University of Technology Graz - Institute of Solid State Physics 1 Harald Etschmaier LB-films and SAMs in OTFTs Langmuir-Blodgett films and chemically reactive Self Assembled Monolayers in Organic Thin film Transistors Harald Etschmaier IF – Seminar, Graz,
University of Technology Graz - Institute of Solid State Physics 2 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Outline Part I: Langmuir Blodgett films –The Method –Characterization –Modified OTFTs Part II: Chemically Reactive SAMs –Theory –Setup –Measurements and results
University of Technology Graz - Institute of Solid State Physics 3 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Motivation LB-films form a very regular structure on the substrate and allow a easy control of the surface wettability. We hope that these properties can yield a better grain formation when growing pentacene on top and hence result in a better mobility in the transistor. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers, Sirringhaus et al., Nature Vol 401, 1999 Improved organic thin-film transistor performance using novel self-assembled monolayers, McDowell, Hill, APL 88, 2006 Organic Electronics, Hagen Klauk, Wiley-VCH Verlag (2006)
University of Technology Graz - Institute of Solid State Physics 4 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Idea of the LB-film Principle copied from nature Cell membrane is stabilized by surrounding water
University of Technology Graz - Institute of Solid State Physics 5 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs The technical approach Binks, B.P. Adv. Colloid Interface Sci., 34 (1991) 343 Apply non-soluble molecules on water surface transfer one by one monolayer to substrate by dipping and removing
University of Technology Graz - Institute of Solid State Physics 6 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs The Langmuir Blodgett Trough Force Sensor is measuring the surface pressure (=surface tension of pure water – surface tension of water with floating molecules)
University of Technology Graz - Institute of Solid State Physics 7 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs The molecule Pentacosa-10,12-diynoic acid so-called diacetylene Polymerization upon exposure to UV stabilizes layer Single Monolayer transistors have been build from these films Monolayer Transistor Using a Highly Ordered Conjugated Polymer as the Channel, Scott et al., Nano letter Vol.6, 2006
University of Technology Graz - Institute of Solid State Physics 8 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Layer formation Diacetylene is dissolved in chloroform and dropped on the surface The barrier compresses the molecules to a solid state liquid gaseous solid Multiple layers
University of Technology Graz - Institute of Solid State Physics 9 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Layer transfer Adam, G.; Läuger, P.; Stark, G.; Physikalische Chemie und Biophysik wettability of sample changes for each dipping in theory any number of monolayers possible
University of Technology Graz - Institute of Solid State Physics 10 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Sample preparation SiO x substrates with different pretreatments: 1.Oxygen plasma etched hydrophilic 2.HDMS layer hydrophobic 3.Perflourinated SAM super hydrophobic Optional polymerization on water surface or directly on substrate Cd-Ions in the head group of the diacetylene to stabilize the layer and improve XRR-contrast
University of Technology Graz - Institute of Solid State Physics 11 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Recorded area transfer out in out Decrease of surface area gives a good feedback for layer deposition
University of Technology Graz - Institute of Solid State Physics 12 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs XRR - Different layer thickness Some kind of wetting layer is always the same The Bragg Peak develops with increasing number of LB layers DI Heinz-Georg Flesch
University of Technology Graz - Institute of Solid State Physics 13 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs XRR – illuminated and not illuminated -Smaller and broader Bragg Peak for not polymerized sample (worse multilayer stacking) -Minimum shifts upon polymerization, but stays the same independent from number of LB layers DI Heinz-Georg Flesch
University of Technology Graz - Institute of Solid State Physics 14 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs XRR D-spacing of layers approximately 4.8 nm (one repeated unit consists of two LB layers)
University of Technology Graz - Institute of Solid State Physics 15 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs AFM Center of sample (LB-film) Edge of sample (SIOx substrate) AFM can proof that something was deposited DI Heinz-Georg Flesch
University of Technology Graz - Institute of Solid State Physics 16 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs AFM ~1,25nm ~2nm AFM data gives no clear result for the layer thickness DI Heinz-Georg Flesch
University of Technology Graz - Institute of Solid State Physics 17 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Pentacene Deposition No LB-film1 monolayer diacetylene Dr. Anja Haase Higher nucleation density, three dimensional grains Better homogeneity in depth and a lower density of defects Disordered solid made of dendritic grains High concentration of defects, mainly located at grain boundaries Kalb et al. / Synthetic Metals 146 (2004)
University of Technology Graz - Institute of Solid State Physics 18 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Light Microscope Pentacene on LB-film Pentacene on SiO x SiO x Pentacene on SiO x
University of Technology Graz - Institute of Solid State Physics 19 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs FETs No improvement achieved so far – Further experiments in process!
University of Technology Graz - Institute of Solid State Physics 20 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Part II Time resolved measurements of chemically reactive SAMs
University of Technology Graz - Institute of Solid State Physics 21 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Setup Application of CSTS SAM on SiOx substrate Spin coating of P3HT Evaporation of Au contacts Electrical characterization P3HT Pacher et al., submitted
University of Technology Graz - Institute of Solid State Physics 22 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Doping and Dedoping mechanism Pacher et al., submitted Shifts the threshold voltage by up to 60V to negative values
University of Technology Graz - Institute of Solid State Physics 23 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Creating the gas mixture Argon Ammonia Flow meters Valves Measuring cell
University of Technology Graz - Institute of Solid State Physics 24 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs The measuring cell Potassic-bromide windows Three-way valves Spring contacts Source Drain Gate
University of Technology Graz - Institute of Solid State Physics 25 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Results – threshold voltage
University of Technology Graz - Institute of Solid State Physics 26 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Results – threshold voltage
University of Technology Graz - Institute of Solid State Physics 27 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Results - mobility
University of Technology Graz - Institute of Solid State Physics 28 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Conclusions from preliminary experiments Ammonia increases hysteresis: Molecules diffuse into bulk and cause additional trap states Ammonia decreases mobility: Additional scattering centres The threshold voltage drops irreversibly upon exposure to Ammonia by. Quantity is dependent on time and concentration. further experiments
University of Technology Graz - Institute of Solid State Physics 29 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Additional observations After reaction with ammonia FETs are very sensitive to light: Turn-on-voltage shifts by up to 70V upon illumination.
University of Technology Graz - Institute of Solid State Physics 30 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Additional observations Measurements influence device characteristics
University of Technology Graz - Institute of Solid State Physics 31 Harald Etschmaier Seminar - Graz, LB-films and SAMs in OTFTs Co-Workers FETs –Peter Pacher, Andrej Golubkov, Egbert Zojer SAMs –Alexandra Lex, Gregor Trimmel, Christian Slugovc AFM, XRR –Heinz Georg Flesch, Roland Resel, Anja Haase LB-films –Martin Weis, Julius Cirak