Comparison of Cleaning Methods for Thin Film Surfaces Lena Johnson, Mitch Challis, Ross Robinson, Richard Sandberg Group 4 English 316 Oral Report June.

Slides:



Advertisements
Similar presentations
Optical Properties of Thin- film Uranium Oxide in the XUV Shannon Lunt, David D. Allred, R. Steven Turley, Elke Jackson, Kristi Adamson, Richard Sandberg.
Advertisements

Eliminating organic contamination on oxidized Si surfaces using atomic oxygen Liz Strein, David Allred, R. Steven Turley, and the EUV/thin films group.
1 Uranium Oxide as a Highly Reflective Coating from 2.7 to 11.6 Nanometers William R. Evans, Richard L. Sandberg, David D. Allred*, Jed E. Johnson, R.
AMCF Materials Characterization School 2012 X-Ray Photoelectron Spectroscopy Tim Morgan.
Cleaning of Hydrocarbon Buildup on Metallic-oxide Thin-Films Richard Sandberg Shannon Lunt, Elke Jackson, Kristi Adamson, Ross Robinson, Guillermo Acosta,
ECE/ChE 4752: Microelectronics Processing Laboratory
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.
1 Extreme Ultraviolet Polarimetry Utilizing Laser-Generated High- Order Harmonics N. Brimhall, M. Turner, N. Herrick, D. Allred, R. S. Turley, M. Ware,
Vicki Bourget & Vinson Gee April 23, 2014
One Way Circuits Limited Printed Circuit Board Manufacturer A Guide To Manufacturing Multilayer PCBs Use Left and Right Cursor keys to navigate ESC to.
299 Analysis For data: 299step.xlsx, 299.pxp. Summary of Nb (15nm)/Al 2 O 3 (15nm Pad;4-0nm wedge)/Co(30nm) 2.Try to etch Nb with CF 4 3.Nb etch.
Silicon Wafer Cleaning for EUV Reflectance Measurements by Cold, High-Pressure CO 2 Jet William Evans Brigham Young University.
Determining Optical Properties of Uranium Oxide Richard Sandberg Brigham Young University Special Thanks to Kristi Adamson, Shannon Lunt, Elke Jackson,
10 October 2005 Determining Optical Constants for ThO 2 Thin Films Sputtered Under Different Bias Voltages from 1.2 to 6.5 eV by Spectroscopic Ellipsometry.
X-Ray Photoelectron Spectroscopy (XPS)
16 Aug Aug 2006 Optical Constants of Sputtered Thoria Thin Films Useful in EUV Optics from IR to EUV David D. Allred Brigham Young University.
Plasmon enhanced thin-film solar cells: Advanced theoretical analysis and ellipsometric characterization Supervisor: Jesper Jung Postdoc
16 August 2006 Using Simultaneous Reflection and Transmission Measurements of Oxide to Help Determine Optical Constants in the EUV D. D. Allred, G. A.
Removing Contaminants From Si Wafers Using an O 2 Plasma Ross Robinson Aaron Jackson.
Working towards High Reflectivity in the Extreme Ultraviolet & Soft X-ray Students: Guillermo A. Acosta, Marie K. Urry, Richard L. Sandberg, Kristi R.
What does the EUV and thin film group do? 1.Optical properties of matter in the EUV and Soft X-rays 2.Thin film preparation and characterization  Allred.
Thorium Oxide Thin Films as EUV Reflectors Jed Johnson Dr. David D. Allred Brigham Young University.
1 The Effects of Oxidation on the Index of Refraction of Uranium Thin Films in the Extreme Ultraviolet Heidi Dumais.
1 Oxidation Effects on the Optical Constants of Heavy Metals in the Extreme Ultraviolet Amy Grigg R. Steven Turley Brigham Young University.
2 May May 2006 Determining Optical Constants for ThO 2 Thin Films Sputtered Under Different Bias Voltages from 1.2 to 6.5 eV by Spectroscopic Ellipsometry.
Uranium Oxide as a Highly Reflective Coating from 2.7 to 11.6 Nanometers Richard L. Sandberg Thanks to Advisors: David D. Allred, R. Steven Turley Fellow.
Thorium Based Thin Films as EUV Reflectors
1 X-Ray Photoelectron Molecular By Amy Baker R. Steven Turley, David Allred, Matt Linford, Yi Lang, BYU Thin Special Thanks to R. Steven Turley, David.
An Initial Study of the Surface Contamination and Oxidation on Silicon Liz Strein, Amy Grigg, and Dr. David Allred.
REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS Jed Johnson Brigham Young University.
Determining Optical Properties of Uranium Oxide Richard Sandberg Brigham Young University Special Thanks to Kristi Adamson, Shannon Lunt, Elke Jackson,
