Sinai University Faculty of Engineering Science Department of Basic science 7/14/2015 1 W6.

Slides:



Advertisements
Similar presentations
Chapter 18: Electrical Properties
Advertisements

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Basic semiconductor physics.
1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University October 2, 2014 DEE4521 Semiconductor Device Physics Lecture.
CH 20-1.
 Lecture 3 .  Dielectric Materials  Dielectric materials are also called as insulators.  In dielectric materials, all the electrons are tightly bound.
Sinai University Faculty of Engineering Science Department of Basic sciences 5/20/ From Principles of Electronic Materials and Devices, Third Edition,
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) These PowerPoint color diagrams can only be used by.
Conduction in Metals Atoms form a crystal Atoms are in close proximity to each other Outer, loosely-bound valence electron are not associated with any.
1 Chapter 27 Current and Resistance. 2 Electric Current Electric current is the rate of flow of charge through some region of space The SI unit of current.
Chapter 25 Current, Resistance, Electromotive Force
Current, Resistance, and Electromotive Force
K L University 1. 2 MAGNETOSTATICS 3 Introduction to Magneto statics – Magnetic field, Magnetic force, Magnetic flux Biot-Savat’s law -- Applications.
Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Current, Resistance, and Electromotive Force
M V V K Srinivas Prasad K L University.  Ohm’s Law ◦ At constant temperature the current flowing through a conductor is directly proportional to the.
Metals: Free Electron Model Physics 355. Free Electron Model Schematic model of metallic crystal, such as Na, Li, K, etc.
Lecture 24: Electrical Conductivity
 Electrical conductivity is a measure of a material's ability to conduct an electric current.  Metals are considered to be good conductors of electricity.
Unit 3, Day 4: Microscopic View of Electric Current Current Density Drift Velocity Speed of an Electron in as Wire Electric Field inside a Current Carrying.
Electric (conduction) current I I According to general agreement its direction is chosen to coincide with the direction in which positive.
Current and Resistance Chapter 26 Copyright © 2014 John Wiley & Sons, Inc. All rights reserved.
Electric Current, Ohm’s Law, and Electric Circuits ISAT 241 Fall 2002 David J. Lawrence.
-Electric Current -Resistance -Factors that affect resistance -Microscopic View of Current AP Physics C Mrs. Coyle.
Sinai University Faculty of Engineering Science Department of Basic Science 3 September 20151W6.
Current and Direct Current Circuits
Usually a diluted salt solution chemical decomposition
Electrical Conduction in Solids
Regents Physics Circuits Unit Part I Resistivity and Ohm’s Law.
 I1I1   R R R I2I2 I3I3 Lecture 11 Current & Resistance.
Electronics 1 Lecture 2 Ahsan Khawaja Lecturer Room 102 Department of Electrical Engineering.
Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. ECE 255: Electronic Analysis and Design Prof. Peide (Peter)
Chapter 26 Current and Resistance. 26.2: Electric Current: Although an electric current is a stream of moving charges, not all moving charges constitute.
Chapter 27 Current and Resistance Scalar Sense determined by the movement of the positive charge carrier Average Electric Current Instantaneous Electric.
EEE 3394 Electronic Materials Chris Ferekides Fall 2014 Week 8.
ELEC 3105 Basic EM and Power Engineering Conductivity / Resistivity Current Flow Resistance Capacitance Boundary conditions.
Current and Resistance Chapter 26 Copyright © 2014 John Wiley & Sons, Inc. All rights reserved.
© 2005 Pearson Prentice Hall This work is protected by United States copyright laws and is provided solely for the use of instructors in teaching their.
These PowerPoint color diagrams can only be used by instructors if the 3rd Edition has been adopted for his/her course. Permission is given to individuals.
Ohm’s Law and Resistance AP Physics C Montwood High School R. Casao.
BASIC ELECTRONICS Module 1 Introduction to Semiconductors
Electrical and Thermal Conduction
Current, Resistance, and Electromotive Force
Electronics 1 Lecture 3 Moving Charge Carriers
CHAPTER 3: CARRIER CONCENTRATION PHENOMENA
ELECTRON THEORY OF METALS 1.Introduction: The electron theory has been developed in three stages: Stage 1.:- The Classical Free Electron Theory : Drude.
Dr. Jie ZouPHY Chapter 27 Current and Resistance.
Chapter 26 CURRENT ELECTRICITY Electric Current (I) –rate of positive charge passing through a surface I=dQ/dt –units Coulomb/Second = Ampere (C/s = A)
Current, Resistance, and Electromotive Force
부산대학교 재료공학부 계면공학 연구실 [Electrical Properties] Chap. 4. Electrical Properties  Electrical properties are the physical conditions that allow an electrical.
HALL EFFECT TRANSDUCERS As already explained in- Art page 562, when a conductor is kept perpendicular to the magnetic field and a direct current.
The Hall Effect AP Physics Montwood High School R.Casao.
CSE251 CSE251 Lecture 2 and 5. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.
Chapter 27 Current And Resistance. Electric Current Electric current is the rate of flow of charge through some region of space The SI unit of current.
PHYSICAL ELECTRONICS ECX 5239 PRESENTATION 01 PRESENTATION 01 Name : A.T.U.N Senevirathna. Reg, No : Center : Kandy.
INTRINSIC SEMICONDUCTOR  A pure semiconductor.  Its conductivity is low.  It has thermally generated current carries.  Examples of pure or intrinsic.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) These PowerPoint color diagrams can only be used by.
Current, Resistance, and Electromotive Force
Electrical Engineering Materials
Chapter five conduction
Current Electricity © JOHN PARKINSON.
Prof. Jang-Ung Park (박장웅)
Electrical Engineering Materials
Current, Resistance, and Electromotive Force
Microscopic Model of Conduction
Introduction to Materials Science and Engineering
Current and Resistance
Basic Physics of Semiconductors (1)
Current and Resistance
Presentation transcript:

