Chapter III Semiconductor Devices

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Presentation transcript:

Chapter III Semiconductor Devices 半導體元件

Basic Building Blocks of Semiconductor Devices (a) M-S Junction (b) P-N Junction (c) Heterojuction (d) MOS structure

Metal-Semiconductor Contact Schottky contact Rectifying contact Schottky Barrier M-S devices Unipolar devices High-speed devices Ohmic contact Non-rectifying contact Specific contact resistance The apace charge width in a M-S contact is inversely proportional to the square root of the semiconductor doping.The probability of tunneling through the barrier increases with the increasing doping concentration. Electrodes Energy-band diagram of a heavily doped n-semiconductor-to-metal junction

Schottky-Barrier Diode M-S junction device Unipolar device Majority-carrier device Without minority- carrier-storage effect III-V compound semiconductors (GaAs) Properities of devices: High operation speed Lower cut-in voltage Higher saturation current

The P-N Diode --- Under Thermal Equilibrium P-type and N-type semiconductors before and after the junction formed A p-n junction with abrupt doping charges at the metallurgical junction

The P-N Diode --- Under Biasing Conditions Current-voltage characteristics of a typical Si p-n junction Thermal equilibrium Forward-bias condition. Reverse-bias condition

Classification of Semiconductor Devices Bipolar Devices P-N Junction Diode Bipolar Junction Transistor (BJT) Heterojunction Bipolar Transistor (HBT) Thyristor and related power devices Unipolar Devices Schottky-barrier diode (SBD) Junction Field Effect Transistor (JFET) Metal-Oxide-Semiconductor FET (MOSFET) MOS Diode (Capacitor) Complementary MOS (CMOS)  BiMOS and BiCMOS Power MOS High-Speed Devices Metal-Semiconductor FET (MESFET) Modulation-Doped FET (MODFET), High-Electron-Mobility Transistor (HEMT)

Semiconductor Devices (continued) Microwave Devices Tunnel diode IMPATT diode Transferred-Electron Device (TED) Quantum-Effect Devices Hot-Electron Devices Photonic Devices Light Emitting Diode (LED) Semiconductor Laser (Laser Diode, LD) Photodetector Photodiode (PD), Avalanche Photodiode (APD) Phototransistor (PT) Solar Cell Display Devices Thin-Film Transistor LCD (TFT-LCD) Organic Electroluminescence Display (OELD) or Organic Light Emitting Diode (OLED)

Semiconductor Devices (continued) Integrated Devices Passive Components IC Resistor, IC Capacitor, IC Inductor MOS Menory Dynamic Random Access Memory (DRAM) Static Random Access Memory (SRAM) Nonvolatile Memory Erasable-Programmable Read-Only Memory (EPROM) Electrically Erasable-Programmable Read-Only Memory (EEPROM) Flash Memory Single-Electron Memory MEMS devices

The Bipolar Junction Transistor (BJT)

The MOSFET

The CMOS

To minimize parasitic capacitances MESFET Schottky Contact Ohmic Contact To minimize parasitic capacitances Mesa Structure

MODFET Modulation Doped FET HFET (Heterojunction FET) A thin undoped well bounded by two wider bandgap doped barrier HFET (Heterojunction FET) 2DEG FET or TEGFET, SEDFET (Separately Doped FET) Advantages: Extremely high cutoff frequency and fast access time

HEMT HEMT: Why HEMT? High Electron Mobility Transistor 250,000 cm2/V-s at 77K 2,000,000 cm2/V-s at 4K Why HEMT? In conventional MESFET: Channel doping carrier number  But mobility (impurity scattering)  conductivity is limited (  = q n ) For HEMT: Sheet carrier density is as high as 1012 cm-2 (~1020cm-3 for 10-nm thick channel layer)