1 From Leading-Edge Advanced CMOS to Nanotechnology Devices EEL 4329 / EEL 5934 FALL 2006 InstructorProf. Scott Thompson 535 Engineering Bldg Office hours: M, W, F 7 th period (plus for more) MWF 8 th period / NEB 102

Fall 2006 ECS S.E. Thompson 2 What is Moore’s Law

Fall 2006 ECS S.E. Thompson 3 Moore’s Law According to Moore: ~ 0.7X linear scale factor 2X increase in density / 2 years Lower cost Higher performance (~30% / 2 years) At severe competitive disadvantage if don’t have newer technology Has been going on for 40 years and will continue “somewhat” for another decade 1 st signs of this being no longer valid is some markets

Fall 2006 ECS S.E. Thompson 4 Pentium ® Processors in: µm 0.6µm0.35µm µm0.35µm µm

Fall 2006 ECS S.E. Thompson 5 CLASS GOAL This class will expose the student to state of the art technology issues and industrial team problem solving. The class will provide links between the short-term topics, which will certainly be in production during the next 10 years such as nano- scale MOSFET, strained Si, high k gates to far- reaching topics, which are well ahead or off the main stream, offering high Potential. Some of these topics will include carbon nanotubes, molecular electronics and single electron devices for logic applications.

Fall 2006 ECS S.E. Thompson 6Relevance: At present silicon technology is “IT” however Moore’s Law will slow over the next decade and will have a profound effect on industry and university business and engineering jobs. The slowing should not be viewed as an end just a new phase in the $300B microelectronic industry were the rules of business change.

Fall 2006 ECS S.E. Thompson 7Relevance:

8 Gordon Moore on Moore’s Law and the future of Microelectronics Show Moore video –Interviews by Grove, Barret, Mead Discussion of key takeaways

Fall 2006 ECS S.E. Thompson 9Grading Grading: Homework/team project assignments and team project. Exams 85% 25% Exam 1: Sept 27 25% Exam 2: Nov 3 35% Final exam (Dec 12 10am – 12) 15% homework/real world semiconductor team research project Class divided into ~ 10 groups 5 – 10 min group periodic report out Final report Part peer evaluation

Fall 2006 ECS S.E. Thompson 10 Text book: Nanoelectronics and Information Technology Plus many handouts on CD ROM

Fall 2006 ECS S.E. Thompson 11Perquisite: Basic knowledge of semiconductor physics and devices (EEL 3396 or eq.). The class will be introductory and targeted towards students with a diverse background from electronics to material science. The class will be designed to introduce CMOS, non classical CMOS, and post CMOS device concepts without a quantum mechanical background.

Fall 2006 ECS S.E. Thompson 12 Course Outline Week 1-2: Moore’s Law and microelectronic industry trends Week 3: Logic device: State of the Art for a Si MOSFET Week 4: Requirements for a logic device replacement Week 5-6: CMOS devices limits: quantum-statistical Week 7-11 Post CMOS logic device - Multi-Gate CMOS - Carbon nanotubes - High level overview of Quantum Transport Devices - Single electron devices for Logic applications - Spintronics Midterm exam: Oct 20th Week Memory devices DRAM, ferroelectric, magneto resistive, and phase change RAM Week 16: December 8th and 10th Final exam: when scheduled by college

Fall 2006 ECS S.E. Thompson 13 Course Material Week : Introduction class / Video –1.2: short 300mm fab vide: Moore on Moore’s law –1.3: Intel’s view on nanotechnology –2.1: IBM view on nanotechnology –2.2 Taur/Isaac papers –2.3 State of the art: MOSFET –3.1: Holiday –3.2: How work report out –3.3: How strain works / band structure and strain –4-6: Requirements and limits of devices High level overview to put the material in perspective Equations and mathematics

Fall 2006 ECS S.E. Thompson 14 CLASS / Team Project (assigned Mid Year) Compare post CMOS replacement device options to the MOSFET (most successful device technology) Which if any post CMOS device options should the microelectronics focus on as a MOSFET replacement? Recommendation should be based – Historical and projected future MOSFET trends. – On quantum, statistical mechanics, and device limits. – Potential advantage of post CMOS device option. –Class homework will help shape project – Suggestions: Start with a good literature search. Use excellent free service of electronic journals on-line. Use Mathlab for calculations and graphs. Group divided into 10 Teams

Fall 2006 ECS S.E. Thompson 15 Homework 1: Why has GaAs or 3-5 devices not “taken off” Include –Early history of GaAs—find interesting quotes (see who can find the best quotes) on GaAs potential –What markets is GaAs used today –What is it not replaceing CMOS Expectation –Present 6-7 ppt slides for a “professional” presentation to class –~1 page report with references –Due Sep 11 th Can pick your own groups ~4-6 people/group n+ Sourc e L GATE T OX Drai n W

Fall 2006 ECS S.E. Thompson 16 Course Material (papers provided on CD) Week 1: Silicon MOSFET – Novel materials and Alternative concepts Ch-13 text book pages –(Skip operation of MOS capacitor / High K deposition Isaac paper: The Future of CMOS Taur CMOS design near the limit of scaling EEtimes nano technology article Week 2: Denard: Design of ion implanted MOSFET Sustaining Moore’s Law and the US Economy Week 3: Intel 90nm Strained silicon

Fall 2006 ECS S.E. Thompson 17 Course Material (papers on CD) Week 4-6: Miendl- low power microelectronics Limits to a binary switch Book pages (skip biological system) Week 7-11: Book chapters 19, 16 Single electron devices and their application Spintronics: a spin based electronics vision for the future Week 12-16: Book chapters Introduction to flash memory

Fall 2006 ECS S.E. Thompson 18Other Class attendance required. Class attendance/participation used to decide “close” grades (i.e. A or B+?) No make-up exam/homework unless very good reason. See me. Will be handled on case by case basis Student with disability: Students requesting classroom accommodation must first register with the Dean of Student Office. The Dean of Students Office will provide documentation to the student who must then provide this documentation to the instructor when requesting accommodations. Expect on time to class. No cell phones University honesty policy