 for a full irradiated module looks very promising. S/N differences are more related to CC and Cint values depending on strip width rather than from ox or nox. Sensor parameters like breakdown voltages, leakage currents and strip parameters after irradiation are well within CMS specification.  CMS specifies sensor behavior (parameters) after irradiation and not the oxygen content!!!

DPG 2001 Frank Hartmann (IEKP)

DPG 2001 Frank Hartmann (IEKP) Signal

DPG 2001 Frank Hartmann (IEKP) The cool-box from Wien Test performed at –10°C with N 2 flushing and Peltier cooling

DPG 2001 Frank Hartmann (IEKP) The bunker & FAST professional cabeling

DPG 2001 Frank Hartmann (IEKP) Signal / Noise Preliminary

DPG 2001 Frank Hartmann (IEKP) Electrical parameters DetectorSensors Vdep* (nirr) Ileak*(nirr) (uA) Vbkd Rbias(M  ) Cint(pF)Ccoupl(pF)Vdep(irr)Ileak(irr)Vbd(irr) PD PG BA1Csem Csem PD KA (*) (1.7 irrad) BA2