Properties of Suspended ZnO Nanowire Field-Effect Transistor

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Presentation transcript:

Properties of Suspended ZnO Nanowire Field-Effect Transistor Scott Cromar Mentor: Jia Grace Lu University of California, Irvine 31 August 2006

ZnO Nanowires (NWs) Advantages Objectives Wide & direct bandgap semiconductor (Eg=3.35 eV) Field effect transistors (FETs) Gas & chemical sensing Optoelectronics & Micro-lasers NW Synthesis Suspended ZnO NW FET fabrication Electrical contact improvement techniques Sensing experiment results Next step Fan, Z.; Lu, J.G. "Zinc Oxide Nanostructures: Synthesis and Properties." Journal of Nanoscience and Nanotechnology 5 (2005): 1561-1573.

Vapor Trapping Chemical Vapor Deposition (CVD) Nanowire Synthesis Vapor Trapping Chemical Vapor Deposition (CVD) O2 O2 Au catalyst ZnO nanowire Catalyst Zn Au Catalyst 700 °C Absorbs Zn Vapor Au-Zn Alloy Supersaturation Nucleation 1D Crystal Structure ZnO Nanowire Chang, P.-C.; Fan, Z.; Wang, D.; Tseng, W.-T.; Chiou, W. -A.; Hong, J.; Lu, J. G. “ZnO nanowires synthesized by vapor trapping CVD method.” Chem. Mater. 16 (2004): 5133-5137

Nanowire Synthesis Diameter = 30-100 nm O2 Gas Flow Furnace Zn Vapor Zn Powder Si Chip Quartz Vial Quartz Tube

Nanowire Synthesis

ZnO NW FET Fabrication Sonicate NW chip in isopropanol Drop solution on pattern, Ti/Au contact Search for device w/ optical microscope

ZnO NW FET Fabrication Nanowire (Channel) Source Drain Ti/Au SiO2 Vds Vg Vds Gate Ti/Au SiO2 P++Si

ZnO NW FET Fabrication

Improve Contact Annealing Metal deposition w/ Focused Ion Beam 300 - 700 °C, 30 min. Metal deposition w/ Focused Ion Beam

Gas Sensing NWs have high surface-volume ratio Suspended NW have more surface area than nonsuspended Gas molecules on metal-oxide surface alter the electronic properties by chemisorption Depletion Region Source Drain Gate NW Channel Fan, Z.; Lu, J. G. “Chemical sensing with ZnO nanowire field-effect transistor.” IEEE Transactions on Nanotechnology 5 (2006): 393-396.

Gas Sensing Results Sensitivity: Nonsuspended: 90% Suspended: 10% I-Vds curve for various concentrations of NO2 Conductance of NW exposed to 1000 ppm CO2 Ggas = Transconductance on gas exposure G0 = Trasconductance in inert environment

Next Step Further investigate the intrinsic properties of suspended ZnO NWs More gas sensing Gating characteristics Mechanical & electrical properties w/ SPM Identify device applications

Acknowledgements Professor Jia Grace Lu CJ Chien Joseph Fan IM-SURE staff Carl Zeiss Inc. (SEM use) Funding through NSF

Surface Potential Results Scanning Probe Microscopy (SPM) Scanning Surface Potential Microscopy (SSPM) F = electrostatic force dC/dz = derivative of the tip-sample capacitance Vac = magnitude signal applied tip Vtip – Vsample = potential difference between tip and sample Fan, Z.; Lu, J. G. “Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes.” Applied Physics Letters 86 (2005): 032111.

Surface Potential Results Surface Topology Surface Potential