DDR MEMORY  NEW TCEHNOLOGY  BANDWIDTH  SREVERS, WORKSTATION  NEXT GENERATION OF SDRAM.

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Presentation transcript:

DDR MEMORY  NEW TCEHNOLOGY  BANDWIDTH  SREVERS, WORKSTATION  NEXT GENERATION OF SDRAM

DDR2 MEMORY  FASTER SPEEDS  HIGHER DATA BANDWITHS  LOWER POWER CONSUMPTION  ENHANCED THERMAL PERFORMANCE  DESKTOPS, SERVERS, NOTEBOOKS

PERFORMANCE OF MEMORY SPEED = WIDTH * FREQUENCY SPEED = WIDTH * FREQUENCY SPEED = MEMORY PERFORMANCE ( Mb/s) WIDTH = MEMORY BUS (bits) FREQUENCY = FREQUENCY OF DATA (MHz)

DDR2 versus DDR Modules FeatureDDRDDR2DDR2 Advantage Memory Package TSOP and BGAFBGA only Higher speed and improved electrical and thermal performance On Die Termination Memory signal terminated on motherboard In chip Terminates memory signal in every chip to improve signal and integrity Voltage2.5 volts1.8 VoltsLower power consumption and heat dissipation Memory Chip Size 128Mb - 1Gb 256Mb- 4Gb* 1Gb chip -> 2GB DIMM (no chip stacking) 4Gb chip -> 8GB DIMM (no chip stacking) Frequency200, 266, 333, 400 Mhz 400, 533, 667 Speed above 400MHz Module Bandwidth Up to 6.4GB/s Dual Channel Up to 10.6GB/s Highest memory performance

Next Generation of Memory  DDR: supply voltage VDD = 2.5 V V  DDR-2: supply voltage VDD = 1.8 V V  DDR-3: supply voltage VDD not yet standardized