Theoretical Analysis of Low Phase Noise Design of CMOS VCO Yao-Huang Kao; Meng-Ting Hsu; Microwave and Wireless Components Letters, IEEE [see also IEEE.

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Presentation transcript:

Theoretical Analysis of Low Phase Noise Design of CMOS VCO Yao-Huang Kao; Meng-Ting Hsu; Microwave and Wireless Components Letters, IEEE [see also IEEE Microwave and Guided Wave Letters] Volume 15, Issue 1, Jan Page(s):33 – 35 Digital Object Identifier /LMWC (410) 15 級別 : 碩一學生 : 許晉榕

Outline Introduction PHASE NOISE IN CROSS-COUPLED LC VCO MEASUREMENT AND DISCUSSION CONCLUSION

Introduction phase noise for integrated complementary metal oxide semiconductor (CMOS) voltage controlled oscillators (VCO) is an essential topic of research. The feasible design procedure and structure to obtain the low phase noise is still in progress.

PHASE NOISE IN CROSS-COUPLED LC VCO

Varactor the PMOS is used because of the wide tuning capability and low phase noise. But the quality factor of the tank is still limited mainly by the performance of the inductor

Measured VCO transfer function

A symmetric waveform is helpful to get the lower 1/f 3 corner in phase noise.

MEASUREMENT AND DISCUSSION phase noise is demonstrated with 116 dBc/Hz at 600 kHz offset (1)

=(-116)+10log[(600 X 10 6 / 2]2 X = (dBc)

COMPARISON WITH SOME REPORTED PAPERS BASING ON THE SAME STRUCTURE AND RELATED TECHNOLOGY

CONCLUSION From the procedure of optimization steps, the excess noise factor of the amplifier coming from the active device has been determined. The oscillator is implemented by the standard m CMOS technology with phase noise 116 dBc/Hz at 600 kHz offset.