Chihou Lee, Terry Yao, Alain Mangan, Kenneth Yau, Miles Copeland*, Sorin Voinigescu University of Toronto - Edward S. Rogers, Sr. Dept. of Electrical &

Slides:



Advertisements
Similar presentations
Design and Scaling of SiGe BiCMOS VCOs Above 100GHz
Advertisements

Lecturer Michael S. McCorquodale Authors Michael S. McCorquodale, Mei Kim Ding, and Richard B. Brown Study and Simulation of CMOS LC Oscillator Phase Noise.
High efficiency Power amplifier design for mm-Wave
COMMUNICATION SYSTEM EEEB453 Chapter 3 (III) ANGLE MODULATION
An X-Band Low Noise InP-HBT VCO
Institut für Theoretische Elektrotechnik Dipl.-Ing. Jan Bremer Large Signal Modeling of Inversion-Mode MOS Varactors in VCOs MOS-AK Meeting April.
RMO4C-2 A Low-Noise 40-GS/s Continuous-Time Bandpass ΔΣ ADC Centered at 2 GHz Theo Chalvatzis and Sorin P. Voinigescu The Edward S. Rogers Sr. Department.
1/42 Changkun Park Title Dual mode RF CMOS Power Amplifier with transformer for polar transmitters March. 26, 2007 Changkun Park Wave Embedded Integrated.
A Zero-IF 60GHz Transceiver in 65nm CMOS with > 3.5Gb/s Links
Principles of Electronic Communication Systems
Chapter 6 FM Circuits.
60-GHz PA and LNA in 90-nm RF-CMOS
A Dynamic GHz-Band Switching Technique for RF CMOS VCO
ECE1352F University of Toronto 1 60 GHz Radio Circuit Blocks 60 GHz Radio Circuit Blocks Analog Integrated Circuit Design ECE1352F Theodoros Chalvatzis.
University of Toronto (TH2B - 01) 65-GHz Doppler Sensor with On-Chip Antenna in 0.18µm SiGe BiCMOS Terry Yao, Lamia Tchoketch-Kebir, Olga Yuryevich, Michael.
1 Low Phase Noise Oscillators for MEMS inductors Sofia Vatti Christos Papavassiliou.
Departement Elektriese, Elektroniese & Rekenaar-Ingenieurswese Department of Electrical, Electronic & Computer Engineering Kgoro ya Merero ya Mohlagase,
Worcester Polytechnic Institute
A Wideband CMOS Current-Mode Operational Amplifier and Its Use for Band-Pass Filter Realization Mustafa Altun *, Hakan Kuntman * * Istanbul Technical University,
A 77-79GHz Doppler Radar Transceiver in Silicon
CSICS 26 Oct A 49-Gb/s, 7-Tap Transversal Filter in 0.18  m SiGe BiCMOS for Backplane Equalization Altan Hazneci and Sorin Voinigescu Edward S.
Phase-Locked Loop Design S emiconducto r S imulation L aboratory Phase-locked loops: Building blocks in receivers and other communication electronics Main.
Design of LNA at 2.4 GHz Using 0.25 µm Technology
Seoul National University CMOS for Power Device CMOS for Power Device 전파공학 연구실 노 영 우 Microwave Device Term Project.
New MMIC-based Millimeter-wave Power Source Chau-Ching Chiong, Ping-Chen Huang, Yuh-Jing Huang, Ming-Tang Chen (ASIAA), Shou-Hsien Weng, Ho-Yeh Chang (NCUEE),
Slide: 1International Conference on Electronics, Circuits, and Systems 2010 Department of Electrical and Computer Engineering University of New Mexico.
1 A 56 – 65 GHz Injection-Locked Frequency Tripler With Quadrature Outputs in 90-nm CMOS Chan, W.L.; Long, J.R.; Solid-State Circuits, IEEE Journal of.
RF System On Chip Quadrature VCO Comparison1/12 Fortià Vila VergésUniversitat Politecnica de Catalunya E.T.S.E.T.B. Fortià Vila Vergés 19th June 2007 Introduction.
A 30-GS/sec Track and Hold Amplifier in 0.13-µm CMOS Technology
S. -L. Jang, Senior Member, IEEE, S. -H. Huang, C. -F. Lee, and M. -H
Microwave Traveling Wave Amplifiers and Distributed Oscillators ICs in Industry Standard Silicon CMOS Kalyan Bhattacharyya Supervisors: Drs. J. Mukherjee.
October 31st, 2005CSICS Presentation1 A 1-Tap 40-Gbps Decision Feedback Equalizer in a  m SiGe BiCMOS Technology Adesh Garg, Anthony Chan Carusone.
ADS Design Guide.
A CMOS VCO with 2GHz tuning range for wideband applications Speaker : Shih-Yi Huang.
A New RF CMOS Gilbert Mixer With Improved Noise Figure and Linearity Yoon, J.; Kim, H.; Park, C.; Yang, J.; Song, H.; Lee, S.; Kim, B.; Microwave Theory.
