半導體量測技術 Semiconductor Materials and Device Characterization Topic 4: resistance and effective channel length in MOSFET Instructor: Dr. Yi-Mu Lee Department.

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半導體量測技術 Semiconductor Materials and Device Characterization Topic 4: resistance and effective channel length in MOSFET Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

Topics: R and L eff in MOSFET Series resistance in diode Threshold voltage (V t ) and G m Id-Vd Id-Vg (*) Complete resistance model of MOSFET MOSFET parameters: ( ΔL, R T, μ 0, θ) –Teroda method (ΔL, R T, assuming μ eff is constant) –De La Moneda Method –Sucio Johnson methold –C-V method(only have ΔL, no R T )

Topics: Ch. 4-9 and Ch. 6 (D. K. Schroder) Hot electron effect I sub -V g LDD (lightly doped drain)structure Transconductance (g m )and channel conductance (g d ) Chapter 6: Interface trapped charge (Q it, N it, D it ) Fixed oxide charge (Q f, N f ) Oxide trapped charge (Q ot, N ot ) Mobile oxide charge (Q m, N m ) Oxide integrity (p. 389)

D. K. Schroder, p. 249

I sub,max Hot carrier characterization: step-1 D. K. Schroder, p. 250

Step-2: D. K. Schroder, p. 249

Step-3: lifetime determination D. K. Schroder, p. 249

Thinking: D. K. Schroder, p. 256

D. K. Schroder, p. 347

D. K. Schroder, p. 348

D. K. Schroder, p. 349

C-V curve: oxide leakage current Figure E6.4 (D. K. Schroder, p. 355) Ideal CV curve Effect of oxide leakage current on CV curve

D. K. Schroder, p. 338

Fixed charge: oxide/Si interface +ve Determined by V FB shift Measuring V FB : calculate C FB from Eq. (6.20) and Fig. 6.7 To eliminate or reduce the effects of all other oxide charges and interface trapped charge V FB : n + poly/p-Si?p + poly/n-Si?

Oxide trapped charge +ve, -ve Electrons, holes can be injected from the substrate or gate Usually distributed through the oxide Gate: r = 0; oxide/Si interface: r = 1

Homework: 4.11 (D. K. Schroder, p. 258) 4.13 (D. K. Schroder, p. 259)