G.Villani jan. 071 CALICE pixel Deep P-Well results Nwell ≈ 900 μm 2 P-well 1μm ring gap Collecting diodes 3.6 x 3.6 μm 2 Bias: NWell 3.5V Diodes: 1.5V.

Slides:

Advertisements

Similar presentations

J.A. Ballin, P.D. Dauncey, A.-M. Magnan, M. Noy

Advertisements

1 RTS effect on fake hit rate in Mimostar3 Xiangming Sun L. Greiner, M. Szelezniak H. Matis T. Stezelberger C. Vu H. Wieman Lawrence Berkeley National.

Study of Photon Sensors using the Laser System 05/7/12 Niigata University, Japan Sayaka Iba, Editha P. Jacosalem, Hiroaki Ono, Noriko.

Studies and status of CMOS-based sensors research and development for ATLAS strip detector upgrade 1 Vitaliy Fadeyev, Zach Galloway, Herve Grabas, Alexander.

1 CALICE simulation results G.Villani 06 Cell size: 50 x 50  m 2 21 hits simulated, 5  m pitch 121 extrapolated hits / pixel 961 extrapolated hits /

G.Villani jan. 071 CALICE pixel Deep P-Well results Nwell 16 μm x 16 μm P-well 17 μm x 17 μm Collecting diodes 3.6 μm x 3.6 μm Bias: NWell 3.5V Diodes:

1 Konstantin Stefanov, CCLRC Rutherford Appleton Laboratory 1 ECFA 2006, Valencia 1 MAPS-based ECAL Option for ILC ECFA 2006, Valencia, Spain Konstantin.

G.Villani march 071 CALICE pixel Deep P-Well results Nwells P-well 3μm guard ring Diodes [3.6,1.8,0.9] x[3.6,1.8,0.9]μm 2 Bias: NWell 1.8/1V Diodes: 1.5V.

November 30th, 2006MAPS meeting - Anne-Marie Magnan - Imperial College London 1 MAPS simulation Application of charge diffusion on Geant4 simulation and.

Tera-Pixel APS for CALICE Progress 20 th October 2006 [JC+RT]

1 The MAPS ECAL ECFA-2008; Warsaw, 11 th June 2008 John Wilson (University of Birmingham) On behalf of the CALICE MAPS group: J.P.Crooks, M.M.Stanitzki,

Tera-Pixel APS for CALICE Progress meeting, 12 th July 2006 Jamie Crooks, Microelectronics/RAL.

Bias Ring Current Carl Goodrich 2/26/08. Carl Goodrich- VELO Meeting2 Sensor: Measurement: IV Data from December V bias Ground.

Tera-Pixel APS for CALICE Progress 19 th January 2007.

Tera-Pixel APS for CALICE Progress 13 th November 2006.

1 CALICE D4 simulation results G.Villani feb. 06 Cell size: 25 x 25  m 2 Epitaxial thickness: 20  m Diode location: S4 Diode size: 1.5 x 1.5  m 2 Cell.

1 CALICE simulation results G.Villani oct. 06 Progress on CALICE MAPS detector simulations: Results for 1.8 x 1.8 µm 2 Discussions & conclusions Next step.

G.Villani jan. 071 CALICE pixel Deep P-Well results Nwell ≈ 900 μm 2 P-well 1μm ring gap Collecting diodes 3.6 x 3.6 μm 2 Bias: NWell 3.5V Diodes: 1.5V.

Chronopixel R&D status – May 2014 N. B. Sinev University of Oregon, Eugene In collaboration with J.E.Brau, D.M.Strom (University of Oregon, Eugene, OR),

Rutherford Appleton Laboratory Particle Physics Department A Novel CMOS Monolithic Active Pixel Sensor with Analog Signal Processing and 100% Fill factor.

SPiDeR  First beam test results of the FORTIS sensor FORTIS 4T MAPS Deep PWell Testbeam results CHERWELL Summary J.J. Velthuis.

