INVESTIGATIONS OF MAGNETICALLY ENHANCED RIE REACTORS WITH ROTATING (NON-UNIFORM) MAGNETIC FIELDS Natalia Yu. Babaeva and Mark J. Kushner University of.

Slides:



Advertisements
Similar presentations
Introduction to Plasma-Surface Interactions Lecture 6 Divertors.
Advertisements

PLASMA ETCHING OF EXTREMELY HIGH ASPECT RATIO FEATURES:
REACTION MECHANISM AND PROFILE EVOLUTION FOR CLEANING AND SEALING POROUS LOW-k DIELECTRICS USING He/H 2 AND Ar/NH 3 PLASMAS Juline Shoeb a) and Mark J.
ION ENERGY DISTRIBUTIONS IN INDUCTIVELY COUPLED PLASMAS HAVING A BIASED BOUNDARY ELECTRODE* Michael D. Logue and Mark J. Kushner Dept. of Electrical Engineering.
CONTROL OF ELECTRON ENERGY DISTRIBUTIONS AND FLUX RATIOS IN PULSED CAPACITIVELY COUPLED PLASMAS* Sang-Heon Song a) and Mark J. Kushner b) a) Department.
CONTROL OF ELECTRON ENERGY DISTRIBUTIONS IN INDUCTIVELY COUPLED PLASMAS USING TANDEM SOURCES* Michael D. Logue (a), Mark J. Kushner (a), Weiye Zhu (b),
1 Introduction to Plasma Immersion Ion Implantation Technologies Emmanuel Wirth.
MODELING OF H 2 PRODUCTION IN Ar/NH 3 MICRODISCHARGES Ramesh A. Arakoni a), Ananth N. Bhoj b), and Mark J. Kushner c) a) Dept. Aerospace Engr, University.
OPTIMIZING THE PERFORMANCE OF PLASMA BASED MICROTHRUSTERS* Ramesh A. Arakoni, a) J. J. Ewing b) and Mark J. Kushner c) a) Dept. Aerospace Engineering University.
NUMERICAL INVESTIGATION OF WAVE EFFECTS IN HIGH-FREQUENCY CAPACITIVELY COUPLED PLASMAS* Yang Yang and Mark J. Kushner Department of Electrical and Computer.
EFFECT OF PRESSURE AND ELECTRODE SEPARATION ON PLASMA UNIFORMITY IN DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA TOOLS * Yang Yang a) and Mark J. Kushner.
SiO 2 ETCH PROPERTY CONTROL USING PULSE POWER IN CAPACITIVELY COUPLED PLASMAS* Sang-Heon Song a) and Mark J. Kushner b) a) Department of Nuclear Engineering.
ISPC 2003 June , 2003 Consequences of Long Term Transients in Large Area High Density Plasma Processing: A 3-Dimensional Computational Investigation*
WAVE AND ELECTROSTATIC COUPLING IN 2-FREQUENCY CAPACITIVELY COUPLED PLASMAS UTILIZING A FULL MAXWELL SOLVER* Yang Yang a) and Mark J. Kushner b) a) Department.
FLUORINATION WITH REMOTE INDUCTIVELY COUPLED PLASMAS SUSTAINED IN Ar/F 2 AND Ar/NF 3 GAS MIXTURES* Sang-Heon Song a) and Mark J. Kushner b) a) Department.
FACTORS AFFECTING THE SEALING EFFICIENCY OF LOW-k DIELECTRIC SURFACE PORES USING SUCCESSIVE He AND Ar/NH 3 PLASMA TREATMENTS Juline Shoeb a) and Mark J.
SiO 2 ETCH RATE AND PROFILE CONTROL USING PULSE POWER IN CAPACITIVELY COUPLED PLASMAS* Sang-Heon Song a) and Mark J. Kushner b) a) Department of Nuclear.
THE WAFER- FOCUS RING GAP*
PLASMA DISCHARGE SIMULATIONS IN WATER WITH PRE-EXISTING BUBBLES AND ELECTRIC FIELD RAREFACTION Wei Tian and Mark J. Kushner University of Michigan, Ann.