18/10/20151 Calibration of Input-Matching and its Center Frequency for an Inductively Degenerated Low Noise Amplifier Laboratory of Electronics and Information.
ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications Nick Krajewski CMPE /16/2005.
V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom,
A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz Radio
8GHz, lV, High Linearity, Low Power CMOS Active Mixer Farsheed Mahrnoudi and C. Andre T. Salama The Edward S. Rogers Sr. Department of Electrical & Computer.
McGraw-Hill © 2008 The McGraw-Hill Companies, Inc. All rights reserved. Principles of Electronic Communication Systems FM Circuits.
Amplitude and Phase Noise in Nano-scale RF Circuits
A 2-GHz Direct Sampling ΔΣ Tunable Receiver with 40-GHz Sampling Clock and on-chip PLL T. Chalvatzis 1, T. O. Dickson 1,2 and S. P. Voinigescu 1 1 University.
Injection Locked Oscillators Optoelectronic Applications E. Shumakher, J. Lasri, B. Sheinman, G. Eisenstein, D. Ritter Electrical Engineering Dept. TECHNION.
A GHz Fourth-Harmonic Voltage-Controlled Oscillator in 130nm SiGe BiCMOS Technology Yang Lin and David E. Kotecki Electrical and Computer Engineering.
A NEW METHOD TO STABILIZE HIGH FREQUENCY HIGH GAIN CMOS LNA RF Communications Systems-on-chip Primavera 2007 Pierpaolo Passarelli.
RFIC – Atlanta June 15-17, 2008 RTU1A-5 A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology.
MMIC design activities at ASIAA Chau-Ching Chiong, Ping-Chen Huang, Yuh-Jing Huang, Ming-Tang Chen (ASIAA), Ho-Yeh Chang (NCUEE), Ping-Cheng Huang, Che-Chung.
An Oscillator Design Based on Bi-CMOS Differential Amplifier Using Standard SiGe Process Cher-Shiung Tsai, Ming-Hsin Lin, Ping-Feng Wu, Chang-Yu Li, Yu-Nan.
A Tail Current-Shaping Technique to Reduce Phase Noise in LC VCOs 指導教授 : 林志明 教授 學 生 : 劉彥均 IEEE 2005CUSTOM INTEGRATED CIRCUITS CONFERENCE Babak Soltanian.
RFIC – Atlanta June 15-17, 2008 RMO1C-3 An ultra low power LNA with 15dB gain and 4.4db NF in 90nm CMOS process for 60 GHz phase array radio Emanuel Cohen.
1 1.3 V low close-in phase noise NMOS LC-VCO with parallel PMOS transistors Moon, H.; Nam, I.; Electronics Letters Volume 44, Issue 11, May Page(s):676.
Tod Dickson University of Toronto June 9, 2005
© Sean Nicolson, BCTM 2006 © Sean Nicolson, 2007 A 2.5V, 77-GHz, Automotive Radar Chipset Sean T. Nicolson 1, Keith A. Tang 1, Kenneth H.K. Yau 1, Pascal.
Timothy O. Dickson and Sorin P. Voinigescu Edward S. Rogers, Sr. Dept of Electrical and Computer Engineering University of Toronto CSICS November 15, 2006.
A 20/30 Gbps CMOS Backplane Driver with Digital Pre-emphasis Paul Westergaard, Timothy Dickson, and Sorin Voinigescu University of Toronto Canada.
Ekaterina Laskin, Sean T. Nicolson, Sorin P. Voinigescu
CommunicationElectronics Principles & Applications Chapter 5 Frequency Modulation Circuits.
Design and Frequency Scaling of CMOS VCOs Keith Tang Sorin P. Voinigescu June 9 th, 2006.
Mackenzie Cook Mohamed Khelifi Jonathon Lee Meshegna Shumye Supervisors: John W.M. Rogers, Calvin Plett 1.
CMOS 2-Stage OP AMP 설계 DARK HORSE 이 용 원 홍 길 선
December 1997 Circuit Analysis Examples 걼 Hairpin Edge Coupled Filter 걼 Bipolar Amplifier 걼 Statistical Analysis and Design Centering 걼 Frequency Doubler.
M. Atef, Hong Chen, and H. Zimmermann Vienna University of Technology
High Gain Transimpedance Amplifier with Current Mirror Load By: Mohamed Atef Electrical Engineering Department Assiut University Assiut, Egypt.
Chien-Feng Lee, Sheng-Lyang Jang, Senior Member, IEEE, and M. -H
High-linearity W-band Amplifiers in 130 nm InP HBT Technology
Ali Fard M¨alardalen University, Dept
TU3E-4 A K-band Low Phase-Noise High-Gain Gm Boosted Colpitts VCO for GHz FMCW Radar applications R. Levinger, O. Katz, J. Vovnoboy, R. Ben-Yishay.
A Large Swing, 40-Gb/s SiGe BiCMOS Driver with Adjustable Pre-Emphasis for Data Transmission over 75W Coaxial Cable Ricardo A. Aroca & Sorin P. Voinigescu.
Presentation transcript:

