Ron Schrimpf Department of Electrical Engineering and Computer Science Vanderbilt Radiation Effects Research Institute for Space and Defense Electronics Ron Schrimpf Department of Electrical Engineering and Computer Science

Vanderbilt University l Located in Nashville, TN l ~11,000 students l Private l Engineering, Arts & Sciences, Medicine, Law, Business, Education, Music…

Vanderbilt Radiation Effects Program l 25 graduate students l 5 undergraduate students l Open access l Basic research and support of ISDE engineering tasks l Training ground for rad-effects engineers l l 14 full time engineers l l 2 support staff l l ITAR compliant l l Support specific radiation effects engineering needs in government and industry Radiation Effects Research (RER) Group Institute for Space and Defense Electronics (ISDE) World’s largest university-based radiation effects program l l 10 faculty with extensive expertise in radiation-effects l l Beowulf supercomputing cluster l l Custom software codes l l EDA tools from multiple commercial vendors l l Multi-million $ aggregate annual funding l l Test and characterization capabilities and partnerships

What is ISDE ? Founded January 1, 2003 as a resource to support radiation effects analysis and rad-hard design needs Brings academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: l Government and industry radiation-effects resource Modeling and simulation Design support: rad models, hardening by design Technology support: assessment, characterization l Flexible staffing driven by project needs 10 Faculty 25 Graduate students 14 Professional, non-tenured engineering staff

ISDE Capabilities l Characterize radiation and reliability responses of technologies l Develop and maintain device and circuit models and software tools l Apply simulation tools in support of design and characterization l Assist in IC and system design activities l Support development of test plans and standards l Interpret radiation and reliability test results l Assess capabilities and limitations of new technologies Deep submicron (scaling, new materials, new structures) Opto, nano, bio l Provide training, documentation and instructional materials l Serve as a radiation effects “SWAT” team

Sampling of Current Projects U.S. Navy Trident II Life Extension (Draper prime) DTRA Radiation Hardened Microelectronics DARPA/DTRA Radiation Hardened by Design (Boeing prime) NASA Electronic Parts & Packaging Program (NASA/GSFC) NASA Extreme Environment Electronics (Ga Tech prime) CREME Monte Carlo (NASA MSFC/RHESE) Aging of Electronics (U.S. Navy DTO/Lockheed-Martin) U.S. Air Force Minuteman Technology Readiness BAE SEU-Hardened SRAMs (BAE prime) SEE Charge Collection Signatures at 90nm (and below) (ANT/IBM prime) Virtual Irradiation Simulator Development (Air Force/AEDC/PKP) Integrated Multi-scale Modeling of Molecular Computing Devices (DOE) Substrate Charge Collection Studies (MEMC) CFDRC TCAD Tool Development (DTRA SBIR and NASA STTR) Lynguent Compact Model Development (DTRA SBIR) SEU Analysis (Medtronic) GaN HEMT/amplifier simulation (Lockheed Martin) Radiation Effects on Emerging Electronic Materials and Devices (AFOSR/MURI) Design for Reliability Initiative for Future Technologies (AFOSR/MURI through UCSB) DTRA Basis Research Efforts (three 6-1 grants)

Can we use high-performance computing to analyze radiation effects? l l VAnderbilt Multi-Processor Integrated Research Engine (VAMPIRE) Beowulf cluster consisting of >1500 processors Heterogeneous processors (Pentiums, Opterons, PowerPCs)

Simulation Capabilities Defect Models VASP (DFT code) Energy Deposition MRED (Geant4) MCNPX Process: FLOOPS (Synopsys) Device: Dessis (ISE/Synopsys) CFD-ACE+ (CFDRC) FLOODS (U of FL) Circuit: SPECTRE (Cadence) HSPICE (Synopsys) ELDO (Mentor) IC Layout & Verification Cadence Synopsys Compact Model Parameter Extraction: Cadence Pro+ (Cadence) Aurora (Synopsys) ISE Extract (ISE)

Process Design Kit Development and Enhancement B E C D S G Technology Characterization: TCAD Simulations Radiation Enabled Behavioral/Degraded Models Design, Simulation, and Topology Hardening Layout Hardening Techniques Final Radiation Hardened Design RH - PDK Radiation Test Data Model Development and Calibration Custom Test Chip Design

Physically Based Simulation of Radiation Events l 63-MeV proton incident on a SiGe HBT l Iso-charge surfaces following a nuclear reaction

Motion of an ion thru Si

Radiation Effects on Emerging Electronic Materials and Devices: Motivation l More changes in IC technology and materials in past five years than previous forty years SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices… l Future space and defense systems require identification and understanding of radiation effects to develop hardening approaches for advanced technologies Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation… New Materials Device Structure Device ResponseCircuit Response IC Design Energy Deposition Defect Models Si 1-x Ge x

Technical Approach l Experimental analysis of radiation effects in emerging technologies through partnerships with semiconductor manufacturers l Identification of critical radiation effects mechanisms and challenges through first-principles modeling l Simulation of new radiation-effects mechanisms using custom Monte-Carlo energy deposition codes, device simulation tools, and high performance computing

Radiation Effects in Emerging Electronic Materials and Devices: Results Radiation Response of New Materials Single Events in New Technologies Localized Radiation Damage RADSAFE—First multi-scale Monte Carlo single-event/rate- prediction tool Passivation/metallization found to dominate SEE response in some hardened technologies Excellent agreement with on-orbit data; conventional rate- prediction methods underestimate rate by orders of magnitude Incorporation of new materials dramatically impacts radiation response HfO 2 -based dielectrics and emerging high-k materials tested; HfSiON is very promising Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) offers possibility for single-event hardening New device technologies strongly impact single-event response and TID leakage current SiGe HBTs, strained Si CMOS, ultra-small bulk CMOS exhibit complicated charge collection mechanisms Floating-body SOI found to exhibit high radiation-induced off-state leakage due to tunneling Impact of New Device Structures First-principles evidence of micro-melting in small devices Displacement damage found to depend on substrate doping type Monte-Carlo simulation tool for non-ionizing energy loss developed

Predict error rate Radiation Environment Models Radiation Transport Models Device Single Event Effects Circuit Single Event Effects System Single Event Effects Advanced Radiation Effects Analysis Automated Connection Between Models Accelerator-Based Experiments

Summary l Vanderbilt has the largest university-based program focused on radiation effects in electronics. l Comprehensive approach from basic particle interactions to large-scale circuit and system performance. l Collaboration with multiple organizations.