WAFER EDGE EFFECTS CONSIDERING ION INERTIA IN CAPACITIVELY COUPLED DISCHARGES* Natalia Yu. Babaeva and Mark J. Kushner Iowa State University Department.
MAGNETICALLY ENHANCED MULTIPLE FREQUENCY CAPACITIVELY COUPLED PLASMAS: DYNAMICS AND STRATEGIES Yang Yang and Mark J. Kushner Iowa State University Department.
EDGE EFFECTS IN REACTIVE ION ETCHING: THE WAFER- FOCUS RING GAP* Natalia Yu. Babaeva and Mark J. Kushner Iowa State University Department of Electrical.
 Poisson’s equation, continuity equations and surface charge are simultaneously solved using a Newton iteration technique.  Electron energy equation.
STREAMER DYNAMICS IN A MEDIA CONTAINING DUST PARTICLES* Natalia Yu. Babaeva and Mark J. Kushner Iowa State University Department of Electrical and Computer.
SURFACE MODIFICATION OF POLYMER PHOTORESISTS TO PROTECT PATTERN TRANSFER IN FLUOROCARBON PLASMA ETCHING* Mingmei Wanga) and Mark J. Kushnerb) a)Iowa State.
LOW-k DIELECTRIC WITH H2/He PLASMA CLEANING
MODELING OF MICRODISCHARGES FOR USE AS MICROTHRUSTERS Ramesh A. Arakoni a), J. J. Ewing b) and Mark J. Kushner c) a) Dept. Aerospace Engineering University.
MODELING OF MICRODISCHARGES FOR USE AS MICROTHRUSTERS Ramesh A. Arakoni a), J. J. Ewing b) and Mark J. Kushner c) a) Dept. Aerospace Engineering University.
Aspect Ratio Dependent Twisting and Mask Effects During Plasma Etching of SiO2 in Fluorocarbon Gas Mixture* Mingmei Wang1 and Mark J. Kushner2 1Iowa State.
5. Simplified Transport Equations We want to derive two fundamental transport properties, diffusion and viscosity. Unable to handle the 13-moment system.
STREAMER INITIATION AND PROPAGATION IN WATER WITH THE ASSISTANCE OF BUBBLES AND ELECTRIC FIELD INITIATED RAREFACTION Wei Tian a) and Mark J. Kushner b)
PLASMA ATOMIC LAYER ETCHING USING CONVENTIONAL PLASMA EQUIPMENT*
OPTIMIZATION OF O 2 ( 1  ) YIELDS IN PULSED RF FLOWING PLASMAS FOR CHEMICAL OXYGEN IODINE LASERS* Natalia Y. Babaeva, Ramesh Arakoni and Mark J. Kushner.
SIMULATION OF POROUS LOW-k DIELECTRIC SEALING BY COMBINED He AND NH 3 PLASMA TREATMENT * Juline Shoeb a) and Mark J. Kushner b) a) Department of Electrical.
VUV PHOTON SOURCE OF A MICROWAVE EXCITED MICROPLASMAS AT LOW PRESSURE*
F.M.H. Cheung School of Physics, University of Sydney, NSW 2006, Australia.
EFFECT OF BIAS VOLTAGE WAVEFORMS ON ION ENERGY DISTRIBUTIONS AND FLUOROCARBON PLASMA ETCH SELECTIVITY* Ankur Agarwal a) and Mark J. Kushner b) a) Department.
PLASMA DYNAMICS OF MICROWAVE EXCITED MICROPLASMAS IN A SUB-MILLIMETER CAVITY* Peng Tian a), Mark Denning b), Mehrnoosh Vahidpour, Randall Urdhal b) and.
TRIGGERING EXCIMER LASERS BY PHOTOIONIZATION FROM A CORONA DISCHARGE* Zhongmin Xiong and Mark J. Kushner University of Michigan Ann Arbor, MI USA.
Yiting Zhangb, Mark Denninga, Randall S. Urdahla and Mark J. Kushnerb