Chihou Lee, Terry Yao, Alain Mangan, Kenneth Yau, Miles Copeland*, Sorin Voinigescu University of Toronto - Edward S. Rogers, Sr. Dept. of Electrical & Computer Engineering * Professor Emeritus, Carleton University, Ottawa, ON, Canada. SiGe BiCMOS 65-GHz BPSK Transmitter and 30 to 122 GHz LC-Varactor VCOs with up to 21% Tuning Range

Outline Motivation VCO and BPSK transmitter circuit topologies Design methodology for lowest phase noise VCOs Experimental results Conclusions

Motivation Advanced communications (60-GHz radio) and radar systems (77-GHz cruise control). Investigate a systematic VCO design methodology focused on lowest phase noise.

Outline Motivation  VCO and BPSK transmitter circuit topologies Design methodology for lowest phase noise VCOs Experimental results Conclusions

Differential Colpitts Configuration C 2 implemented as accumulation-mode nMOS varactor. Cascode for improved isolation of output from resonant tank, and power gain. L EE & Resistive tail bias with low-pass filter to reduce bias circuit’s noise contribution. Fundamental Mode VCO Topology

Push-Push VCO Topology Active and passive components operate at ½ output frequency Similar topology as fundamental- mode VCO except output is taken at Q 2 & Q 4 ’s base. Intrinsically isolated output. Allows differential tuning (V TUNE+POS, V TUNE,-NEG ).

35-GHz VCO (Fund.)70-GHz VCO (Push-Push) VCO Schematics

BPSK Transmitter Schematic

Outline Motivation VCO and BPSK transmitter circuit topologies  Design methodology for lowest phase noise VCOs Experimental results Conclusions

VCO Design Parameters: V TANK – tank voltage swing Q TANK – tank quality factor J BIAS – current density C 1 :C 2 – capacitance ratio L B – base inductance I BIAS – bias current Designing for Lowest Phase Noise Simulation Test Circuit

1. Optimum C 1 :C 2 Ratio

2. Optimum Current Density (J BIAS ) OPTIMUM J BIAS = optimum noise current density (J opt ) of cascode. OPTIMUM J BIAS

3. Optimum Bias Current (I BIAS )

3. Optimum Base Inductance (L B ) Smallest L B results in Lowest Phase Noise

VCO Design Methodology 1.Maximize quality factor (Q) of resonant tank. 2.Bias transistors at optimum noise current density J opt. Show a simulated plot of 40 GHz & fT, fMAX for cascoded transistor configuration

VCO Design Methodology (con’t) 4.Choose smallest reproducible base inductance (L B ). 5.Sweep I BIAS to minimize phase noise while choosing C 1 :C 2 ratio to maximize V TANK while maintaining f osc. 6.Add inductive emitter degeneration L E. [Li and Rein, JSSC 2003]

VCO Design Space Examined 13 VCOs & Oscillators fabricated to examine the impact on phase noise of: 1.Base inductance (L B ) 2.Accumulation-mode nMOS varactors versus. MIM capacitors 3.Addition of L E 4.Operation on 2 nd harmonic versus. operation on fundamental.

