Full –Band Particle-Based Analysis of Device Scaling For 3D Tri-gate FETs By P. Chiney Electrical and Computer Engineering Department, Illinois Institute.

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Presentation transcript:

Full –Band Particle-Based Analysis of Device Scaling For 3D Tri-gate FETs By P. Chiney Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL M. Saraniti, J. Branlard, Illinois Institute of Technology, Chicago, IL S. Aboud, Worcester Polytechnic Institute, Worcester, MA S. Goodnick, Arizona State University, Tempe, AZ 85287

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Outline I. Full-band Particle-based Method II. The Tri-gate devices III. Device Simulation IV. Scaling the Tri-gate V. Frequency Analysis VI. Future Work

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs A simplified flowchart of a particle- based semiconductor simulation technique Full-band representation of the Energy- Momentum relation for Si Full-band Particle-based simulation

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Hybrid Full-Band EMC/CMC simulator Full-band representation of electronic dispersion relation for first valence band Method used in this work- Hybrid CMC/EMC CMC -Regions where total number of scattering events is high --Saves time EMC – Regions where total number of scattering events is low -Saves space

Multiple gate devices: Tri-gate FETs Promising candidate for future nanometer MOSFET applications Possess high gate-channel controllability Impressive scalability over planar structures Impressive scalability over planar structures Achieve high drive currents Achieve high drive currents * ITRS`2001 published data F.L. Yang et al. IEDM Tech. Dig. p.255, 2002

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Device Layout of the p-FET  H si =50 nm, W si =25 nm, L g =25 nm, doping  129 x 65 x 33 inhomogeneous grid  260,000 particles P-FETS exhibit record fast transistor switching speed (0.43ps)* P-FETS exhibit record fast transistor switching speed (0.43ps)* * ITRS`2001 published data

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Device Simulation Current-voltage characteristics Average energy and velocity V g =-1.55 V, V d =-1.0 V  Velocity overshoot  260,000 particles  24 CPU hrs/ps  4 ps/bias point

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Movie

Scaling effects Increase in the channel width -  DIBL(Drain Induced Barrier Lowering) increases Calculation of DIBL

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Scaling effects Decrease in the channel width - Decrease in the channel width -  Threshold voltage decreases Calculation of Threshold voltage

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Scaling effects (contd.) Decrease in the channel length-  Increase in peak energy  Increase in electric field

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Dynamic Analysis- To study the effects of scaling the channel width on the dynamic response. -- Sinusoidal excitation method V ds = V V gs = V V gs = V Perturbations are applied successively to the gate and drain electrodes at different frequencies

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Frequency Analysis-Sinusoidal excitation method Applying Sinusoidal excitation on the drain electrode Applying Sinusoidal excitation on the gate electrode Gain (G v )

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Dynamic Analysis Voltage Gain - Cut-off frequency (G v =1) : Channel width 25 nm = 930 Hz Channel width 50 nm = 950 Hz --No significant change in cut-off frequency with decrease in the channel width

Full-band Particle-based Analysis of Device Scaling For 3D Tri-gate FETs Current and Future Work Further scaling of Tri-gate FETs Further scaling of Tri-gate FETs -- Scaling the height of the channel -- Scaling the height of the channel Goal- Propose scaling rules/model for tri-gate FETs Goal- Propose scaling rules/model for tri-gate FETs Include Quantum correction Include Quantum correction Account for degeneracy Account for degeneracy Thank You! Thank You!