IGBT Technical Training for FSC Family 2002. 01. 10 By Application Engineering Group 판매대리점:피앤에스반도체 www.pns4u.co.kr 02-2107-7240 REV.1 1/45

Construction & Operation of IGBT The operation of the IGBT simply can be treated as a partitioning of an N-channel MOSFET and a PNP bipolar transistor. The IGBT functions as a bipolar transistor that is supplied base current by a MOSFET. GATE EMITTER COLLECTOR N P N- P+ N+ COLLECTOR GATE EMITTER Structure Of IGBT Equivalent Circuit 2/45

What`s a IGBT ? COMPARISON TABLE ITEM T R I G B T MOSFET SYMBOL IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar to the power MOSFET in operation and construction. These devices offer superior performance to the bipolar-transistors. They are core cost- effective solution in high power, wide range of frequency applications COMPARISON TABLE ITEM CONTROL PARAMETER CONTROL POWER CONTROL CIRCUIT ON-RESISTANCE SWITCHING SPEED SWITCHING LOSS T R CURRENT HIGH COMPLEX LOW SLOW I G B T VOLTAGE LOW SIMPLE MEDIUM MOSFET VOLTAGE LOW SIMPLE HIGH FAST SYMBOL 3/45

Absolute Maximum Rating of IBGT Symbol Descriptions BVCES BVGES ICmax ICpeak PCmax FBSOA SCSOA Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited) Maximum voltage applicable between G-E Maximum DC current can flow into the collector. Indicated by radiation condition (ex: TC=25˚C) Maximum Peak current can flow into the collector. Indicated by current pulse width(ex:10μs) and Duty-cycle(ex:below 1%), and Radiation condition. Allowable collector loss and maximum current consumption. In usual case, at the temperature of TC (ex : 25˚C), the thermal resistance Rθjc = --------------------- becomes and usually indicated by its upper limit. Forward Bias Safe Operating Area It is the maximum pulse responding operation range to the voltageVce between C-E and the graph of the collector current. The characteristics of the high voltage part is deteriorated due to the thermal loss and the over concentration of current. It is because of the phenomena called the second breakdown mode. Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due to human fault then the flow of the abnormally high current would destroy the device, so the current sensing and the feedback to the control block become the necessity. Which requires the IGBT should withstand the short- circuit condition for about 3~5μs. ex: If the load is short-circuited when the applied voltage between the C-E is about 300~500V, then the current upto 8-12 times higher than the rated current will flow which would destroy the device within 20~30μs. Thus the protective circuit is designed to be about 10μs with the consideration of the feedback delay time. Tj(max) - TC PC (max) 4/45

Electerical Characteristics Thermal Resistance Symbol Descriptions RθJ-C(I) RθJ-C(F) RθC-S Thermal resistance between IGBT's junction to case Thermal resistance between FRD's junction to case Thermal resistance between the case of IGBT to the heat sink Electerical Characteristics Symbol Descriptions BVCES VGE(th) ICES IGES Collector-Emitter Breakdown Voltage (Gate-Emitter is short-circuited) The breakdown voltage between C-E when the gate and the emitter is short-circuited and the rated current (ex: IC=10mA) is applied to the collector. Normally the minimum value (ex: 600V) is defined. Gate Threshold Voltage The voltage between Gate-Emitter at the rated voltage between C-E and for the rated current IC(ex: 1mA). The minimum and the maximum value is given. Collector Cutoff Current The maximum collector current when the gate and the emitter is short-circuited and the rated voltage is applied to the collector. Gate - Emitter Leakage Current The maximum gate current when the collector and the emitter is short-circuited and the rated voltage is applied between the gate-emitter. 5/45

6/45 Symbol Descriptions VCE(sat) Qg Cies Coes Cres Td Tr Ton Tf Toff Collector - Emitter Saturation Voltage The saturation voltage between the collector and the emitter when the rated current is applied to the collector and the rate voltage is applied between the gate and the emitter. Total Gate Charge The amount of the gate electric charge needed for the IGBT to be completely On. The amount of the driving current needed can be decided. Input Capacitance Output Capacitance Reverse Capacitance Turn on Delay Time The time for the output to reach the 10% of the maximum of the output current waveform after the pulse is applied to the gate. Turn on Rise Time The time to reach from 10% to 90% of the output current waveform. Turn on Time The time for the output to reach the 90% of the maximum of the output current Turn off Falling Time Turn off Time waveform after the pulse is removed from the gate. 6/45

