7th Sino-Korean Symp June 2000 1 Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith Physics Department,

Slides:

Advertisements

Similar presentations

SEWG Meeting Mixed Materials 2007 First results from beryllium on carbon Florian Kost Christian Linsmeier.

Advertisements

TRIUMF UCN workshop, 2007 Solid state physics experiments with UCN E. Korobkina.

Speaker: Xiangshi Yin Instructor: Elbio Dagotto Time: April 15, 2010 (Solid State II project) Quantum Size Effect in the Stability and Properties of Thin.

Equipe Couches Nanométriques : Formation, Interfaces, Défauts

2 nd FEZA School On Zeolites 1-2 September 2008, Paris X-ray photoelectron spectroscopy and its use for solid materials Jacques C. Védrine.

Heterogeneous Catalysis & Solid State Physics Dohyung Kim May 2, 2013 Physics 141A.

Influence of Substrate Surface Orientation on the Structure of Ti Thin Films Grown on Al Single- Crystal Surfaces at Room Temperature Richard J. Smith.

1 EFFECTS OF CARBON REDEPOSITION ON TUNGSTEN UNDER HIGH-FLUX, LOW ENERGY Ar ION IRRADITAION AT ELEVATED TEMPERATURE Lithuanian Energy Institute, Lithuania.

CMSELCMSEL Hanyang Univ. Differences in Thin Film Growth Morphologies of Co-Al Binary Systems using Molecular Dynamics Simulation : In cases of Co on Co(001),

Catalysis and Catalysts - XPS X-Ray Electron Spectroscopy (XPS)  Applications: –catalyst composition –chemical nature of active phase –dispersion of active.

1 NEG films: recent R&D progress Paolo Chiggiato (for the EST-SM-DA section) Vacuum Issues of the LHCb Vertex Detector 28 November NEG films: choice.

Study of sputtering on thin films due to ionic implantations F. C. Ceoni, M. A. Rizzutto, M. H. Tabacniks, N. Added, M. A. P. Carmignotto, C.C.P. Nunes,

Alternative representation of QW Phase accumulation model.

XPS and SIMS MSN 506 Notes.

Alloy Formation at the Co-Al Interface for Thin Co Films Deposited on Al(001) and Al(110) Surfaces at Room Temperature* N.R. Shivaparan, M.A. Teter, and.

Epitaxial Overlayers vs Alloy Formation at Aluminum- Transition Metal Interfaces Richard J. Smith Physics Department Montana State University Bozeman MT.

Alloy Formation at the Epitaxial Interface for Ag Films Deposited on Al(001) and Al(110) Surfaces at Room Temperature* N.R. Shivaparan, M.A. Teter, and.

One-dimensional Ostwald Ripening on Island Growth An-Li Chin ( 秦安立 ) Department of Physics National Chung Cheng University Chia-Yi 621 Taiwan, ROC Prof.

Applications of MeV Ion Channeling and Backscattering to the Study of Metal/Metal Epitaxial Growth Richard J. Smith Physics Department Montana State University.

Catalysis and Catalysts - X-Ray Diffraction (XRD) X-Ray Diffraction Principle: interference of photons by reflection by ordered structures n = 2d sin 

NWAPS-May Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith and V. Shutthanandan* Physics Department,

Thorium Based Thin Films as EUV Reflectors

CMP Seminar MSU 10/18/ What makes Surface Science “surface” science ? R. J. Smith Physics Department, Montana State Univ. Work supported by NSF.

Composition and thickness dependence of secondary electron yield for MCP detector materials Slade J. Jokela, Igor V. Veryovkin, Alexander V. Zinovev, Jeffrey.

Quantum Electronic Effects on Growth and Structure of Thin Films P. Czoschke, Hawoong Hong, L. Basile, C.-M. Wei, M. Y. Chou, M. Holt, Z. Wu, H. Chen and.

The Surface Analysis Laboratory Cutting and Sputtering: Getting to the Buried Interface John F Watts The Surface Analysis Laboratory Department of Mechanical.

CMP Seminar September 22, Growth and Structure of Thin Fe Films on the Ti-Al Interface C. V. Ramana Montana State University

McGill Nanotools Microfabrication Processes

Phases of Matter.

Metal photocathodes for NCRF electron guns Sonal Mistry Loughborough University Supervisor: Michael Cropper (Loughborough University) Industrial Supervisor:

X-RAY PHOTOELECTRON SPECTROSCOPY (XPS)

III. Analytical Aspects Photoelectron Spectroscopy Cheetham & Day, Chapter 3 Surface Technique: cannot provide completely reliable analysis for bulk samples.

Molecular Dynamic Simulation of Atomic Scale Intermixing in Co-Al Thin Multilayer Sang-Pil Kim *, Seung-Cheol Lee and Kwang-Ryeol Lee Future Technology.

