Nanocrystal Non-volatile Memory Devices Kedar Patel Liu et al (April 2006) Blauwe (Trans. on Nanotechnology, March 2002) Lin et al (TED, April 2006)

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Presentation transcript:

Nanocrystal Non-volatile Memory Devices Kedar Patel Liu et al (April 2006) Blauwe (Trans. on Nanotechnology, March 2002) Lin et al (TED, April 2006)

NV Memory Device Programming Channel Hot Electron injection or Fowler- Nordheim tunneling into poly or nc-Si Erase Fowler Nordheim tunneling to substrate or source

Quantum Scale! For 50nm x 50nm memory cell (transistor) and cm -2 nanocrystal density:  25 nc per cell For 32nm x 32nm memory cell (transistor) and cm -2 nanocrystal density:  10 nc per cell

Fabrication Excess Si-Precipitation –Few 1-10keV, cm -2 Si implanted in SiO C N 2 anneal  3-10nm nc-Si precipitates, ~10 12 cm -2 Aerosol Deposition –Pyrolysis of Silane (SiH 4 ) at 950C Direct Deposition –LPCVD of Poly-Si; stop shortly after nucleation of sites before a continuous film is formed

PbSe or Co Nanocrystals Tang et al (TED, March 2007)