IGBT Operation Area HIGH VOLTAGE HIGH CURRENT HIGH FREQUENCY IGBT BJT 25 KW 10 1 0.1 GTO HIGH FREQUENCY POWER IGBT BJT MOSFET 1 70 1000KHZ FREQUENCY 7/45

Industrial Applications of IGBT Module & Discrete ☞Elevator ☞F.A. - Inverter, AC servo, Robotics ☞Power Supply - UPS, SMPS ☞Transportation -Ignition control, Battery charger ☞Welding machine 8/45

Consumer Applications of IGBT IH-Jar (Rice Cooker) IGBT Module & Discrete IH-Cooker MWO Camera Strobo Washing machine Inverter Air-conditioner 9/45

Examples of Application Circuit (I) ☞ home appliance (IH-JAR, IH-Cooker, MWO..) ☞ Package Type : TO-220, TO-3P, TO-264 (SGP.., SGH..., SGL...) ☞ Current rating : 30 ~ 80A 2*IGBT DISCRETE 1*IGBT DISCRETE SINGLE ENDED TYPE (VCE : 900 ~ 1700V) HALF BRIDGE TYPE (VCE : 600V) 10/45

Examples of Application Circuit (II) ☞ Industrial Equipment (Welding, UPS, IH Heater) ☞ Package Type : 2-PAK,1-PAK Module(FM2G...,FM1G....) ☞ Current Rating : 600V : 50 ~ 600A, #1200V : 50A ~ 200A 4*1-PAK IGBT MODULE 2*2-PAK IGBT MODULE FULL BRIDGE TYPE 11/45

Examples of Application Circuit (III) ☞ 3Phase Motor Drive.(Inverter,Frequency Converter) ☞ Package Type : 6-Pak,2-Pak,1-Pak Module(FM6G...,FM2G...,FM1G....) ☞ Current Rating : 600V : 50 ~ 600A, 1200V : 50A ~ 200A 6*Discrete CO-PAK 1*6-PAK IGBT MODULE 2*2-PAK IGBT MODULE 6*1-PAK IGBT MODULE M 3PHASE BRIDGE TYPE 12/45

Examples of Application Circuit (Ⅳ) DC Chopper DC Servo (NC, ROBOT) DC.M DC.M From Rectifier From Rectifier 13/45

Examples of Application Circuit (Ⅴ) Low Output CVCF Inverter CVCF Inverter (UPS) Filter M 14/45

Examples of Application Circuit (Ⅵ) VVVF Inverter (PAM) M VVVF Inverter (PWM) M 15/45

Block Diagram of Inverter System . Using the Conventional IGBT Modules Constant Voltage & Constant Frequency Variable Voltage & Variable Frequency IGBT Modules 16/45

Home Appliances Application . Using the Conventional IPMs Variable Voltage & Variable Frequency Constant Voltage & Constant Frequency 17/45

Welding Machine type-1 Full Bridge Topology 50 ~ 400A / 600V,1200V(IGBT 2-PAK Module) : Large Capacity Voltage Current Welding Output + 3φ To Gate PWM Starter 18/45

Welding Machine type-2 2 IGBT Forward Topology 20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity Voltage Current Welding Output + 3φ To Gate PWM Starter * Normally IGBT using by parallel connection Parallel numbers depend on output power * Need Vce(sat) matching tightly (with in 0.1V) 19/45

Welding Machine type-3 Half Bridge Topology 50 ~ 400A / 600V,1200V(2-PAK) : Large Capacity 20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity Voltage Current + 3φ Welding Output To Gate PWM Starter 20/45

Un-interruptible Power Supply Application Personal Use 10~50A / 600V,1200V(Depend on Battery Design)(Discrete) For Group Source 50~600A / 600V,1200V(2Module,1Module) Voutput AC-DC Converter Ac Output Battery Pack Control Circuit To IGBT Output 21/45

Power Factor Correction Application 20~40A/600V(Discrete) Home Appliance, Air-conditioner For Telecommunication Power and industrial power Vout Regulated DC Output T To Load AC Controller V,I P.F > 0.99 22/45

Camera Strobe - SCRs previously used in cameras change to IGBTs . - By using IGBTs in strobe of cameras, flash control for exact focusing and red-eye protection can be possible. - Strobe application needs low Vce(sat), high peak current capability of IGBT because of the relatively long switching period of a couple of milli-seconds. - Industry needs trench IGBT for low-voltage operating battery system from 3V source. A method of using SCRs A method of using IGBT 23/45