Carrier Mobility and Velocity

Ion Beam Analysis Dolly Langa Physics Department, University of Pretoria, South Africa Blane Lomberg Physics Department, University of the Western Cape,

FRANK LABORATORY OF NEUTRON PHYSICS ION BEAM ANALYSIS STANCIU-OPREAN LIGIA SUPERVISOR DR. KOBZEV ALEXANDER.

1 K. Overhage, Q. Tao, G. M. Jursich, C. G. Takoudis Advanced Materials Research Laboratory University of Illinois at Chicago.

2D Islanding of Dodecane on an Au(111) Surface: An Investigation Using He beam Reflectivity and Monte Carlo Modeling Timothy C. Arlen 1, Craig J.D. Webster.

Fabrication and characterization of Au-Ag alloy thin films resistance random access memory C. C. Kuo 1 and J. C. Huang 1,* 1 Department of Materials and.

Atomic Scale Understanding of the Surface Intermixing during Thin Metal Film Growth 김상필 1,2, 이승철 1, 정용재 2, 이규환 1, 이광렬 1 1 한국과학기술연구원, 계산과학센터 2 한양대학교, 재료공학부.

FRANK LABORTORY OF NEUTRON PHYSICS ION BEAM ANALYSIS

EEW508 Structure of Surfaces Surface structure Rice terrace.

D.-A. Luh, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, S. Harvey, R. E. Kirby, T. Maruyama, and C. Y. Prescott Stanford Linear Accelerator.

Sputter deposition.

EEW508 II. Structure of Surfaces Surface structure Rice terrace.

Compositional dependence of damage buildup in Ar-ion bombarded AlGaN K. Pągowska 1, R. Ratajczak 1, A. Stonert 1, L. Nowicki 1 and A. Turos 1,2 1 Soltan.

The International Conference On Metallurgical Coatings And Thin Films ICMCTF 2005 CMSELCMSEL Hanyang Univ. Co/CoAl/Co Trilayer Fabrication Using Spontaneous.

Daniela Adriana LĂCĂTUŞ1 Supervisor: Alexander Pavlovich KOBZEV

Center for Materials for Information Technology an NSF Materials Science and Engineering Center Substrate Preparation Techniques Lecture 7 G.J. Mankey.

Control of Carbon Nanotube Nucleation Rate with a Hydrogen Beam Plasma Paolo Santos 1, Dorothée Alsentzer 3, Thomas B. Clegg 2,3, Sergio Lemaitre 2,3,

Electronic Structure and Chemical Reactivity

Ion Beam Analysis of the Composition and Structure of Thin Films

High Resolution Depth Profiling of Ti Oxidation

CMSELCMSEL Hanyang Univ. 자성재료 박막의 증착 거동에 대한 분자동역학연구 김상필, 이승철 *, 이광렬 *, 정용재 한양대학교 세라믹공학과, *KIST 미래기술연구본부 제 23 회 한국진공학회 학술발표회.

The composition and structure of Pd-Au surfaces Journal of Physical Chemistry B, 2005, 109, C. W. Yi, K. Luo, T. Wei, and D. W. Goodman Bimetallic.

Phase-partitioning and site-substitution patterns of molybdenum in a model Ni-Al-Mo superalloy David N. Seidman, Northwestern University, DMR Atom-probe.

Ion Beams for Surface Topology Modification

Structural Quantum Size Effects in Pb/Si(111)

1.6 Magnetron Sputtering Perpendicular Electric Magnetic Fields.

Quantum Mechanical Control of Surface Chemical Reactivity

금속이 혼입된 DLC 박막의 응력감소 거동 ; 제일원리계산

Criteria of Atomic Intermixing during Thin Film Growth

Effect of Cryogenic Temperature Deposition of Various Metal Contacts to Bulk, Single-Crystal n-type ZnO J. Wright1, L. Stafford1, B.P. Gila1, D.P. Norton1,

IC AND NEMS/MEMS PROCESSES

2005 열역학 심포지엄 Experimental Evidence for Asymmetric Interfacial Mixing of Co-Al system 김상필1,2, 이승철1, 이광렬1, 정용재2 1. 한국과학기술연구원 미래기술연구본부 2. 한양대학교 세라믹공학과 박재영,

Growth Behavior of Co on Al(001) substrate

Co-Al 시스템의 비대칭적 혼합거동에 관한 이론 및 실험적 고찰

Sang-Pil Kim and Kwang-Ryeol Lee Computational Science Center

The Atomic-scale Structure of the SiO2-Si(100) Interface

Presentation transcript:

7th Sino-Korean Symp June Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith Physics Department, Montana State Univ. Work supported by NSF (DMR)

7th Sino-Korean Symp June Metal-metal Interface Structure ä Understand overlayer growth and alloy formation ä Chemical composition and structure of the interface ä Applications: magnetoresistive devices, spin electronics ä Surface energy (broken bonds) ä Chemical formation energy ä Strain energy A B interface