Why plasma processing? (1) UCLA Accurate etching of fine features.
SPACE AND PHASE RESOLVED MODELING OF ION ENERGY ANGULAR DISTRIBUTIONS FROM THE BULK PLASMA TO THE WAFER IN DUAL FREQUENCY CAPACITIVELY COUPLED PLASMAS*
SiO2 ETCH PROPERTIES AND ION ENERGY DISTRIBUTION IN PULSED CAPACITIVELY COUPLED PLASMAS SUSTAINED IN Ar/CF4/O2* Sang-Heon Songa) and Mark J. Kushnerb)
ATMOSPHERIC PRESSURE PLASMA TRANSFER OF JETS AND BULLETS ACROSS DIELECTRIC TUBES AND CHANNELS* Zhongmin Xiong (a), Eric Robert (b), Vanessa Sarron (b)
FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,
EXCITATION OF O 2 ( 1 Δ) IN PULSED RADIO FREQUENCY FLOWING PLASMAS FOR CHEMICAL IODINE LASERS Natalia Babaeva, Ramesh Arakoni and Mark J. Kushner Iowa.
DEVELOPMENT OF ION ENERGY ANGULAR DISTRIBUTION THROUGH THE PRE-SHEATH AND SHEATH IN DUAL-FREQUENCY CAPACITIVELY COUPLED PLASMAS* Yiting Zhanga, Nathaniel.
CONTROL OF ELECTRON ENERGY DISTRIBUTIONS THROUGH INTERACTION OF ELECTRON BEAMS AND THE BULK IN CAPACITIVELY COUPLED PLASMAS* Sang-Heon Song a) and Mark.
DRY ETCHING OF Si 3 N 4 USING REMOTE PLASMA SOURCES SUSTAINED IN NF 3 MIXTURES* Shuo Huang and Mark J. Kushner Department of Electrical Engineering and.
of magnetized discharge plasmas: fluid electrons + particle ions
PROPERTIES OF UNIPOLAR DC-PULSED MICROPLASMA ARRAYS AT INTERMEDIATE PRESSURES* Peng Tian a), Chenhui Qu a) and Mark J. Kushner a) a) University of Michigan,
Consequences of Implanting and Surface Mixing During Si and SiO 2 Plasma Etching* Mingmei Wang 1 and Mark J. Kushner 2 1 Iowa State University, Ames, IA.
Section 5: Thin Film Deposition part 1 : sputtering and evaporation
HIGH FREQUENCY CAPACITIVELY COUPLED PLASMAS: IMPLICIT ELECTRON MOMENTUM TRANSPORT WITH A FULL-WAVE MAXWELL SOLVER* Yang Yang a) and Mark J. Kushner b)
Chenhui Qu, Peng Tian and Mark J. Kushner
University of Michigan, Ann Arbor, MI, 48109, USA
Yiting Zhang and Mark J. Kushner
DEVELOPMENT OF ION ENERGY DISTRIBUTIONS THROUGH THE PRE-SHEATH AND SHEATH IN DUAL-FREQUENCY CAPACITIVELY COUPLED PLASMAS* Yiting Zhanga, Nathaniel Mooreb,
SUPPRESSING NONLINEARLY-DRIVEN INHOMOGENEITIES IN HIGH FREQUENCY CCP’s
DEVELOPMENT OF ION ENERGY DISTRIBUTIONS THROUGH THE PRE-SHEATH AND SHEATH IN DUAL-FREQUENCY CAPACITIVELY COUPLED PLASMAS* Yiting Zhanga, Nathaniel Mooreb,
Sang-Heon Songa) and Mark J. Kushnerb)
ENGINEERING THE FOCUS RING*
PLASMA PROPAGATION THROUGH POROUS BONE SCAFFOLDING*
Amanda M. Lietz, Seth A. Norberg, and Mark J. Kushner
Flux and Energy of Reactive Species Arriving at the Etch Front in High Aspect Ratio Features During Plasma Etching of SiO2 in Ar/CF4/CHF3 Mixtures* Soheila.
Chenhui Qua), Steven Lanhama), Peng Tiana),
CONTROL OF ION ACTIVATION ENERGY TO SURFACES IN ATMO-
ION ENERGY DISTRIBUTIONS TO PARTICLES IN CORONA DISCHARGES
BREAKDOWN CHARACTERISTICS
Presentation transcript:

INVESTIGATIONS OF MAGNETICALLY ENHANCED RIE REACTORS WITH ROTATING (NON-UNIFORM) MAGNETIC FIELDS Natalia Yu. Babaeva and Mark J. Kushner University of Michigan Department of Electrical Engineering and Computer Science Ann Arbor, MI st Annual Gaseous Electronics Conference Dallas, Texas October 13–17, 2008 GEC08_MERIE

AGENDA  Introduction to Magnetically Enhanced Reactive Ion Etching (MERIE) reactors.  Description of Model  Uniform and tilted magnetic field  Uniform and graded solenoids  Concluding Remarks  Acknowledgement: Semiconductor Research Corp., Applied Materials Inc., Tokyo Electron, Ltd. GEC08_MERIE University of Michigan Institute for Plasma Science and Engineering

MERIE PLASMA SOURCES  Magnetically Enhanced Reactive Ion Etching plasma sources use transverse static magnetic fields in capacitively coupled discharges for confinement to increase plasma density.  The B-field is usually non-uniform across the wafer. Rotating the field averages out non-uniformities in plasma properties.  D. Cheng et al, US Patent 4,842,683  M. Buie et al, JVST A 16, 1464 (1998) University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

CONSEQUENCES OF NON-UNIFORM B-FIELD  What are the consequences on plasma properties (uniformity, ion energy and angular distributions) resulting from “side-to- side” variations in B-field?  This is a 3-d problem…Our computational investigation is performed with a 2-dimensional model in Cartesian coordinates.  Enables assessment of side-to-side variations.  Does not capture closed paths that might occur in 3-d cylindrical coordinates.  Restrict investigation to pure argon to isolate plasma effects. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

MODELING OF MERIE  2-dimensional Hybrid Model  Electron energy equation for bulk electrons  Continuity, Momentum and Energy (temperature) equations for all neutral and ion species.  Poisson equation for electrostatic potential  Circuit model for bias  Tensor transport coefficients.  Monte Carlo Simulation  Secondary electrons from biased surfaces  Ion transport to surfaces to obtain IEADs University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

ELECTRON ENERGY TRANSPORT S(T e )=Power deposition from electric fields L(T e ) =Electron power loss due to collisions  =Electron flux  (T e )=Electron thermal conductivity tensor S EB =Power source source from beam electrons  All transport coefficients are tensors in time domain: University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

 Poisson’s equation is solved using a semi-Implicit technique where charge densities are predicted at future times.  Predictor-corrector methods are used where fluxes at future times are approximated using past histories or Jacobian elements. IMPROVEMENTS FOR LARGE MAGNETIC FIELDS University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

REVIEW: MERIE REACTOR RADIALLY SYMMETRY  2-D, Cylindrically Symmetric  Magnetic field is purely radial, an approximation validated by 2-D Cartesian comparisons. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

Ar + DENSITY vs MAGNETIC FIELD  Increasing B-field shifts plasma towards center and increases density.  Decreasing Larmor radius localizes sheath heating closer to wafer.  Plasma is localized closer to wafer.  Large B-fields (> 100 G) decrease density due to diffusion losses of Ar*  Ar, 40 mTorr, 100W, 10 MHz University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

SHEATH REVERSAL, THICKENING, IEDs  As the magnetic field increases, the electrons become less mobile than ions.  Electric field in the sheath reverses, sheath thickens, IEDs lower in energy and broaden. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

“SIDE-TO-SIDE” MERIE WITH SOLENOID COILS  2-d Cartesian Geometry University of Michigan Institute for Plasma Science and Engineering  Actual Aspect Ratio GEC08_MERIE

Ar + vs UNIFORM B-FIELD ANGLE  Ar, 40 mTorr, 100 W, 10 MHz  Uniform but tilted B- field.  Low cross field mobility increases plasma density and plasma stretches along field lines.  Tilt of B-field increases maximum density while plasma aligns with field. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

