Phase Transistions in Ni-Si System With Ti Diffusion Boundary Layer Andrew Smith Advisor: Prof. Kvam University of Purdue, REU Summer Program.

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Presentation transcript:

Phase Transistions in Ni-Si System With Ti Diffusion Boundary Layer Andrew Smith Advisor: Prof. Kvam University of Purdue, REU Summer Program

Overview Objectives Approach Observations Findings Future work

Objectives To study effects of Ti interlayer on Ni-Si system

Approach Anneal samples 350 o C 500 o C 650 o C 800 o C Analyze annealed samples using XRD

Observations False peak- Tungsten contamination Similar results for 500 o C and 650 o C Inconclusive findings for 800 o C

Findings 350 o C Formation of Ni 2 Si after 90min No conclusive NiSi growth at this temperature 500 o C Formation of NiSi Appearance of Ni 3 Si 2, Ni 3 Si

More Findings 650 o C Similar to 500 o C results Check higher temperature 800 o C Uncertain peak with six possibilities Best guess- NiSi 2

Interpretation Pathway similar to previous work How is Ti layer affecting the system? Slows down process

Future Work Further analysis of 800 o C Control XRD machine variables Different techniques to verify guesses Develop NiSi 2 -Si system Measure electrical properties Compare with current MESFETs

Thanks Prof Kvam REU Students REU Program

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