Pressure evolution of localized nitrogen cluster states in GaAsN alloys Paul R. C. Kent and Alex Zunger Solid State Theory Group National Renewable Energy.

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Presentation transcript:

Pressure evolution of localized nitrogen cluster states in GaAsN alloys Paul R. C. Kent and Alex Zunger Solid State Theory Group National Renewable Energy Laboratory U.S. Department of Energy Office of Science Basic Energy Sciences Division of Materials Sciences

Kent and Zunger PRL (2001) Localized-Delocalized Transition in GaAsN

Experimental Pressure & Composition Evolution Courtesy B. Weinstein (Buffalo) ICPS2002, APS2002 Pressure coefficient of CS reduced compared to bulk Disappearance of highest energy CS!

How do the nitrogen CS evolve with pressure and composition?

Computational Modeling of Dilute Alloys Use large supercells (10^3-10^6 atoms) containing many nitrogens Statistically average properties of many random configurations Use VFF for structural relaxation Use Empirical pseudopotential method for wavefunctions Small Supercell Approach Large Supercell Approach Kent and Zunger PRB (2001)

Computational Modeling atom supercells 1. Create nitrogen cluster in dilute alloy 2. Follow localized state with pressure & nitrogen concentration

Isolated nitrogen in bulk GaAs L =Localized D =Delocalized

Nitrogen triplet in Bulk GaAs Localized state remains in gap Low pressure coefficient

Developed alloy Delocalized states at band edges

Developed alloy with triplet Delocalized states at band edges Triplet not within gap or at band edge, as expected Expected

Isosurfaces

Summary

Model Comparison Band anticrossingGood fit of band edge bowing No cluster states (CS) Impurity bandPredicts broadening of localized states Pressure exposes either broad impurity band, or nothing No discrete CS to expose Atomistic modelConduction states overtake discrete CS (This work)Some hybridization at higher pressures Consistent with experiment

Summary In dilute GaAsN Deep (low energy) CS emerge into gap with pressure Shallowest CS can hybridize –Pressure coefficient increased –Do not emerge into gap Kent and Zunger Appl. Phys. Lett (2003)

Anticrossing/repulsion between band edge and localized states drives band gap down Band gap reduction

GaPN Pressure dependence –14 meV/GPa Pressure Energy Bulk GaP

Red Shift of PL vs PLE Majority state absorbs Minority state emits I. A. Buyanova et al. MRS IJNSR 6 2 (2001) - Emission from localized minority states - Absorption to majority states