The Deposition Process
YoHan Kim  Thin Film  Layer of material ranging from fractions of nanometer to several micro meters in thickness  Thin Film Process 
MEMs Fabrication Alek Mintz 22 April 2015 Abstract
Fabrication of Active Matrix (STEM) Detectors
Metal photocathodes for NCRF electron guns Sonal Mistry Loughborough University Supervisor: Michael Cropper (Loughborough University) Industrial Supervisor:
Cleaning of Hydrocarbon Buildup on Metallic-oxide Thin-Films Richard Sandberg Ross Robinson, Dr. David Allred, Dr. R. Steven Turley, Aaron Jackson, Shannon.
Methods in Surface Physics Experimentation in Ultra-High Vacuum Environments Hasan Khan (University of Rochester), Dr. Meng-Fan Luo (National Central University)
Andrew Jacquier Brigham Young University
Reforming and Fixation of Carbon Oxides in Atmospheric Pressure Non- thermal CO/CO 2 Plasmas Robert Geiger Advisor: Dr. David Staack Texas A&M Mechanical.
ANALYSIS OF ANOMALOUS FILM GROWTH WHEN YTTRIUM OXIDE IS EXPOSED TO VACUUM- ULTRAVIOLET LIGHT Presenter: Devon R. Mortensen Contributors: Thomas McConkie.
Optical Constants of Uranium Nitride Thin Films in the EUV (7-15 nm) Marie K. Urry EUV Thin Film Group Brigham Young University.
Uranium Oxide and Uranium Nitride as Highly Reflective Coatings from 2.7 to 11.6 Nanometers Richard L. Sandberg, Marie K. Urry, Shannon Lunt David D. Allred,
SEMINAR ON IC FABRICATION MD.ASLAM ADM NO:05-125,ETC/2008.
Influence of oxygen content on the 1.54 μm luminescenceof Er-doped amorphous SiO x thin films G.WoraAdeola,H.Rinnert *, M.Vergnat LaboratoiredePhysiquedesMate´riaux.
1 K. Overhage, Q. Tao, G. M. Jursich, C. G. Takoudis Advanced Materials Research Laboratory University of Illinois at Chicago.
Chapter Extra-2 Micro-fabrication process
1 X-Ray Photoelectron Spectroscopy to Examine Molecular Composition Amy Baker R. Steven Turley Brigham Young University.
Optical Properties and Application of Uranium-based Thin-Films for the Extreme Ultraviolet and Soft X-ray Region Richard L. Sandberg, David D. Allred,
Optical Constants of Uranium Nitride Thin Films in the EUV ( eV) Marie K. Urry EUV Thin Film Group Brigham Young University.
Determining the Optical Constants of EUV Reflectors Jedediah Johnson Dr. David Allred.
Thorium Based Thin Films as EUV Reflectors Jed Johnson Brigham Young University.
Center for Materials for Information Technology an NSF Materials Science and Engineering Center Substrate Preparation Techniques Lecture 7 G.J. Mankey.
Passivation of HPGe Detectors at LNL-INFN Speaker: Gianluigi Maggioni Materials & Detectors Laboratory (LNL-INFN) Scientific Manager: Prof. Gianantonio.
Single photon counting detector for THz radioastronomy. D.Morozov 1,2, M.Tarkhov 1, P.Mauskopf 2, N.Kaurova 1, O.Minaeva 1, V.Seleznev 1, B.Voronov 1 and.
7 April 2006 Simultaneous Reflection and Transmission Measurements of Scandium Oxide Thin Films in the Extreme Ultraviolet G. A. Acosta, D. D. Allred,
+ Analysis of Anomalous Film Growth when Yttrium Oxide Thin Films are Exposed to 7.2eV Light Alison Wells Dr. David D. Allred Devon Mortenson Kristal Chamberlain.
In What happens to a carbon atom over time?
Extreme Ultraviolet Polarimetry Utilizing High-Order Harmonics Nicholas Herrick, Nicole Brimhall, Justin Peatross Brigham Young University.
Kristal Chamberlain Wellesley College Class of 2012.
Determining Physical and Chemical Constants of Sputtered Uranium and Thorium as Thin Film Reflectors Within the Extreme Ultraviolet (EUV) Winston Larson.
Microchip production Using Extreme Ultra Violet Lithography
Auger Electron Spectroscopy (AES)
Fabrication of Photonic Crystals devices Hamidreza khashei
-Honors Thesis Defense- In Situ Ellipsometry of Surfaces in an Ultrahigh Vacuum Thin Film Deposition Chamber Joseph Choi Department of Physics and Astronomy,
IISME Fellowship Description
REMOVING SURFACE CONTAMINATES FROM SILICON WAFERS
Use of a commercial RF Plasma Cleaner in eliminating
BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.
1) Wafer Cleaning Oxidizing – Field Oxide (~130 nm)
Presentation transcript:

