D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada Carbon.

Slides:

Advertisements

Similar presentations

Atomistic Simulation of Carbon Nanotube FETs Using Non-Equilibrium Green’s Function Formalism Jing Guo 1, Supriyo Datta 2, M P Anantram 3, and Mark Lundstrom.

Advertisements

ECE : Nanoelectronics Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University

Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.

An ab-initio Study of the Growth and the Field Emission of CNTs : Nitrogen Effect Hyo-Shin Ahn §, Tae-Young Kim §, Seungwu Han †, Doh-Yeon Kim § and Kwang-Ryeol.

Graphene & Nanowires: Applications Kevin Babb & Petar Petrov Physics 141A Presentation March 5, 2013.

MOS Field-Effect Transistors MOS Field-Effect Transistorsfor High-Speed Operation D.L. Pulfrey Department of Electrical and Computer Engineering University.

Screening of Water Dipoles inside Finite-Length Carbon Nanotubes Yan Li, Deyu Lu,Slava Rotkin Klaus Schulten and Umberto Ravaioli Beckman Institute, UIUC.

1 Light-emitting Diodes Light-emitting Diodes for general lighting applications D.L. Pulfrey Department of Electrical and Computer Engineering University.

Lateral Asymmetric Channel (LAC) Transistors

Carbon Nanotube Transistors

Carbon Nanotube Field-Effect Transistors: An Evaluation D.L. Pulfrey, L.C. Castro, D.L. John Department of Electrical and Computer Engineering University.

Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP Quantum Transport in Ultra-scaled.

Optimization of Carbon Nanotube Field-Effect Transistors (FETs) Alexandra Ford NSE 203/EE 235 Class Presentation March 5, 2007.

Xlab.me.berkeley.edu Xlab Confidential – Internal Only EE235 Carbon Nanotube FET Volker Sorger.

Diodes Properties of SWNT Networks Bryan Hicks. Diodes and Transistors An ever increasing number in an ever decreasing area.

NCN 1 Neophytos Neophytou Advisory Committee Chairs: Mark Lundstrom, Gerhard Klimeck Members: Ashraful Alam, Ahmed Sameh Network for Computational.

Numerical study of transport properties of carbon nanotubes Dhanashree Godbole Brian Thomas Summer Materials Research Training Oakland University 2006.

I. ELECTRICAL CONDUCTION

C ARBON N ANOTUBE B ASED O RGANIC S OLAR C ELLS Arun Tej M. PhD Student EE Dept. and SCDT.

INAC The NASA Institute for Nanoelectronics and Computing Purdue University Circuit Modeling of Carbon Nanotubes and Their Performance Estimation in VLSI.

1 Carbon Nanotube Field-Effect Transistors Carbon Nanotube Field-Effect Transistors and their possible applications D.L. Pulfrey Department of Electrical.

Carbon Nanotube Technology An Alternative in Future SRAM memories UPC CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011.

Philip Kim Department of Physics Columbia University Toward Carbon Based Electronics Beyond CMOS Devices.

Twin Silicon Nanowire Field Effect Transistor (TSNWFET)

ICECS, Athens, December /18 From nanoscale technology scenarios to compact device models for ambipolar devices Sébastien Frégonèse, Cristell Maneux,

1 Heterojunction Bipolar Transistors Heterojunction Bipolar Transistorsfor High-Frequency Operation D.L. Pulfrey Department of Electrical and Computer.

Tamer Ragheb ELEC 527 Presentation Rice University 3/15/2007

G. S. Diniz and S. E. Ulloa Spin-orbit coupling and electronic transport in carbon nanotubes in external fields Department of Physics and Astronomy, Ohio.

Network for Computational Nanotechnology (NCN) Purdue, Norfolk State, Northwestern, MIT, Molecular Foundry, UC Berkeley, Univ. of Illinois, UTEP NEMO5.

Atomic Structural Response to External Strain for AGNRs Wenfu Liao & Guanghui Zhou KITPC Program—Molecular Junctions Supported by NSFC under Grant No.

Figure 9.1. Use of silicon oxide as a masking layer during diffusion of dopants.

December 2, 2011Ph.D. Thesis Presentation First principles simulations of nanoelectronic devices Jesse Maassen (Supervisor : Prof. Hong Guo) Department.

Szu-Wei Huang, C-V Lab, GIEE of NTU 1 黃思維 F Graduate Institute of Electronics Engineering National Taiwan University Advanced Multi-Gate Technologies.

