Chapter 4. MOS Systems Total 3 hours.. The Adventure of Carriers The description must now borrow a picture from the classical books of adventure. To place.

Slides:



Advertisements
Similar presentations
MICROWAVE FET Microwave FET : operates in the microwave frequencies
Advertisements

Charge Couple Devices Charge Couple Devices, or CCDs operate in the charge domain, rather than the current domain, which speeds up their response time.
ECSE-6230 Semiconductor Devices and Models I Lecture 14
6.1 Transistor Operation 6.2 The Junction FET
Chapter 6 The Field Effect Transistor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative)
EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]
Lecture 10: PN Junction & MOS Capacitors
The metal-oxide field-effect transistor (MOSFET)
Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC
Spring 2007EE130 Lecture 30, Slide 1 Lecture #30 OUTLINE The MOS Capacitor Electrostatics Reading: Chapter 16.3.
Chapter V July 15, 2015 Junctions of Photovoltaics.
1D or 2D array of photosensors can record optical images projected onto it by lens system. Individual photosensor in an imaging array is called pixel.
MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.
ECE 431 Digital Circuit Design Chapter 3 MOS Transistor (MOSFET) (slides 2: key Notes) Lecture given by Qiliang Li 1.
Field-Effect Transistor
EE130/230M Review Session 1.Small Signal Models for MOSFET/BJT 2.MOS Electrostatics.
Qualitative Discussion of MOS Transistors. Big Picture ES220 (Electric Circuits) – R, L, C, transformer, op-amp ES230 (Electronics I) – Diodes – BJT –
1 Semiconductor Detectors  It may be that when this class is taught 10 years on, we may only study semiconductor detectors  In general, silicon provides.
Norhayati Soin 06 KEEE 4426 WEEK 7/1 6/02/2006 CHAPTER 2 WEEK 7 CHAPTER 2 MOSFETS I-V CHARACTERISTICS CHAPTER 2.
Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.
ECE 875: Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V
Norhayati Soin 06 KEEE 4426 WEEK 3/2 13/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 2) CHAPTER 1.
Qualitative Discussion of MOS Transistors. Big Picture ES230 – Diodes – BJT – Op-Amps ES330 – Applications of Op-Amps – CMOS Analog applications Digital.
DMT121 – ELECTRONIC DEVICES
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 30 Metal-Semiconductor Contacts Real semiconductor devices and ICs always contain.
NMOS PMOS. K-Map of NAND gate CMOS Realization of NAND gate.
ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.
Norhayati Soin 06 KEEE 4426 WEEK 3/1 9/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 1) CHAPTER 1.
Chapter 2 MOS Transistors. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR.
PROCESS AND DEVICE SIMULATION OF A POWER MOSFET USING SILVACO TCAD.
UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY
Structure and Operation of MOS Transistor
Introduction to MOS Transistors Section Selected Figures in Chapter 15.
HO #3: ELEN Review MOS TransistorsPage 1S. Saha Long Channel MOS Transistors The theory developed for MOS capacitor (HO #2) can be directly extended.
Introduction to MOS Transistors Section Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model.
Terminal Impedances Eq Eq Eq
Norhayati Soin 06 KEEE 4426 WEEK 3/2 20/01/2006 KEEE 4426 VLSI WEEK 4 CHAPTER 1 MOS Capacitors (PART 3) CHAPTER MOS Capacitance.
Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First Time User Guide to MOSCAP*
MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.
Introduction to semiconductor technology. Outline –6 Junctions Metal-semiconductor junctions –6 Field effect transistors JFET and MOS transistors Ideal.
MOS Capacitor Picture.
Integrated Circuit Devices
Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,
Electrical Energy. Electric Potential Energy Note: Energy is scalar, so keep the sign on the charge +d means movement in the same direction as the E-field.
Semiconductors. O A Semiconductor is a material whose resistivity is between that of a good conductor and a good insulator. O Examples of materials which.
MOS capacitor before joining The metallic gate may be replaced with a heavily doped p+ polysilicon gate. The Fermi energy levels are approximately at.
The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.
MOS CAPACITOR Department of Materials Science & Engineering
Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.
Introduction to MOS Transistors
MOS Transistor Theory The MOS transistor is a majority carrier device having the current in the conducting channel being controlled by the voltage applied.
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 1.
MOS Capacitor Lecture #5. Transistor Voltage controlled switch or amplifier : control the output by the input to achieve switch or amplifier Two types.
Chapter 6 The Field Effect Transistor
Chapter 2 MOS Transistors.
Lecture 15 OUTLINE The MOS Capacitor Energy band diagrams
Recall Last Lecture Common collector Voltage gain and Current gain
Revision CHAPTER 6.
6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.
EMT362: Microelectronic Fabrication CMOS ISOLATION TECHNOLOGY Part 1
ECE574 – Lecture 3 Page 1 MA/JT 1/14/03 MOS structure MOS: Metal-oxide-semiconductor –Gate: metal (or polysilicon) –Oxide: silicon dioxide, grown on substrate.
Chapter 1 – Semiconductor Devices – Part 2
Sung June Kim Chapter 16. MOS FUNDAMENTALS Sung June Kim
Lecture #15 OUTLINE Diode analysis and applications continued
Lecture 15 OUTLINE The MOS Capacitor Energy band diagrams
EE ILOs ILO # Description
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
MOS Capacitors Dr. David W. Graham West Virginia University
Presentation transcript:

Chapter 4. MOS Systems Total 3 hours.

The Adventure of Carriers The description must now borrow a picture from the classical books of adventure. To place a negative electrode against a semiconductor with negative carriers - this is like bringing a ship up to a quay in the Orient, with the yellow flag of the plague hoisted. The place becomes deserted by its carriers. Unloading - current - is blocked. But exchange that negative flag of pestilence for a positive sign and the carriers will return, the contact becoming conducting. Electrically this is called rectification. In those seafaring tales it was perhaps possible to induce the carriers to return, without striking the flag, merely by throwing some gold coins on the quay, thus positively destroying the insulation. It is possible to destroy the blockade in the semiconductor in a similar fashion by throwing in some positive holes around which the negative carriers will gather. This is transistor action. It is a fine thing that the carriers' strike can be broken up by rather few holes, which do not cost much energy.

Energy Levels

Equilibrium Band Diagram Equilibrium implies the existence of a path for charge flow between the metal and the silicon other than the oxide. But a barrier for electron flow along both directions

Voltage Drop across Oxide Depends upon specific oxide properties.

Flat-Band Condition

Accumulation

Depletion

Inversion

Onset of Strong Inversion

MOS Capacitor

Capacitance of MOS Systems

Capacitance Accumulation: Determined by oxide Flat band: Debye length (no surface potential) Depletion: Width of the surface depletion layer Inversion –Low frequency: Inversion layer population can follow –High frequency: Inversion layer cannot respond; charge modulated by the movement of carriers at the far edge of the depletion layer –Deep depletion: Inversion layer cannot form at all

Charge in Oxide Flat band

Charge-Coupled Devices How is an image stored digitally? How to acquire an image? What are the basic principles of charge-coupled devices (CCDs)? pixels, or picture elements

Charge-Coupled Device CCDs consist of almost entirely close spaced array of MOS capacitors. In a MOS capacitor, the electrical signal is represented by the channel (inversion layer) charge, which can be transferred to the channel region of the adjacent device.

The nine-stage CCD illustrates how information is transferred from left to right, by changing gate voltages.