By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -21 Field Effect Transistor.

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Presentation transcript:

By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -21 Field Effect Transistor

Field Effect Transistors FETs are unipolar devices because unlike BJTs that use both electron and hole current, they operate only with one type of charge carrier. There are two main types of FETs; – J unction F ield E ffect T ransistors (JFETs) – M etal O xide S emiconductor F ield E ffect T ransistors (MOSFETs)

BJT is a current controlled device; that is the base current controls the amount of collector current. FET is a voltage controlled device, where the voltage between two of the terminals (gate and source) controls the current through the device. Difference Between BJTs & FETs

Junction Field Effect Transistor

JFETs are fabricated as either n-channel or p-channel. We consider a n-channel FET. Wire leads are connected to each end of the n- channel; the drain is at the upper end, and the source is at the lower end. Two p-type regions are diffused in the n-type material to form a channel, and both p-type regions are connected to the gate lead. For simplicity, the gate lead is shown to connected to only one of the p-regions. Basic Construction

JFET Symbols

Basic Operation Consider an n-channel device applied with dc bias voltages. V DD provides a drain-to- source voltage and supplies current from drain to source. V GG provides reverse bias voltage between thee gate and the source.

Basic Operation JFET always operated with the gate- source pn-junction reverse-biased. Reverse-biasing of the gate-source junction with the negative gate voltage produces a depletion region along the pn-junction, which extends into the n-channel and thus increases its resistance by restricting the channel width. The channel width and thus the channel resistance can be controlled by varying the gate voltage. Therefore the amount of drain current, I D can be controlled.

The white area represent the depletion region created by the reverse bias. It is wider toward the drain end of the channel because the reverse –bias voltage between the gate and the drain is greater than that between the gate and the source.