O Initial CZ wafer.

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Presentation transcript:

O Initial CZ wafer

High temperature annealing O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O High temperature annealing

High temperature annealing O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 denuded zone O High temperature annealing

Nucleation at low temperature denuded zone O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O Nucleation at low temperature

Distribution of nuclei sizes denuded zone Distribution of nuclei sizes

Precipitate growth at moderate temperature denuded zone Precipitate growth at moderate temperature

Growth of crystal defects (dislocations) denuded zone Growth of crystal defects (dislocations)

Rapid diffusion of metal contamination denuded zone Rapid diffusion of metal contamination

M denuded zone M M M M M M Gettering

Release of contaminants due to late high temperature anneal denuded zone O M M M M M M M Release of contaminants due to late high temperature anneal

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