Basic Bipolar Process Description Bipolar Process Flow –Vertical npn –Lateral pnp –JFET –Prepared by Randy Geiger, September 2001.

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Presentation transcript:

Basic Bipolar Process Description Bipolar Process Flow –Vertical npn –Lateral pnp –JFET –Prepared by Randy Geiger, September 2001

Bipolar Process Flow P-substrate n+ buried collector implant n-epitaxy Buried collector Isolation Diffusionp-base diffusion n+ emitter diffusion Oxidation Contact Openings Metalization Bipolar Process Flow

n+ buried collector implant Buried collector Base Emitter Collector Vertical npn BJT

B E C Lateral pnp Modification E C B Lateral pnp BJT

B E C JFET Modification S D G

BJT Layout and Area Issues BJT Layout BJT Area Requirements Comparison of Area between MOS and Bipolar Processes

NOT TO SCALE Note: 24 required Between p-base and isolation diffusion

Note: 24 required Between p-base and isolation diffusion Note: Not to vertical Scale 58

Note: 24 required Between p-base and isolation diffusion Note: Not to vertical Scale 58

Note: Not to vertical Scale

Note: Not to vertical Scale Bounding Area =

Bounding Area = 208  Comparison with Area for n-channel MOSFET in Bulk CMOS

Bounding Area = 168  Active Area = 6 2 Minimum-Sized MOSFET

Note: Not to vertical Scale MOSFET BJT

Area Comparison between BJT and MOSFET BJT Area = n-channel MOSFET Area = Area Ratio25:1

That’s all folks!