Sinai University Faculty of Engineering Science Department of Basic science 7/14/ W6

Fig 2.16 Illustration of the Hall effect. The z direction is out of the plane of the paper. The externally applied magnetic field is along the z direction. 2.5 Hall effect and hall devices W6

Fig 2.17 A moving charge experiences a Lorentz force in a magnetic field. (a)A positive charge moving in the x direction experiences a force downwards. (b)A negative charge moving in the -x direction also experiences a force downwards. F = qv  B Effect of magnetic field on a moving charges W6

R H = Hall coefficient, E H =-E y = electric field in the y-direction, J x = current density in the x-direction, B z = magnetic field in the z- direction Definition of Hall Coefficient In the steady state: Electric force= magnetic force W6

Applications If V H is measured From polarity determine type of charge carrier +ve or -ve determine B if n is known, magnetometer 10nT, ~10mV/mT, B earth ~50  T determine n if B is known, material constants Wattmeter Magnetically actuated electronic switches, Apply B and produce V H

Assignment Write about an application of Hall effect as an electronic switch W6

Fig 2.18 Load voltage and load current have L as subscript; C denotes the current coils for setting up a magnetic field through the Hall-effect sample (semiconductor). W6 Wattmeter based on the Hall effect.

Ex 2.17 Hall Mobility Fig 2.18W6

Fig 2.19 Thermal conduction in a metal involves transferring energy from the hot region to the cold region by conduction electrons. More energetic electrons (shown with longer velocity vectors) from the hotter regions arrive at cooler regions and collide there with lattice vibrations and transfer their energy. Lengths of arrowed lines on atoms represent the magnitudes of atomic vibrations. W6 2.6 Thermal conduction In Metals: electron cloud In Non-Metal: lattice vibration

Fig 2.20 Heat flow in a metal rod heated at one end. Consider the rate of heat flow, dQ/dt, across a thin section δx of the rod. The rate of Heat flow is proportional to the temperature gradient δT/δx and the cross-sectional area A. W6 Thermal Conductivity