7th Sino-Korean Symp June Metal-metal systems studied... ä Substrates: Al(111), Al(100), Al(110) ä Metal overlayers studied so far: ä Fe, Ni, Co, Pd (atomic size smaller than Al) ä Ti, Ag, Zr (atomic size larger than Al) ä All have surface energy > Al surface energy ä All form Al compounds with  H form < 0 ä Use resistively heated wires ( ~ML/min) ä Deposit on substrate at room temperature

7th Sino-Korean Symp June MV van de Graaff Accelerator

7th Sino-Korean Symp June MSU Ion Beam Laboratory

7th Sino-Korean Symp June Ion scattering chamber ä High precision sample goniometer ä Hemispherical VSW analyzer (XPS, ISS) ä Ion and x-ray sources ä LEED ä Metal wires for film deposition

7th Sino-Korean Symp June Overview of High Energy Ion Scattering (HEIS) ä MeV He + ions ä Yield = Q   (Nt) ä Ni peak for coverage ä Al peak for structure

7th Sino-Korean Symp June Angular Yield (Channeling dip) ä 1 MeV He + ä Al bulk yield ä Ag surface peak ä  inc = 0 o ä  det = 105 o ä ~10 15 ions/cm 2 ä  min = 3.6%

7th Sino-Korean Symp June HEIS: Al yield vs Ni coverage ä Al SP area increases with Ni coverage ä 3 regions with different slopes (2) (0.35) (~0) ä No LEED spots ä Interface alloy forms at room temperature

7th Sino-Korean Symp June HEIS: Al yield vs Fe coverage ä Al SP area increases with Fe coverage ä 3 regions with different slopes (3.2)(0.96)(~0) ä Interface alloy forms at room temperature

7th Sino-Korean Symp June HEIS: Al yield vs Ti coverage ä Ti atoms shadow Al atoms and reduce Al yield ä Critical thickness at ~5 ML ä Simulation (  ) for flat Ti layer in FCC Al sites ä Film relaxes for coverage > 5 ML

7th Sino-Korean Symp June XPS chemical shifts for Ni 2p ä Shifts in BE ä Shifts in satellite ä Compare with XPS for bulk alloys (BE) (sat) (BE) (sat) NiAl eV Ni 2 Al 0.75eV (8.0 eV) NiAl 0.2 eV (7.2 eV) Ni 3 Al 0.0 eV (6.5 eV) Ni 0.0 eV (5.8 eV)

7th Sino-Korean Symp June Snapshots from MC simulations Al(110)+0.5 ML Ni Clean Al(110) Al(110)+2.0 ML Ni ä MC (total energy) using EAM potentials for Ni, Al (Voter) ä Equilibrate then add Ni in 0.5 ML increments (solid circles) ä Ion scattering simulations (VEGAS)

7th Sino-Korean Symp June Ion scattering simulations using VEGAS and the MC snapshots ä Measured (o) Simulation (  ) ä Slopes agree ä Change of slope at 2 ML correct ä Good agreement so use snapshots for more insight

7th Sino-Korean Symp June Composition profiles using the snapshots for Al(110) + Ni ä Ni atoms go into surface ä Al atoms move out ä Make dense NiAl layer ä Process changes after 2ML

7th Sino-Korean Symp June Layer-resolved ion scattering yield using the snapshots of Al(110) + Ni ä ~1Al/Ni top 15 layers ä ~1Al/Ni next 15 layers! ä Ni atoms and dense interface structure cause dechanneling below the surface

7th Sino-Korean Symp June XPS: Comparison of Calculated and Measured Intensities at 30 C ä XPS intensity vs Ni coverage ä Best agreement with data for Ni = 5.2 Å Al = 15 Å ä Universal curve Ni = 13.5 Å Al = 20.2 Å ä Equilibrium?

7th Sino-Korean Symp June Conclusions ä Combined HEIS, XPS, EAM to study Ni-Al interface ä Ni-Al interface alloy forms in two stages at 30 o C ä 0-2ML Ni atoms move down into the surface and form a relatively dense NiAl compound ä 2-8 ML Outdiffusion of Al is reduced, Ni-rich alloy (Ni 3 Al) forms; eventually covered by Ni metal ä At 250 o C Ni atoms diffuse into the bulk - no surface compounds form ä More study is needed for abrupt interface formation

7th Sino-Korean Symp June HEIS: Deposition of Ni at 250 C ä Ni peak is now very broad ä Very little Ni at the surface ä Ni has diffused ~ 400 Å into the substrate ä Increased dechanneling in substrate

7th Sino-Korean Symp June XPS: Comparison of Calculated and Measured Intensities at 250 C ä XPS intensity vs Ni coverage ä Coverage from RBS ä Ni diffuses into substrate beyond range of XPS ä See no chemical shift for Ni 2p