Induction Heating JAR & Cooker This single ended resonant inverter is developed for the rice cooker because of simple construction, high efficiency and low cost. ■ IGBTSolutions ■ Features - Low Saturation Voltage - Simple Gate Drive - Wide SOA - IGBT With FRD - SGH40N60UFD - SGL80N60UFD - SGL160N60UFD - SGL60N90DG3 - SGL40N150D - FGL40N150D - FGL60N170D Half & Full Bridge Type Single Ended Type AC Current Feedback Gate Drive Circuit IH -Controller 24/45

Micro Wave Oven (ZVS type) This single ended resonant inverter is developed for food cooker because of simple construction, high efficiency and low cost. ■ IGBTSolutions ■ Features - Low Saturation Voltage - Simple Gate Drive - Wide SOA - IGBT With FRD - SGH40N60UFD - SGL80N60UFD - SGL160N60UFD - SGL60N90DG3 - SGL40N150D - FGL40N150D - FGL60N170D Half & Full Bridge Type Single Ended Type DISPLAY AC u-Com (4-Bit) Input Key PAD Control Circuit & Gate Driver 25/45

IGBT Gate Drive Solutions-1 - Home Appliance(IH jar/cooker) - Single ended topology - General analog drive IC - Device :AN6711(Panasonic) TA8316S(Toshiba) FAN8800(FSC) - Small/Medium Power application - Bridge topology(half/full) - Photo coupler with analog drive IC - Device :HP3120 TLP250 26/45

IGBT Gate Drive Solutions-2 1 2 1 2 2 1 1 2 1 2 1 1 3 HVIC HVIC 2 1 3 HIGH SIDE 2 2 1 2 1 2 1 3 3 - Small power application - Bridge topology(half/full) - High voltage analog process with bootstrap circuit - Device : IR2112(IR) ?(Toshiba) Harris - Small Power application - Bridge topology & High side switch - High voltage analog process with bootstrap circuit - Device : IR2117(IR) ?(Toshiba) Harris 27/45

IGBT Gate Drive Solutions-3 - Medium power application - Bridge topology(half/full) - Photo coupler + analog driver with de-saturation network - Device : Photo coupler + MC33153(Motorola) FAN8800(FSC) - Medium/High Power application - Bridge topology (half/full) - Hybrid : photo coupler + discrete driver One chip : photo coupler with analog driver - Device : One chip, HP316J(HP) Hybrid, EXB841(Fuji) M57962(Mitsubishi) 28/45

Power Loss = Switching Loss + Conduction Loss ▶ Switching Loss = Turn On Loss + Turn Off Loss Vce Ic Vce(sat) Leakage Current Off Time Turn On Time On Time Turn Off Time Off Time Conduction Loss Turn On Loss Turn Off Loss 29/45

Switching Test of IGBT Inductive Load Half Bridge Test Circuit Vge G + Same D.U.T. Load -15V Ic G + Rg + 15V - 15V Vce D.U.T. - G Half Bridge Test Circuit Waveform 30/45

Question : What is a difference between CO-PAK and DISCRETE in IGBT? Answer : - CO-PAK IGBT have a parallel DIODE. freewheeling current can flow through a parallel DIODE. - CO-PAK is commonly used in Bridge Topology and DISCRETE is used in Single Ended Topology. CO-PAK IGBT => IGBT + DIODE in one PACKAGE DISCRETE IGBT => Only IGBT Application Example Discrete IGBT CO-PAK M Transformer -Forward SMPS -Fly-back SMPS -DC Motor Control - Induction Heating - Lamp Ballast - Induction Motor 31/45

Question : What is the Short Circuit Withstand Time(Tsc) ? Answer : - IGBTs are need to be protected from over current caused by Motor destruction or fault by noise. Normally protection circuit has delay time(3~7uS),so IGBTs have to withstand certain time under Short circuit condition - Motor drive product (RUF-Series) is guaranteed at least 10uS for Tsc. M Control & Driver Over Current Detect Feedback Delay time 3~7uS SC --> Detecting abnormal condition --> Feedback --> Gate Turn-off (Over Vce(sat),DC line current) (Soft Turn-off) 32/45