CMOS and Microfluidic Hybrid System on Chip for Molecule Detection Bowei Zhang, Qiuchen Yuan, Zhenyu Li, Mona E. Zaghloul, IEEE Fellow Dept. of Electrical.

Chronopixel status N. B. Sinev University of Oregon, Eugene In collaboration with J.E.Brau, D.M.Strom (University of Oregon, Eugene, OR), C.Baltay, W.Emmet,

Background Issues: Real Time Radiation Measurement S.M.Yang EPC.IHEP Mini-Workshop on BEPCII Background Study March 2008 Institute of High Energy.

Chronopixel project status N. B. Sinev University of Oregon, Eugene In collaboration with J.E.Brau, D.M.Strom (University of Oregon, Eugene, OR), C.Baltay,

First Results from Cherwell, a CMOS sensor for Particle Physics By James Mylroie-Smith

1 Nick Sinev LCWS08, University of Illinois at Chicago November 18, 2008 Status of the Chronopixel project J. E. Brau, N. B. Sinev, D. M. Strom University.

VI th INTERNATIONAL MEETING ON FRONT END ELECTRONICS, Perugia, Italy A. Dorokhov, IPHC, Strasbourg, France 1 NMOS-based high gain amplifier for MAPS Andrei.

1 Radiation damage effects in Monolithic Active Pixel Sensors Implemented in an 0.18µm CMOS process Dennis Doering, Goethe-University Frankfurt am Main.

ALICE Inner Tracking System at present 2 2 layers of hybrid pixels (SPD) 2 layers of silicon drift detector (SDD) 2 layers of silicon strips (SSD) MAPs.

First tests of CHERWELL, a Monolithic Active Pixel Sensor. A CMOS Image Sensor (CIS) using 180 nm technology James Mylroie-Smith Queen Mary, University.

1 Radiation Hardness of Monolithic Active Pixel Sensors Dennis Doering, Goethe-University Frankfurt am Main on behalf of the CBM-MVD-Collaboration Outline.

Chronopixel status N. B. Sinev University of Oregon, Eugene In collaboration with J.E.Brau, D.M.Strom (University of Oregon, Eugene, OR), C.Baltay, W.Emmet,

General status and plan Carried out extensive testing, obtained working pixels and promising radiation tolerance, just submitted engineering run 2013.

CALICE 03/14/05Ed Norbeck U. of Iowa1 PPACs in a Calorimeter Edwin Norbeck University of Iowa.

Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek

UK Activities on pixels. Adrian Bevan 1, Jamie Crooks 2, Andrew Lintern 2, Andy Nichols 2, Marcel Stanitzki 2, Renato Turchetta 2, Fergus Wilson 2. 1 Queen.

Thanushan Kugathasan, CERN Plans on ALPIDE development 02/12/2014, CERN.

26 Apr 2009Paul Dauncey1 Digital ECAL: Lecture 2 Paul Dauncey Imperial College London.

Status of photon sensor study at Niigata University -- SiPM and MPPC -- Photon sensor mini workshop 05/9/16 University Niigata University.

PIXEL Slow Simulation Xin Li 3/16/2008. CMOS Active Pixel Sensor (APS) Epitaxy is a kind of interface between a thin film and a substrate. The term epitaxy.

Rutherford Appleton Laboratory Particle Physics Department G. Villani CALICE MAPS Prague September TWEPP-07 Topical Workshop on Electronics for.

Radiation hardness of Monolithic Active Pixel Sensors (MAPS)

26 Apr 2009Paul Dauncey1 Digital ECAL: Lecture 3 Paul Dauncey, Imperial College London.

9 th “Trento” Workshop on Advanced Silicon Radiation Detectors Genova, February 26-28, 2014 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica.

26 Jan 2010Paul Dauncey1 TPAC papers Paul Dauncey.

Rutherford Appleton Laboratory Particle Physics Department G. Villani CALICE MAPS Siena October th Topical Seminar on Innovative Particle and.

Custom mechanical sensor support (left and below) allows up to six sensors to be stacked at precise positions relative to each other in beam The e+e- international.

