Design and Implementation of VLSI Systems (EN1600) lecture05 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison.

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Presentation transcript:

Design and Implementation of VLSI Systems (EN1600) lecture05 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison Wesley]

Summary of Terminology body diffusion (n/p) source drain well tap contact metal track via polysilicon gate length/width gate oxide channel  All these structures must obey the dimensions and separation rules dictated by the process fabrication facility

Process design rules Design rules change from fab to fab Fab examples: IBM, Intel, TI, TSMC, UMC, MOSIS Design rules change according to the process technology

Lambda rules Feature Size: minimum distance between source and drain of transistor Feature size = 2λ 90nm feature size λ=45) According to Moore’s Law, how much does the feature size scale by every ~2 years?

Design rules and gate layout Lambda rules are conservative

More design rules

More and more design rules

Inverters with taps

Layout of a 3-input NAND gate

Stick diagrams No need to be drawn to scale

Pitch of routing tracks

Gate area estimation