Flash Memory EECS 277A Fall 2008 Jesse Liang #68686895.

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Presentation transcript:

Flash Memory EECS 277A Fall 2008 Jesse Liang #

What is Flash Memory? A type of Non-Volatile memory A specific type of EEPROM (Electrically Erasable Read Only Programmable Memory) Solid-State Memory What is the big deal? It can be read/written and it doesn’t need POWER for data retention. It’s fast. It’s durable

Applications There’s many, many, more!

Device Structure Similar to MOSFET Structure Added Floating Gate (FG) between Control Gate (CG) and inversion layer FG surrounded by insulators FG traps electrons (~50 years) CG is same as MOSFET gate Charged FG disrupts / affects inversion layer Current flows from the drain to source via inversion layer

Read Function Logic state determined by current flow amount –Let I D be the current flow in a normal MOSFET –Let I DF be the current flow in a flash transistor If I DF ≈ I D  LOGIC 1 If I DF < I D (significantly less than)  LOGIC 0 Flash Memory senses the amount of current flowing through its inversion layer as a means of logic state determination.

Write Function – Logic 0 Electrons are injected into the FG via hot-electron injection Charged FG partially cancels the CG’s E-field V t is modified, changing current flow (less) Reduced current flow in inversion layer - logic 0

Write Function – Logic 1 Electrons are tunneled out of the FG FG no longer partially cancels the CG’s E-field V t is back to default Current flow in inversion layer returns to normal - logic 1

Lifespan Hot electron injection or tunneling results in device deterioration Electrons have a probability of becoming trapped in oxide layer, electron traps Trapped electrons in oxide disrupt V t Flash Memory can “wear out” Between 1,000 10,000 and up to 100,000 write cycles

Major Players in Flash Market Samsung Toshiba AMD (Spansion) Intel & Micron  IMI Flash Technologies Hynix SST ST Microelectronics Sharp

Motivations Projected to be a $20 billion market by 2010 All handheld / mobile products rely on Flash memory Optimists predict NAND Flash will replace CD/DVD NAND Flash prices continue to fall Storage densities are following Moore’s Law

The End (not really)

References for Flash Memory Diagram on slide Fundamentals of Modern VLSI Devices. TUAR, Yuan. NING H., Tak pg , pg. 85