Investigation of the potential of organic circuits for RFID tags Qintao Zhang and Sha Li
Matthias Handy RFID-Workshop, 30.9./ , Berlin
Organic transistors Organic tags are the only way of under-1-cent RFID tags Cgd0Cgs0
Good and Bad things No standard structures, L=5mm~10nm, W=several 100um~10mm, large overlap capacitance No standard semiconductor materials, Pentacene, P3HT, CuPc No Standard gate dielectric, K=2 to 16 No control of parameters, lots of different Vt reported fabrication limitation: Can’t shrink devices, typical number L=2µm, W=50µm for inkjet printing Flexible fabrication: soluble materials can be printed on all kinds of material Transparent, important for display, may get e-paper, e-poster Good things: Bad things:
AIM-spice Model Good enough Mobility 3cm 2 /V S Supply voltage 40V Channel Length 2µm2µm Contact resistance 7E5 ohm Channel width 50µm
Inverter Complementary Static inverter Organic Inverter CMOS Inverter
Inverter Pseudo-PMOS Depletion Load PMOS
Ring Oscillator Using Complementary inverter Wp/Wn=1/1, Vdd=40V, Freq=394.42KHz,P=490uW Wp/Wn=1/15, Vdd=40V, Freq=70.741KHz, P=81uW Wp/Wn=1/1, Vdd=14.3V, Freq=125.36KHz, P=15.7uW
Ring Oscillator Pseudo-PMOS COMPLEMENTARY (15/1) PSEUDODEPLETION Tp (us)14.136/ Frequency (KHz)70.741/ Power (uW)81.027/ Depletion Load PMOS
NAND and NOR Complementary NAND Complementary NOR
NAND and NOR COMPLEMENTARY NAND COMPLEMENTARY NORRATIO NAND DCVSL Thl (us)2.63/ / Tlh(us)2.01/ / Frequency (KHz)380/ / Power (uW)195/ / DCVSL
Memory Mainly use P-type transistor in the ROM to improve the performance. OR ROM NOR ROM OR ROMNOR ROM Tp (ns) Frequency (MHz) Power (uW)250256
Decoder OR ROMDECODERDECODER+ROM Tp (us) Frequency (KHz) Power (uW) Decoder + OR ROM Decoder W=min Decoder Wp/Wn=2/15
Conclusion Using current organic transistor technology, it is possible to run the RFID at 125KHz. Due to the big size of the device, the power consumption is much bigger than the regular CMOS circuit. This severely reduces the working distance of the organic RFID.