Successor of the Transistor

Slides:



Advertisements
Similar presentations
MICROWAVE FET Microwave FET : operates in the microwave frequencies
Advertisements

A computer uses electric current to process information.
Logic Gates A logic gate is an elementary building block of a digital circuit Most logic gates have two inputs and one output At any given moment, every.
Slides based on Kewal Saluja
Metal Oxide Semiconductor Field Effect Transistors
Electronic memory & logic devices. Solid State Physics N N P P +- Transistors And diodes Logic gates Memory devices : Flip flops Flip Flop Flip Flop Flip.
Transistors and transistor circuits
CompSci Today’s Topics Technology for Computers A Technology Driven Field Upcoming Computer Architecture (Chapter 8) Reading (not in text)
GRAPHENE TRANSISTORS AND MEMORY. MOORE’S LAW THE PROBLEM 1. Reduction in saturation mode drain current. 2. Variation in Carrier velocity. 3. Modification.
Cutnell/Johnson Physics 8th edition
groups.yahoo.com/group/435_1
Experiment 6 -- Digital Switching
Single Electron Transistor
Moore’s Law No Moore? Presented by: Cutting Edge Homework Development.
POWER TRANSISTOR – MOSFET Parameter 2N6757 2N6792 VDS(max) (V)
Electric Circuits and Power Page 706. Ohm’s Law Resistance is equal to the voltage divided by the current. Resistance = Voltage Current Ohms ( ) = Volts.
3.1Introduction to CPU Central processing unit etched on silicon chip called microprocessor Contain tens of millions of tiny transistors Key components:
Electrical Fundamentals
Unit 7, Chapter 24 CPO Science Foundations of Physics.
Advanced Computing and Information Systems laboratory Device Variability Impact on Logic Gate Failure Rates Erin Taylor and José Fortes Department of Electrical.
Digital Integrated Circuits© Prentice Hall 1995 Introduction The Devices.
Chapter 22 Bipolar Transistors. 2 Objectives –After completing this chapter, the student should be able to: Describe how a transistor is constructed and.
Circuits Electric Circuit: a closed path along which charged particles move Electric Current: the rate at which a charge passes a given point in a circuit.
Static Electricity Electrical Charge: Is a concentration of electricity.
G.K.BHARAD INSTITUTE OF ENGINEERING DIVISION :D (C.E.) Roll Number :67 SUBJECT :PHYSICS SUBJECT CODE : Presentation By: Kartavya Parmar.
TECHNICAL SEMINAR ON TECHNOLOGIES AND DESIGNS FOR ELECTRONIC NANOCOMPUTERS PRESENTED BY : BIJAY KUMAR XESS ADMN NO : 4 I&E/2K.
SEMICONDUCTORS Triacs and Diacs.
CSIS CSIS Input AND from Transistors Illustrates basic use of IDL-800 Illustrates construction of gates Illustrates the “transistor bleed-through”
Memory and Storage Dr. Rebhi S. Baraka
Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.
CS 8421 Computing Systems, Dr. Hoganson Copyright © 2004, 2006 Dr. Ken Hoganson CS Class Will Start Momentarily… CS8421 Computing Systems.
By Will Peeden. Topics to be covered  What is nanotechnology?  Storing data in atoms  Using molecules for switches  Benefits  Challenges Ahead 
MOSFET Placing an insulating layer between the gate and the channel allows for a wider range of control (gate) voltages and further decreases the gate.
Electric Currents. Electric Current Electric current is the rate of flow of charge through a conductor: Unit of electric current: the ampere, A. 1 A =
Bi-CMOS Prakash B.
Electric Current. Ohm’s Law
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.
1.1 Introduction 1.2 Diode characteristics 1.3 Reverse Recovery characteristics 1.4 Power Diode Types- I)General Purpose ii)Fast Recovery Diode iii)Schottky.
Submitted To: Presented By : Dr R S Meena Shailendra Kumar Singh Mr Pankaj Shukla C.R. No : 07/126 Final B. Tech. (ECE) University College Of Engineering,
Electrical Characteristics of Logic Gates Gate Characteristics Last Mod: January 2008  Paul R. Godin.
EMT 112 / 4 ANALOGUE ELECTRONICS Self-Reading Power Transistor – BJT & MOSFET.
Chapter 18 Electric Currents. Why study electric current? Most electrical devices depend on electric current. For example… ◦ Light bulbs ◦ Heating elements.
Single Phase Induction Motor Speed Control. Introduction Single Phase Induction Motor Speed Control  Induction motors are.
Sarvajanik College of Engineering & Tech. Project By: Bhogayata Aastha Chamadiya Bushra Dixit Chaula Tandel Aayushi Guided By: Bhaumik Vaidya.
Unit D Section 2.0 Technologies can be used to transfer and control electricity.
Magnetic RAM Magnetoresistive Random Access Memory.
MOSFET V-I Characteristics Vijaylakshmi.B Lecturer, Dept of Instrumentation Tech Basaveswar Engg. College Bagalkot, Karnataka IUCEE-VLSI Design, Infosys,
Chapter 6 The Field Effect Transistor
Other diodes Electronic device and circuit Active learning assignments
Power Electronics. Power Electronics Why Germanium is not used for manufacturing Controlled Rectifiers.
MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.
Chapter 2 Power Electronic Devices
Recall Last Lecture Common collector Voltage gain and Current gain
Memristors By, Saransh Singh.
Metal Semiconductor Field Effect Transistors
Intro to Semiconductors and p-n junction devices
VLSI Design MOSFET Scaling and CMOS Latch Up
Week 9a OUTLINE MOSFET ID vs. VGS characteristic
LECTURE 1 (Ch. 1) INTRODUCTION
MOSFET POWERPOINT PRESENTATION BY:- POONAM SHARMA LECTURER ELECTRICAL
POWER SEMICONDUCTOR DEVICES OVERVIEW
PRESENTATION ON TRI GATE TRANSISTOR PREPARED BY: SANDEEP ( )
A computer uses electric current to process information.
Channel Length Modulation
Vocabulary Week 2 Advanced Class You will need 11 Index Cards
Technologies can be used to transfer and control electricity
Electric Circuits Chapter 35.
Presentation transcript:

