Properties of Nanodomain Polymer Derived SiCO Dongjoon Ahn University of Colorado at Boulder Department of Mechanical Engineering Advisor: Prof. Rishi Raj

:: MCEN 5208-Introduction to Research 1/4 Background & Objective Problems facing current in the Microelectronics Circuit –Signal Propagation Delay –Cross-talk –Power Consumption The best way to reduce the Limitation –Use low dielectric constant material SiCO as a candidate –Low dielectric constant < 2.0 –Thermal and Mechanical stability at high temp. Find the low dielectric constant material

:: MCEN 5208-Introduction to Research 2/4 Research Tasks Measure the dielectric properties of SiCO thin films –Thickness –Capacitance –Leakage Current Apply the SiCO to actual devices –Low Dielectric Constant –Higher Thermal & Mechanical Stability Future work Current work for introduction to research

:: MCEN 5208-Introduction to Research 3/4 Methodology (Fabrication) Making Precursor Coating & Patternin g Heat Treatment Gold Coating Measurement Cross-linking Densification Pyrolysis Annealing Liquid Precursor Spin-Coating UV Lithography & Polymerization Process Detail Step Check Point Out put Chemical Composition RPM of Spinner Wave Length Interconnection Si/Insulator/metal configuration UV Cured & Patterned Gel Polymer ILD Material on Si wafer Sputtering Temperature Dielectric Constant Measuring Dielectric Property Thickness Capacitance Leakage Current

:: MCEN 5208-Introduction to Research 4/4 Gold SiCO Si Wafer Methodology (Measurement) Apparatus of Measurement Thickness: Optical Ellipsometry (AutoEL ® -II, RUDOLPH RESEARCH) Capacitance & Leakage Current: Impedance Spectroscopy (HP 4192A LF IMPEDANCE ANALYZER) Thickness Measurement (by Optical Ellipsometer)