Planning for Electromagnetic Irradiation Studies of Silicon Strip Sensors at SLAC/SCIPP Viltaliy Fadeyev, Spencer Key *, Donish Khan *, Tom Markiewicz,

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Presentation transcript:

Planning for Electromagnetic Irradiation Studies of Silicon Strip Sensors at SLAC/SCIPP Viltaliy Fadeyev, Spencer Key *, Donish Khan *, Tom Markiewicz, Bruce Schumm ** * Students ** Presenter Initial thoughts; feedback welcome

2 Some notes: Beam Calorimeter is a sizable project, ~2 m 2 of sensors. Sensors are in unusual regime: ~ 1 GRad of e + /e - ; n/cm 2 after several years. There are on-going studies with GaAs, Diamond, Sapphire materials (FCAL report, Nov 2009). We’ll concentrate on mainstream Si technology proven by decades of technical development. There is some evidence that p-type Si may be particularly resilient:

3 Damage coefficients less for p-type for E e- < ~1GeV (two groups); note critical energy in W is ~10 MeV NIELe - Energy 2x MeV 5x MeV 1x MeV 2x MeV G.P. Summers et al., IEEE Trans Nucl Sci 40, 1372 (1993)

4 More notes: Neutron flux does not seem to be a problem for Si (RD50 findings). There are very few e + /e - radiation hardness studies: S. Dittongo et al (2005); n/p-type Si;160 MRad of 900 MeV e - J.M. Rafi et al (2009); n-type Si; 1.7 GRad of 2 MeV e - Our region of interest is 100 MeV – 10 GeV (incidence) and lower (shower max), and 1 GRad

5 e +/ e - ENERGY (GEV) BUT: Most fluence is at shower max, dominated by ~10 MeV e -, e + and . Why might (?) incident energy matter? BeamCal Incident Energy Distribution

6 NIEL (Non-Ionizing Energy Loss) Conventional wisdom: Damage proportional to Non- Ionizing Energy Loss (NIEL) of traversing particle NIEL can be calculated (e.g. G.P. Summers et al., IEEE Trans Nucl Sci 40, 1372 [1993]) At E c Tungsten ~ 10 MeV, NIEL is 80 times worse for protons than electrons and NIEL scaling may break down (even less damage from electrons/psistrons) NIEL rises quickly with decreasing (proton) energy, and fragments would likely be low energy  Might small hadronic fractions dominate damage?

7 Hadronic Processes in EM Showers There seem to be three main processes for generating hadrons in EM showers: Nuclear (“giant dipole”) resonances Resonance at MeV (~E critical ) Photoproduction Threshold seems to be about 200 MeV Nuclear Compton scattering Threshold at about 10 MeV;  resonance at 340 MeV  Flux through silicon sensor should be ~10 MeV e/ , but also must appropriately represent hadronic component

8 Rates (Current) and Energy Basic Idea: Direct electron beam of moderate energy on Tungsten radiator; follow with silicon sensor at shower max For Si, 1 GRad is about 3 x /cm 2, or about 5 mili-Coulomb  Current scale is  A, which points to the 1-5 GeV beam at CBAF (Jefferson Lab, Virginia, USA)

9 e +/ e - ENERGY (GEV) Recall spectrum: most beamcal incident e + e - below photoproduction and nuclear Compton ranges  having all incident flux above these thresholds should be conservative. On the other hand, all incident flux above Giant Dipole Resonance (GDR) in Tungsten  Beam must be at least ~100 MeV to incorporate GDR (  from 60 CO would not generate hadronic component)

10 Irradiation Plan Intend to use existing sensors from ATLAS R&D (made at Micron). Both n- and p- type, Magnetic Czochralski and Oxygenated Float Zone. Plan to assess the bulk damage effects, charge collection efficiency. This will further assess the breakdown on NIEL scaling (x50 at 2 MeV and x4 at 900 MeV) in the energy range of interest. Sensors Sensor + FE ASIC DAQ FPGA with Ethernet

11 Next Steps Need to use EGS/GEANT to design appropriate Tungsten/Silicon geometry to achieve relative uniform 1 cm 2 illumination for “pencil” beam. Need to quantify degree of shower multiplication to determine what 1-5 GeV flux will generate 1 Grad at shower max; will impact feasibility of CBAF run Need to do pre-characterization of a number of different detectors; prepare instrumentation for evaluation of irradiated sensors (mostly in place from ATLAS RD50 studies). CBAF test at end of calendar year?

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