Successor of the Transistor The Crossbar Latch:

Presenters: Joseph Adorno Brian McSkimming Edward Sniezak

Current Size of Transistors Advanced chip manufactures, which currently make processors with feature sizes of 90 nanometers, say they could probably reduce feature sizes to 32 nanometers.

Current Transistor Technology To turn the MOSFET on in saturation mode Vds must be greater then or equal to Vgs – Vt.

Problems with Current Transistors As transistor sizes decrease, very small gate lengths can cause transistors to leak electricity, devices to consume large amounts of power, data to corrupt, and device performance to vary.

Heat and Power problems Power dissipated in this resistance causes more heating of the junction, which further increases the junction temperature. If the heat produced by the transistor is more than the heat sink can dissipate, the thermal runaway occurs and the transistor will be destroyed.

Technology Roadmap

Hp’s Solution

The Crossbar-Latch

Crossbar-Latch Crossbar latches are not transistors, so they do not experience the, size, power, leakage or heat problems that transistors do. Therefore, chip makers can use large numbers of small latches, rather than transistors, to make chips more powerful.

Crossbar-Latch Crossbar latches are devices created between the two junctions where one tiny wire – currently 30 nanometers across, but could be decreased to as small as 2 to 3 nanometers across – crosses two other parallel wires at right angles. Each junction has a switch. The switch, a tunnel junction, consists of a single molecular layer sandwiched between two metal wires. The layer is normally an insulator. But if it is thin enough, charged particles can tunnel through the junction. If the junction’s resistance to such tunneling current is high, the switch is open; if it is low, the switch is closed. Applying a high or low voltage across the switch toggles the barrier between low and high resistance.

Crossbar-Latch The schematic illustrates the basic function of a latch in a crossbar latch The schematic of a actual crossbar latch with L being the signal line, and Ca and Cb are the two control lines

Crossbar-Latch According to “The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits”, HP lab researchers describe and demonstrate a microscopic device consisting of a single wire acting as a single line, crossed by two control lines with an electrically switchable molecular-scale junction where they intersect.

Crossbar-Latch By applying a sequence of voltage impulses to the control lines and using switches of opposite polarities, HP Lab researchers demonstrated that the crossbar latch can perform the NOT function which is essential for general computing operations.

Crossbar-Latch These are experimental demonstrations of a working crossbar latch. (a) The pulse sequence on the two control lines Ca and Cb to achieve the latch function. P1, P4, and P7 are the test pulses, P2 and P3 are open, P5 and P6 are closed.

Crossbar-Latch These are six trial runs varying only the input signal voltage. Input voltages of 0.3 and 0.4 volts latched correctly and inverted correctly with signal restoration while 0.2 volts failed to latch

Crossbar-Latch The advantage of using the crossbar latch, the two latch control lines may be driven by conventional circuitry outside the nanoscale circuit, which can be connected to a large number of logic signal lines. The disadvantage of using the crossbar latch is the limited lifetime (of 100 s of cycles) and switching speeds (.1kHz), both require improvement before reliable applications.

“Transistors will continue to be used for years to come with conventional silicon circuits, but crossbar latches could very well replace transistors in computers someday, just as transistors replaced vacuum tubes and vacuum tubes replaced electromagnetic relays before them.” - quote by Phil Kuekes, the holder of the patent for the crossbar latch.

- Nanotechnology and Science Bibliography - Nanotechnology and Science by: Mitin, Kochelap, and Stroscio - The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits. Journal of Applied Physics, Issue 97, Volume 3 - Researchers work on Transistor Successor IEEE article, May 2005