Integrated Circuit Design and Fabrication Dr. Jason D. Bakos.

Slides:

Advertisements

Similar presentations

Homework: CMOS Fabrication Digital IC Design : Martin Page Discuss briefly the relationships between an ion beam’s acceleration potential, the beam.

Advertisements

Lecture 0: Introduction

EE 445 INDUSTRIAL ELECTRONICS COURSE PRESENTATION Ahmed Hamidaddin

VLSI Design Lecture 2: Basic Fabrication Steps and Layout

EE4800 CMOS Digital IC Design & Analysis

CSCE 612: VLSI System Design Instructor: Jason D. Bakos.

Introduction to CMOS VLSI Design Lecture 0: Introduction

CSCE 190: Computing in the Modern World Dr. Jason D. Bakos

Elettronica D. AA Digital Integrated Circuits© Prentice Hall 1995 Manufacturing Process CMOS Manufacturing Process.

Trends in the Infrastructure of Computing: Processing, Storage, Bandwidth CSCE 190: Computing in the Modern World Dr. Jason D. Bakos.

Design and Implementation of VLSI Systems (EN0160) Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Sedra/Prentice Hall, Saint/McGrawHill,

CSCE 212 Introduction to Computer Architecture

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

Introduction to CMOS VLSI Design Lecture 0: Introduction

Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.

Device Fabrication Example

VLSI Design Introduction. Outline Introduction Silicon, pn-junctions and transistors A Brief History Operation of MOS Transistors CMOS circuits Fabrication.

Introduction Integrated circuits: many transistors on one chip.

Lecture 2. Logic Gates Prof. Taeweon Suh Computer Science Education Korea University ECM585 Special Topics in Computer Design.

Introduction to CMOS VLSI Design

CMOS Process Integration ECE/ChE 4752: Microelectronics Processing Laboratory Gary S. May March 25, 2004.

Z. Feng VLSI Design 1.1 VLSI Design MOSFET Zhuo Feng.

CS/EE 6710 CMOS Processing. N-type Transistor + - i electrons Vds +Vgs S G D.

Trends in the Infrastructure of Computing: Processing, Storage, Bandwidth CSCE 190: Computing in the Modern World Dr. Jason D. Bakos.

Lecture 2. Logic Gates Prof. Taeweon Suh Computer Science Education Korea University 2010 R&E Computer System Education & Research.

Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.

CP-416 VLSI System Design Lecture 1-A: Introduction Engr. Waqar Ahmad UET,Taxila.

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

Introduction to CMOS VLSI Design CMOS Fabrication and Layout Harris, 2004 Updated by Li Chen, 2010.

By: Joaquin Gabriels November 24 th,  Overview of CMOS  CMOS Fabrication Process Overview  CMOS Fabrication Process  Problems with Current CMOS.

SEMINAR PRESENTATION ON IC FABRICATION PROCESS PREPARED BY: GUIDED BY: VAIBHAV RAJPUT(12BEC102) Dr. USHA MEHTA SOURABH JAIN(12BEC098)

NanoFab Trainer Nick Reeder June 28, 2012.

Conductors – many electrons free to move

Microprocessors BY Sandy G.

CMOS VLSI Design Introduction

CMOS VLSI Fabrication.

Silicon Design Page 1 The Creation of a New Computer Chip.

Introduction to CMOS Transistor and Transistor Fundamental

CMOS FABRICATION.

Trends in the Infrastructure of Computing: Processing, Storage, Bandwidth CSCE 190: Computing in the Modern World Dr. Jason D. Bakos.

Introduction to CMOS VLSI Design Lecture 1: History & Layout Salman Zaffar Iqra University, Karachi Campus Spring 2012 Slides from D. Harris, Harvey Mudd.

EE141 Manufacturing 1 Chapter 2 Manufacturing Process and CMOS Circuit Layout 1 st rev. : March 7, nd rev. : April 10, 2003.