Question : What is a difference between RUF and UF/XF SERIES ? Answer : - IGBT application is mainly divided into two parts. . One is the motor drive application(AC INDUCTION, SERVO,BLDC,SR MOTOR). and the other is power conversion application(SMPS,UPS, CONVERTER). - product line-up and characteristics are as follow. Series RUF/RUFD UF/UFD XF/XFD ** NO Suffix Application Motor SMPS(<50khz),UPS SMPS(>100khz) IH Cooker, Strobo Design key point Rugged,SC Rated High performance High Speed depend on System Characteristics Vce(sat)=2.2V,tf=120nS Vce(sat)=2.0V,tf=80nS Vce(sat)=2.5V,tf=30nS depend on Device Example SGP5N60RUFD SGP23N60UFD ????? SGL40N150D SGR15040L ** : under developing - The ordering system of IGBT Module is not classified as applications but is follows US series for convenience. But basic characteristics of Module is identified with that of Discrete IGBT RUF Series. (Rugged,SC Rated) 33/45

Question : In place of MOSFET, IGBT can be used in power conversion application? Answer : * IGBT can take the place of MOSFET in power conversion applications because of the same gate drive method, voltage driving. * Take care of the specific characteristic of your system before applying IGBT. * Especially, in bridge topologies, do use the CO-PAK IGBT including diode. 1) LIMITATION OF FREQUENCY (in case taking place of MOSFET in several systems) - RUF/RUFD : UP TO 30KHZ - UF/UFD : UP TO 70KHZ (for hard switching) - XF/XFD : UP TO 100KHZ 2) GATE DRIVE CIRCUIT - Lower gate-resistance is possible in bridge topologies than that of MOSFET because there is any limitation of gate-resistance which can destroying devices by dv/dt and di/dt. - Lower gate-resistance offers lower turn-on loss. 34/45

SGP40N60UF(40A at Tc=25℃) SGP20N60RUF(20A at Tc=100℃) Question : What’s the IGBT’s Current Rating? Answer : * Most power devices (BJT, MOSFET... etc.) usually offers the current Rating at Tc = 25 ℃. * In motor applications, Fairchild IGBT offers the current value defined at the condition of Tc = 100 ℃ and in the power conversion applications, offers the value at Tc = 25 ℃. * The current rating of Tc = 25 ℃ is about double comparing with that of Tc = 100 ℃. SGP40N60UF(40A at Tc=25℃) SGP20N60RUF(20A at Tc=100℃) Same current rating 35/45

S/W Loss=on loss+off loss =(Eon+Eoff) * f Question : What’s Turn off Energy (Eoff) ? Answer : * Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates and how to design the thermal management. * Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and switching frequency of systems * Eoff can provide more valuable information to designer than the turn-off falling time, tf. Vce Ic Turn off Waveform S/W Loss=on loss+off loss =(Eon+Eoff) * f Turn off Power (P=V*I) Turn off Energy (E= P(t) ) 36/45

Question : How come Voltage Ratings are 600V / 1200V ? Answer : * The voltage rating of IGBT is generally divided into two part, 220/240V 3-phase AC and 400/440V. * For instance, there are 200V rating IGBTs for low voltage UPS, 1700V rating for 580 AC power source, and 2200/3300V rating for several kind of railway systems. * Industry needs 400/900/1500V rating IGBTs more and more. 1. IGBT VOLTAGE RATING ( Bridge Topology ) 2. IH APP IGBT VOLTAGE RATING ( Zero Voltage Switching ) AC 220 --> DC (220*1.4=311V) -->AC variation +Design Margin ( 311*1.8 = 560V ) AC 380 --> DC (400*1.4=560V) --> “ ( 560*1.8 = 1008V ) AC 220 --> DC(220*1.4=311V) -->reverse voltage(311*3.14=980V) --> (980*1.5=1470V ) AC 110 --> DC(110*1.4=155V) --> “ (155*3.14 =490V) --> (490*1.5=750V ) 37/45

FAIRCHILD IGBTs Solution We only recommend to use Fairchild IGBT to people who have used IGBT made in some where else. That’s the only how they can well the superior quality of Fairchild IGBT. Fairchild offers... Performance Curve High Performance - Low Saturation Voltage - High Speed Switching - Low Turn-off Energy High Ruggedness - Latch-Free Characteristics - Short-Circuit Immunity High Current - Easy to Parallel Operation - Positive Temperature Coefficient 38/45

Ordering Information of IGBT ■ Discrete S G P 10 N 60 R UF D Voltage Rating(X 10) Current Rating Device Type G:IGBT S: SEMICONDUCTOR F: FAIRCHILD Package Type P: TO-220 R: D-PAK S: TO-220F U: I-PAK H: TO-3P W: D2-PAK F: TO-3PF I : I2-PAK L: TO-264 N : N-Channel Built in FRD R : Short Circuit Rated UF : Ultra Fast S/W 39/45

