The Bipolar Junction Transistor (BJT)

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Presentation transcript:

The Bipolar Junction Transistor (BJT) CO2005: Electronics I The Bipolar Junction Transistor (BJT) 張大中中央大學通訊工程系 dcchang@ce.ncu.edu.tw 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Bipolar Transistor Structures 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Forward-Active Mode in the NPN Transistor Because of the large concentration gradient in the base region, electrons injected from the emitter diffuse across the base into the BC space-charge region, where the E-field sweeps them into the collector region. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Currents in Emitter, Collector, and Base Emitter Current: Exponential function of the BE voltage Collector Current: Ignoring the recombination in the base region (the base width is very tiny, micrometer), the collect current is proportional to the emitter injection current and is independent of the reverse-biased BC voltage. Hence, the collector current is controlled by the BE voltage. Base Current: BE forward-biased current Base recombination current 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Common-Emitter Configuration Common-emitter current gain The power supply voltage Vcc must be sufficiently large to keep BC junction reverse biased. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Forward-Active Mode in the PNP Transistor 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Circuit Symbols and Conventions The arrowhead is always placed on the emitter terminal, and it indicates the direction of the emitter current. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Common-Emitter Circuits 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Current-Voltage Characteristics for CE Voltage For forward-active mode, the BC junction must be reverse biased, which means that Vce must be greater than approximately Vbe(on). There is a finite to the curves. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. Early Voltage When the current-voltage characteristic curves are extrapolated to zero current, they meet at a point on the negative voltage axis at Vce=-Va, the early voltage. The slope of the curves indicates that the output resistance looking into the collector is finite. The resistance is not critical in the dc analysis. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. Breakdown Voltage Common-Base Characteristics For the curves in which , breakdown begins earlier. The carriers flowing across the junction initiates the breakdown avalanche process at somewhat lower voltages. Emitter is open. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

DC Analysis of Common-Emitter Circuit for NPN 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

DC Analysis of Common-Emitter Circuit for PNP 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Transistor Circuit Application: Switch Cutoff and Saturation Cutoff: Saturation: 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Transistor Circuit Application: Digital Logic Bipolar Inverter Multiple-input NOR gate 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Single Base Resistor Biasing 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Voltage Divider Biasing 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. Bias Stability 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Positive and Negative Voltage Biasing 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Integrated Circuit Biasing For integrated circuits, we would like to eliminate as many resistors as possible since, in general, they require a larger surface than transistors. Reference current 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. Multistage Circuits 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.

Electronics I, Neamen 3th Ed. 中央大學通訊系張大中 Electronics I, Neamen 3th Ed.