Microprocessor Design Process

2007/11/20 Paul C.-P. Chao Optoelectronic System and Control Lab., EE, NCTU P1 Copyright 2015 by Paul Chao, NCTU VLSI Lecture 0: Introduction Paul C.–P.

Winter 2016CISC101 - Prof. McLeod1 Today Take some of the “MAGIC” out of how computers work: How did the technology get to where it is today? –ENIAC movie.

Out Line of Discussion on VLSI Design Basics

Introduction to CMOS VLSI Design Lecture 0: Introduction.

1. Introduction. Diseño de Circuitos Digitales para Comunicaciones Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration.

VLSI Design Introduction. Outline Introduction Silicon, pn-junctions and transistors A Brief History Operation of MOS Transistors CMOS circuits Fabrication.

IC Manufactured Done by: Engineer Ahmad Haitham.

LTFY – Physics and Engineering

CMOS Fabrication CMOS transistors are fabricated on silicon wafer

MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.

Prof. Jang-Ung Park (박장웅)

Chapter 4 Processor Technology and Architecture

Chapter 1 & Chapter 3.

CSCE 212 Introduction to Computer Architecture

CSCE 190: Computing in the Modern World Dr. Jason D. Bakos

Lecture 19 OUTLINE The MOSFET: Structure and operation

Chapter 10: IC Technology

Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si

Manufacturing Process I

VLSI Lay-out Design.

V.Navaneethakrishnan Dept. of ECE, CCET

Chapter 10: IC Technology

VLSI Design Introduction

Chapter 10: IC Technology

Presentation transcript:

Integrated Circuit Design and Fabrication Dr. Jason D. Bakos

Mar 31, Elements

Mar 31, Semiconductors forward bias reverse bias P-N junction

Mar 31, MOSFETs body/bulk GROUND NMOSPMOS channel shorter length, faster transistor (dist. for electrons) body/bulk HIGH positive voltage (Vdd) negative voltage (rel. to body) (GND) current

Mar 31, Logic Gates invNAND2 NOR2 AY ABY ABY

Mar 31, IC Fabrication Inverter cross-section field oxide

Mar 31, Layout 3-input NAND

Mar 31, IC Fabrication Furnace used to oxidize ( C) Mask exposes photoresist to light, allowing removal HF acid etch piranha acid etch diffusion (gas) or ion implantation (electric field) HF acid etch

Mar 31, IC Fabrication Heavy doped poly is grown with gas in furnace (chemical vapor deposition) Masked used to pattern poly Poly is not affected by ion implantation

Mar 31, IC Fabrication Metal is sputtered (with vapor) and pla s ma etched from mask

Mar 31, Cell Library (Snap Together) Layout

Mar 31, Synthesized and P&R’ed MIPS Architecture

Mar 31, Feature Size Shrink minimum feature size… –Smaller L decreases carrier time and increases current –Therefore, W may also be reduced for fixed current –C g, C s, and C d are reduced –Transistor switches faster (~linear relationship)

Mar 31, Minimum Feature Size YearProcessorSpeedProcess 1982i MHz 1.5 m 1986i38616 – 40 MHz m 1989i MHz.8 m 1993Pentium MHz m 1995Pentium Pro MHz m 1997Pentium II MHz m 1999Pentium III450 – 1400 MHz m 2000Pentium 41.3 – 3.8 GHz m 2005Pentium D2.66 – 3.6 GHz m 2006Core – 3 GHz.065 m Upcoming milestones: 45 nm (Xeon 5400 Nov. 2007), 32 nm ( ), 22 nm ( ), 16 nm (2013)

Mar 31, Integration Density Trends (Moore’s Law) Pentium Core 2 Duo (2007) has ~300M transistors

Mar 31, Microarchitectural Parallelism Parallelism => perform multiple operations simultaneously –Instruction-level parallelism Execute multiple instructions at the same time Multiple issue Out-of-order execution Speculation –Chip multiprocessing Execute multiple threads at the same time on one CPU Execute multiple threads at the same time on multiple processors