Ordering Information of IGBT ■ Module FM E 6 G 30 US 60 Voltage Rating(X 10) Die characteristics US : Ultra Fast & SC Rated Current Rating G: IGBT Circuit Type 1 : Single 2 : Half Bridge 6 : 3Phase Bridge 7 : Complex Module Type Blank : Standard Type E : Econo Type C : Complex Type FAIRCHILD Module 40/45

IGBT Line-up ■ High Performance IGBT 41/45 High Performance IGBT Ic [A] @ Tc=100℃ Symbol Vces [V] 1.2 3 7 13 20 40 80 600 SGR2N60UF SGR6N60UF SGP13N60UF SGP23N60UF SGP40N60UF SGH80N60UF SGP6N60UF SGS13N60UF SGS23N60UF SGS40N60UF 600 SGR2N60UFD SGP6N60UFD SGP13N60UFD SGP23N60UFD SGH40N60UFD SGH80N60UFD SGL160N60UFD SGS6N60UFD SGS13N60UFD SGS23N60UFD SGF40N60UFD SGW6N60UFD SGW13N60UFD SGW23N60UFD 41/45

42/45 ■ Rugged IGBT Symbol Vces [V] Ic [A] @ Tc=100℃ 5 10 15 20 25 30 50 600V SGP5N60RUF SGP10N60RUF SGP15N60RUF SGP20N60RUF SGH30N60RUF SGW5N60RUF SGW10N60RUF 1200V SGH5N120RUF SGH10N120RUF SGH15N120RUF SGH20N120RUF SGH25N120RUF 600V SGP5N60RUFD SGP10N60RUFD SGH15N60RUFD SGH20N60RUFD SGH30N60RUFD SGL50N60RUFD SGS5N60RUFD SGS10N60RUFD SGW5N60RUFD SGW10N60RUFD 1200V SGH5N120RUFD SGH10N120RUFD SGH15N120RUFD SGH20N120RUFD SGL25N120RUFD D-PAK I-PAK D2-PAK I2-PAK TO-220 TO-220F TO-3P TO-3PF TO-264 42/45

■ Compact / PIM Type IGBT Module Ic [A] @ Tc=100℃ Vces [V] PKG Type 5 10 15 20 25 30 50 600V FME6G10US60 FME6G15US60 FME6G20US60 FME6G30US60 Compact FMC6G10US60 FMC6G15US60 FMC6G20US60 FMC6G30US60 FMC6G50US60 PIM FMC7G10US60 FMC7G15US60 FMC7G20US60 FMC7G30US60 FMC7G50US60 1200V FME6G5US120 FME6G10US120 FME6G15US120 FME6G20US120 FME6G25US120 Compact FMC7G5US120 FMC7G10US120 FMC7G15US120 FMC7G20US120 FMC7G25US120 PIM ■ Molding Type IGBT Module Ic [A] @ Tc=100℃ Vces [V] PKG Type 50 75 100 150 200 300 400 600V FM2G50US60 FM2G75US60 FM2G100US60 FM2G150US60 FM2G200US60 FM2G300US60 FMBH1G50US60 FMBH1G75US60 FMBH1G100US60 FMBH1G150US60 FMBH1G200US60 FMBH1G300US60 FMBH1G400US60 FMBL1G50US60 FMBL1G75US60 FMBL1G100US60 FMBL1G200US60 FMBL1G200US60 FMBL1G300US60 FMBL1G400US60 1200V FM2G50US120 FM2G75US120 FM2G100US120 FM2G150US120 FM2G200US120 43/45

■ Camera Strobe Application Ic[A] pk Symbol Vces [V] PKG Type 130 150 400 SGR15N40L SGR20N40L (D-PAK) (D-PAK) D-PAK SGU15N40L SGU20N40L (I-PAK) (I-PAK) I-PAK FGS20N40L (8-SOP) 8 -SOP ※ A ll of the Logic level Gate Drive ■ Induction Heating Application Ic[A] Symbol Vces [V] PKG Type 15 40 60 80 900 SGF15N90D SGL60N90DG3 (TO-3PF) (TO-264) TO-3PF 1500 SGL40N150D (TO-264) 1700 FGL60N170D FGL80N170D (TO-264) (TO-264) 1500V SGL40N150 (TO-264) TO-264 44/45

IGBT Module Packages & Equivalent Circuits FMBL series FME6G series FMBH series FMC6G series FM2G series FMC7G series FME6G series FME6G series FMC6G series FMC6G series FMC7G series FMC7G series FM2G series FMBL series FMBH series 45/45