Comparison of Cleaning Methods for Thin Film Surfaces Lena Johnson, Mitch Challis, Ross Robinson, Richard Sandberg Group 4 English 316 Oral Report June 16, 2003

EUV Lithography Images from EUV Astronomy EUV Microscopes Applications for EUV Light Research Multilayer Mirrors

How small is that?  Want to reflect EUV (extreme ultraviolet) light (50-5 nm or cm) Image from

The Problem  Organic contaminants collect on the surface (Junk). –Interferes with measuring optical constants  Example with visible light

Question: How do we effectively remove contaminants? Outline 1. Measurement methods 2. Cleaning methods -Opticlean ® -Plasma Etch -UV lamp 3. Conclusions

Video  Measurement method –Ellipsometry  Cleaning methods tested –Opticlean –UV Lamp –Plasma Etch

Opticlean ® Process leaves hydrocarbon residue Opticlean ® significantly removes contaminants, but leaves a residue Ellipsometric Results Opticlean ® residue thickness on two runs: 1)17 Ångstroms 2)22 Ångstroms Opticlean ® made by Dantronix Research and Technologies, LLC Ellipsometer Type: J.A. Woollam Co., Inc Multi-Wavelength Ellipsometer (EC110)

Does the Opticlean ® process damage thin films?  Scanning Electron Microscope showed no thin film damage, nor trace of materials used in thin films on pulled of Opticlean ® films (U, Sc, Va).  X-Ray Photoelectron Spectroscopy found no trace of materials used in thin films on pulled of Opticlean ®.

Opticlean ® XPS revealed components of Opticlean ®, but not heavier metals used in thin films. Prominent thin-film lines: U-380 eV, V-515 eV, Sc-400 eV Photon Energy (eV) Photons (Counts) 97 eV (Si 2p) 148 eV (Si 2s) 281 eV (C 1s) 527 eV (O 1s)684 eV (F 1s)

Cleaning residue with “Matrix” Plasma Etch  RF Plasma Etching with O 2 Plasma –0.120 Torr Pressure –250W RF (max 350) –0.75 SCCM O 2 flow –No extra heat applied  Good for removing polymers, but not bulk contaminants (i.e. Dust)  Oxygen plasma plus mechanical sputtering removes surface layers RF

Plasma Results

UV Lamp

UV Results

Conclusion  Recommended Procedure: –UV lamp for 5 minutes MethodEffectivenessCleaning TimeEase of UseNotes Opticlean®Left residueMust wait for polymer to cure Can be difficult to peel off. Good for dust etc.. Oxygen PlasmaEffective. Cl not completely removed Setup takes a few minutes. Clean under a minute Equipment in clean room. Complex to setup. Builds up silicon dioxide Eximer UV LampEffective1 to 5 minutesVery easyLess silicon dioxide buildup then plasma. Opticlean ® + Oxygen Plasma Effective Possible 1 Å residue or oxide Long, plasma setup and polymer cure time. Complex clean room equipment and skill needed to peel

Conclusion  Recommended Procedure: –UV lamp for 5 minutes MethodEffectivenessCleaning TimeEase of UseNotes Opticlean®Left residueMust wait for polymer to cure Can be difficult to peel off. Good for dust etc.. Oxygen PlasmaEffective. Cl not completely removed Setup takes a few minutes. Clean under a minute Equipment in clean room. Complex to setup. Builds up silicon dioxide Eximer UV LampEffective1 to 5 minutesVery easyLess silicon dioxide buildup then plasma. Opticlean ® + Oxygen Plasma Effective Possible 1 Å residue or oxide Long, plasma setup and polymer cure time. Complex clean room equipment and skill needed to peel