Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Cu(In,Ga)Se 2 Thin film Solar Cells July 15, 2015July 15, 2015July 15,

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Presentation transcript:

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Cu(In,Ga)Se 2 Thin film Solar Cells July 15, 2015July 15, 2015July 15, 2015 Ref: Solar Cells: Materials, Manufacture and Operation by Tom Markvart and Luis Castaner

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 2 Materials Properties

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 3 Cu In(Al) Ga Se(S) Zn Cd 1, 3, 3, 6, 2 2

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 4 Heterjunction in Solar Cell Design

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Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 8 Cu(In,Ga)Se 2 Solar Cell Design

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 9 Major Design Problems

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Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 11

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 12 αphase: CuInSe 2 β: CuIn 3 Se 5 δ: high T sphalerite Cu y Se Addition of Na or Ga can widen the range of α region.

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 13

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 14 Defects Physics of Cu(In, Ga)Se 2

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Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 17 Improvement for High Efficiency

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 18

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 19 Formation of MoSe 2 During absorber deposition, a MoSe 2 film forms at the Mo surface. MoSe 2 is a layered semiconductor with p-type conduction, a band gap of 1.3eV. Because of the large band gap of the MoSe 2 compared with that of a standard Cu(In,Ga)Se 2 film, the MoSe 2 layer provides a low-recombinative back surface for the photohenerated minority carriers (electrons) in the absorber and at the same time provides a low-resistance contact for the majority carriers (holes). During absorber deposition, a MoSe 2 film forms at the Mo surface. MoSe 2 is a layered semiconductor with p-type conduction, a band gap of 1.3eV. Because of the large band gap of the MoSe 2 compared with that of a standard Cu(In,Ga)Se 2 film, the MoSe 2 layer provides a low-recombinative back surface for the photohenerated minority carriers (electrons) in the absorber and at the same time provides a low-resistance contact for the majority carriers (holes).

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 20

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 21 Co-evaporation Process

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 22

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 23

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 24 and go through H 2 S to obtain Cu(In,Ga)(S,Se) 2 Selenisation or Surfarization Process

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 25 Post-deposition Air Anneal

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 26 Two Prominent Features of Free Cu(In,Ga)Se 2 Surface

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 27 Arguments

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 28 Surface Defect Layer (SDL)

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 29 CBD of CdS

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