Outline Motivation VCO and BPSK transmitter circuit topologies Design methodology for lowest phase noise VCOs  Experimental results Conclusions

Jazz Semiconductor’s commercial SBC  m BiCMOS process. Fabrication Technology Peak f T and f MAX near 155 GHz. NF min extracted from measured y-parameters [S. P. Voinigescu, et. al, JSSC 1997]

Varactor Q Characteristics

Microphotographs Family of 13 VCOs: Fundamental-Mode: (8) 35 GHz, (2) 60 GHz, Push-Push: (1) 70 GHz, (2) 120-GHz

Microphotographs (con’t) 65-GHz BPSK transmitter

35-GHz VCO Measurements Averaged Spectral Plots for 35-GHz VCO (L B = 100 pH, with L E ): (A) VCO(B) Fixed Freq. Oscillator

35-GHz VCO Measurements (con’t) Tuning and Output Power Characteristics:

Lowest Phase Noise Design Space Impact of:1. Base Inductance 2. Inductive Emitter Degeneration (L E )

60-GHz VCO Measurements Averaged Spectral Plots: (A) VCO(B) Fixed Freq. Oscillator

60-GHz VCO Measurements (con’t) Measurements over Temperature:

Push-Push VCO Measurements Spectral Plots: (a)70-GHz VCO P OUT > -14 dBm (b) 120-GHz VCO P OUT > -30 dBm

Push-Push VCO Measurements (con’t) Tuning Characteristics:

Si-Based mm-wave VCO Comparison Reference VCO L{f offset } (dBc/Hz) Tuning Range P DC (mW) P OUT (dBm) FOM *f T /f MAX (26-GHz) -87 at 100 KHz 15% ~ 40/50 GHz (BJT) (40-GHz) -97 at 1 MHz 15%  m (SOI) (43-GHz) -110 at 1 MHz 26% ~ 200 GHz (HBT) (77-GHz) -95 at 1 MHz 6% ~ 200 GHz (HBT) (63-GHz) pp -85 at 1 MHz 4%  m CMOS (150-GHz) pp -85 at 1 MHz 23% ~ 220 GHz (HBT) 35-GHz Osc at 1 MHz N/A ~ 155 GHz (HBT) 35-GHz VCO at 1 MHz 19% ~ 155 GHz (HBT) 60-GHz Osc at 1 MHz N/A ~ 155 GHz (HBT) 60-GHz VCO -103 at 1 MHz 13% ~ 155 GHz (HBT) 70-GHz VCO pp -94 at 1 MHz 21%128> -14< ~ 155 GHz (HBT) *FOM = L{f offset } - 20log(f osc /f offset ) + 10log(P DC /P OUT ) pp = push-push VCO

With DATA ( PRBS): BPSK Transmitter Measurements No DATA:

BPSK Transmitter Meas. (con’t) With DATA ( PRBS pattern):

Outline Motivation VCO and BPSK transmitter circuit topologies Design methodology for lowest phase noise VCOs Experimental results  Conclusions

Presented, with experimental validation, a systematic VCO design methodology for lowest phase noise. Compared to a MIM capacitor, accumulation-mode nMOS varactors degrades phase noise by 1-2 dB. Inductive degeneration lowers phase noise by 3-4 dB. Operation on 2 nd harmonic increases tuning range by 50% - at expense of lower P OUT First 65-GHz BPSK transmitter. Conclusions

Jazz Semiconductor, Gennum Corporation. Canadian Foundation for Innovation, Micronet, Canadian Microelectronics Corporation, NSERC. Marco Racanelli and Paul Kempf. Acknowledgements