Fourier’s Law of Thermal Conduction Q = rate of heat flow, Q = heat, t = time,  = thermal conductivity, A = area through which heat flows,  T/  x = temperature gradient I = electric current, A = cross-sectional area,  = electrical conductivity,  V/  x = potential gradient (represents an electric field),  V = change in voltage across  x,  x = thickness of a thin layer at x Ohm’s Law of Electrical Conduction W6

Wiedemann-Franz-Lorenz Law  = thermal conductivity  = electrical conductivity T = temperature in Kelvins C WFL = Lorenz number W6

Fig 2.21 Thermal conductivity  versus electrical conductivity  for various metals (elements and alloys) at 20 ˚C. The solid line represents the WFL law with C WFL ≈ 2.44  10 8 W  K -2. W6

Fig 2.22 Thermal conductivity versus temperature for two pure metals (Cu and Al) and two Alloys (brass and Al-14% Mg). SOURCE: Data extracted form I.S. Touloukian, et al., Thermophysical Properties of Matter, vol. 1: “Thermal Conductivity, Metallic Elements and Alloys, “ New York: Plenum, W6

Fig 2.23 Conduction of heat in insulators involves the generation and propagation of atomic Vibrations through the bonds that couple the atoms (an intuitive figure). W6 Nonmetals

2.6.2 Thermal resistance Fourier’s Law Q = rate of heat flow or the heat current, A = cross-sectional area,  = thermal conductivity (material-dependent constant),  T = temperature difference between ends of component, L = length of component Ohm’s Law I = electric current,  V = voltage difference across the conductor, R = resistance, L = length,  = conductivity, A = cross-sectional area W6

Definition of Thermal Resistance Q = rate of heat flow,  T = temperature difference,  = thermal resistance Thermal Resistance  = thermal resistance, L = length, A = cross-sectional area,  = thermal conductivity W6

Fig 2.24 Conduction of heat through a component in (a) can be modeled as a thermal resistance  shown in (b) where =  T/  W6 Thermal resistance

Fig 2.25W6

Fig 2.26 (a) Thermal vibrations of the atoms rupture a bond and release a free electron into the crystal. A hole is left in the broken bond which has an effective positive charge. (b) An electron in a neighboring bond can jump and repair this bond and thereby create a hole in its original site; the hole has been displaced. (c) When a field is applied both holes and electrons contribute to electrical conduction. W semiconductors

Conductivity of a Semiconductor  = conductivity, e = electronic charge, n = electron concentration,  e = electron drift mobility, p = hole concentration,  h = hole drift mobility  = en  e + ep  h v e = drift velocity of the electrons,  e = drift mobility of the electrons, e = electronic charge, F net = net force Drift Velocity and Net Force W6

Fig 2.27 Hall effect for ambipolar conduction as in a semiconductor where there are both electrons and holes. The magnetic field B z is out from the plane of the paper. Both electrons and holes are deflected toward the bottom surface of the conductor and consequently the Hall voltage depends on the relative mobilities and concentrations of electrons and holes. W6

Hall Effect for Ambipolar Conduction R H = Hall coefficient, p = concentration of the holes,  h = hole drift mobility, n = concentration of the electrons,  e = electron drift mobility, e = electronic charge OR b =  e,/  h W6 Assignment: Derive the previous equation

Fig 2.28 Possible contribution to the conductivity of ceramic and glass insulators. (a)Possible mobile charges in a ceramic. (b)An Na + ion in the glass structure diffuses and therefore drifts in the direction of the field. W Ionic crystals and Glasses

General Conductivity  = conductivity q i = charge carried by the charge carrier species i (for electrons and holes q i = e) n i = concentration of the charge carrier  i = drift mobility of the charge carrier of species i W6

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) W6

Fig 2.29 Conductivity versus reciprocal temperature for various low-conductivity solids SOURCE: Data selectively combined from numerous sources. W6

Temperature Dependence of Conductivity  = conductivity    constant    = activation energy for conductivity k = Boltzmann constant, T = temperature W6