 Ar, 40 mTorr, 100 W, 10 MHz  With B=0, E-field enhancement at edges produces local maximum in T e.  With B > 0, sheath heating is constrained to layer near substrate.  Tilt reduces T e above wafer where plasma density is maximum and sheath thickness shrinks. T e vs UNIFORM B- FIELD ANGLE University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

 Ar, 40 mTorr, 100 W, 10 MHz BULK IONIZATION vs B-FIELD ANGLE University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE  With B=0, edge enhancement in T e translates to local maximum in bulk ionization.  With B > 0, confining of sheath heated electrons and low transverse mobility elongates ionization.  Tilt localizes ionization on one side of the wafer.

BEAM IONIZATION vs B-FIELD ANGLE University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE  Ar, 40 mTorr, 100 W, 10 MHz  With B=0, mean free paths of secondary electrons exceed gap spacing.  With B > 0, secondary electrons are confined near electrodes.  Tilt in B-field shifts secondary sources in opposite directions top-and-bottom.

PLASMA POTENTIAL  Uniform (0 o ) Animation Slide University of Michigan Institute for Plasma Science and Engineering  Slanted (4 o )  Graded Solenoid GEC08_MERIE  Ar, 40 mTorr, 100 W, 10 MHz, 100 G  Plasma potential reflects tilt in B-field with local perturbations due to positive charging of dielectrics by more mobile ions.

IEAD (CENTER) vs UNIFORM B-FIELD ANGLE  IEDs broaden and move to lower energy with increase in B-field due to sheath reversal.  Tilt in B-field broadens angular distribution and produces angular asymmetries.  With a large tilt, plasma potential has time average tilt leading to angular assymetries. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE  Ar, 40 mTorr, 100 W, 10 MHz, 100 G

IEADs ACROSS WAFER vs B-FIELD ANGLE  With tilts of  5 o significant side-to-side variation in IEAD across wafer.  Broadening in energy of IEAD results from thinner sheath and less of sheath reversal.  Angular asymmetry most severe at low energies.  Ar, 40 mTorr, 100 W,  100 G, 10 MHz, University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE

Ar + : UNIFORM AND GRADED SOLENOIDS University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE  Ar, 40 mTorr, 200 W, 10 MHz  100 G: 0.5 cm above left position  Side-to-side plasma density is highly sensitive to small axial gradients in B-field.  With graded solenoid, plasma density peaks in divergent, lower B- field.  For a fixed power, a larger fractional power is deposited in the less resistive region.

T e, IONIZATION SOURCES: GRADED SOLENOIDS University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE  Beam ionization also penetrates further on the weak field side.  Total ionization is larger inspite of lower electron temperature.  Ar, 40 mTorr, 200 W, 10 MHz  100 G: 0.5 cm above left position

PLASMA POTENTIAL  Uniform (0 o ) Animation Slide University of Michigan Institute for Plasma Science and Engineering  Slanted (4 o )  Graded Solenoid GEC08_MERIE  Ar, 40 mTorr, 100 W, 10 MHz, 100 G  Plasma potential reflects tilt in B-field with local perturbations due to positive charging of dielectrics by more mobile ions.

IEADs: UNIFORM AND GRADED SOLENOID  Graded solenoid produces side-to- side variation in IEAD.  Higher plasma density, thinner sheath and weaker B-field (reduced field reversal) broaden energy. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE  Ar, 40 mTorr, 200 W, 10 MHz  100 G: 0.5 cm above left position

CONCLUDING REMARKS  “Side-to-side” plasma uniformity and IEADs were computationally investigated MERIEs to provide insights to rotating magnetic field systems.  Tilt of 100 G magnetic fields of 5-10 o are sufficient to skew plasma density and produce position dependent IEADs.  Solenoids with only a few percent variation in B-field also produce side-to-side variations.  Plasma density peaks in divergent, low B-field regions due to being less resistive to axial current. University of Michigan Institute for Plasma Science and Engineering GEC08_MERIE