Test structures for the evaluation of TowerJazz 180 nm CMOS Imaging Sensor technology  ALICE ITS microelectronics team - CERN.

Chronopixel R&D status – October 2013 N. B. Sinev University of Oregon, Eugene In collaboration with J.E.Brau, D.M.Strom (University of Oregon, Eugene,

Tera-Pixel APS for CALICE Progress meeting, 6 th June 2006 Jamie Crooks, Microelectronics/RAL.

4 Jun 2008Paul Dauncey1 Crosstalk and laser results Paul Dauncey, Anne-Marie Magnan, Matt Noy.

Eleuterio SpiritiILC Vertex Workshop, April On pixel sparsification architecture in 130nm STM technology ILC Vertex Workshop April 2008 Villa.

Monolithic and Vertically Integrated Pixel Detectors, CERN, 25 th November 2008 CMOS Monolithic Active Pixel Sensors R. Turchetta CMOS Sensor Design Group.

G.Villani Aug. 071 CALICE pixel Laser testing update Laser MIP equivalent calibration update Si detector coupled to low noise CA + differentiator (no shaper)

Konstantin Stefanov 05/10/ Detecting elements for the CALICE MAPS design How does the collected charge depend on 1.Diode size? 2.Diode position with.

1 An X-ray fluorescence spectrometer using CMOS-sensors AD AD vanced MO MO nolithic S S ensors for Supported by BMBF (06FY9099I and 06FY7113I), HIC for.

Design and Characterization of a Novel, Radiation-Resistant Active Pixel Sensor in a Standard 0.25 m CMOS Technology P.P. Allport, G. Casse, A. Evans,

S.Movchan Straw prototype beam test into the NA48 infrastructure

Charge collection studies with irradiated CMOS detectors

Simple charge diffusion model

Detecting elements for the CALICE MAPS design

Charge diffusion model (again)

TCAD Simulation and test setup For CMOS Pixel Sensor based on a 0

PIXEL Slow Simulation Status Report

CALICE simulation results G.Villani 06

R&D of CMOS pixel Shandong University

Stefano Zucca, Lodovico Ratti

MALTA Investigator I-V Measurements

Presentation transcript:

G.Villani jan. 071 CALICE pixel Deep P-Well results Nwell ≈ 900 μm 2 P-well 1μm ring gap Collecting diodes 3.6 x 3.6 μm 2 Bias: NWell 3.5V Diodes: 1.5V 50 μm x 50 μm pixel size P-well contact ground Hit points

G.Villani jan. 072 CALICE pixel Deep P-Well results Nwell 3.6 x 3.6 μm 2 P-well 1μm ring gap Collecting diodes 3.6 x 3.6 μm 2 Bias: NWell 3.5V Diodes: 1.5V 50 μm x 50 μm pixel size P-well contact ground Hit point P-well 5μm guard ring

G.Villani jan. 073 CALICE pixel Deep P-Well results ≈ 144 mV ≈ 202 mV ≈ 9.5 μm V μmμm μmμm top Epitaxial layer potential well Deep P Well Ring z= 31 μm)

G.Villani jan. 074 CALICE pixel Deep P-Well results Single pixel results No Pwell Guard ring Diodes Charge collected (e - ) e-e- 92 ns/31e - NW 161 ns /352e - NW55 ns/71e - NW 139 ns/103e - NW D t c / NW Charge collected

G.Villani jan. 075 CALICE pixel Deep P-Well results Single pixel results 5 μm Pwell Guard ring 238 e - Diodes /1e - NW/ 107 ns t c

G.Villani jan. 076 ConclusionsConclusions The layout with increased central well size shows a decrease in efficiency of charge collection: however, a S/N min should still exceed 10 Collection time still well below 200 ns. P Well Guard ring of 5 μm makes worst hit (21) lower but still acceptable with 3.6 μm central N Well Next step: Different size diodes simulations (7.6 / 1.8 μm) Final layout simulation CALICE pixel Deep P-Well results

G.Villani jan. 077 CALICE pixel Deep P-Well results Narrow ( 3 μm ?) P-Well guard ring around each pixel