Multiple current exposure without mark detection Possible? Tolerance? Using only the 4 th lens: –1 st exposure: 0.1nA, 2 nd aperture (min. current) –2 nd exposure: 10nA, 2 nd aperture (max. current)

Multiple current exposure with mark detection Requires a prior lithography (UV or ebeam) Using only the 4 th lens: –small features, 0.1nA, 1 st aperture –large features, 10nA, 3 rd aperture Using the 4 th and 5 th lens: –small features, 5 th lens, 30pA, 1 st aperture –large features, 4 th lens, 10nA, 3 rd aperture

Switching between 5 th and 4 th lens There is a shift in coordinates between the lenses 5 th 4 th X → X µm Y → Y - 53 µm