2010 IEEE Device Research Conference, June 21-23, Notre Dame, Indiana

Modeling thermoelectric properties of TI materials: a Landauer approach Jesse Maassen and Mark Lundstrom Network for Computational Nanotechnology, Electrical.

Scaling of the performance of carbon nanotube transistors 1 Institute of Applied Physics, University of Hamburg, Germany 2 Novel Device Group, Intel Corporation,

Ultimate Device Scaling: Intrinsic Performance Comparisons of Carbon- based, InGaAs, and Si Field-effect Transistors for 5 nm Gate Length Mathieu Luisier.

PROJECT GUIDE GROUP MEMBERS Dr.B.GOPI,B.E.M.E.Ph.D P.MENAKA G.NIVEDHA M.PAVITHRA M.POORNIMA G.PRIYA 1.

Carbon nanotube is a magic material. The unique structure brings it amazing characteristics. Lots of people believe that the usage of carbon nanotube will.

Special Issues on Nanodevices1 Special Topics in Nanodevices 3 rd Lecture: Nanowire MOSFETs Byung-Gook Park.

First Principles Calculation of the Field Emission of Nitrogen/Boron Doped Carbon Nanotubes Hyo-Shin Ahn §, Seungwu Han †, Kwang-Ryeol Lee, Do Yeon Kim.

1 Automated Design of Misaligned-Carbon-Nanotube-Immune Circuits Nishant Patil Jie Deng H.-S. Philip Wong Subhasish Mitra Departments of Electrical Engineering.

ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 11: Thermal Property Measurement Techniques For Thin Films and Nanostructures.

Performance Predictions for Carbon Nanotube Field-Effect Transistors

1 ADC 2003 Nano Ni dot Effect on the structure of tetrahedral amorphous carbon films Churl Seung Lee, Tae Young Kim, Kwang-Ryeol Lee, Ki Hyun Yoon* Future.

SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University.

Nano and Giga Challenges in Microelectronics Symposium and Summer School Research and Development Opportunities Cracow Sep , 2004 Afternoon 4: Carbonanotubes.

Radiation Damage Quick Study Edward Cazalas 3/27/13.

What does 2010 Physics Nobel Prize have to do with transistor?

Carbon Nanotubes and Its Devices and Applications

Carbon Allotropes And Its Nanostructures

Fatemeh (Samira) Soltani University of Victoria June 11 th

ECE 875: Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University

Analysis of Strain Effect in Ballistic Carbon Nanotube FETs

Photocurrent measurement in thin-film single-walled carbon nanotube field- effect transistors WEERAPAD DUMNERNPANICH FACULTY OF SCIENCE DEPARTMENT OF PHYSICS.

Tunnel FETs Peng Wu Mar 30, 2017.

Quantum transport in GFET for a graphene monolayer

Graphene Transistors for Microwave Applications and Beyond Mahesh Soni1, Satinder Kumar Sharma1, Ajay Soni2 1School.

MoS2 RF Transistor Suki Zhang 02/15/17.

Lower Limits To Specific Contact Resistivity

Device Research Conference, June 19, 2012

Riphah International University, Lahore

Realizing a Low Noise Amplifier with Carbon Nanotube Technology

OMEN: a Quantum Transport Modeling Tool for Nanoelectronic Devices

Carbon Nanotube Vias By: Rhesa Nathanael.

Neerav Kharche Advisors: Prof. Gerhard Klimeck Prof. Timothy Boykin

Fabrication of GaAs nanowires for solar cell devices

Nanowire Gate-All-Around (GAA) FETs

Carbon Nanotube Diode Design

Devon Walker* and John Kitchin

Presentation transcript:

D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada Carbon Nanotube Field-Effect Transistors: Carbon Nanotube Field-Effect Transistors: Critique of High-Frequency Performance High-Frequency Performance L.C. Castro D.L. John Li Chen

sp 2 hybridized orbital, 3e - (  -bonds) 2p orbital, 1e - (  -bonds) 1s orbital, 2e - Hybridized carbon atom  graphene monolayer  carbon nanotube Carbon Nanotubes High mobility – quasi-1D, low m*, no surface states Small SCE - coaxial geometry L.C. Castro

Employment of metallic CNTs T. Iwai et al., (Fujitsu), 257, IEDM, 2005

Fabricated Carbon Nanotube FETs 300 nm SB-CNFET A. Le Louarn et al., APL, 90, , nm C-CNFET 80nm C-CNFET A. Javey et al., Nano Lett., 5, 345, 2005 Single-tube drawbacks: I max ~  A Z out ~ k 

High-frequency Carbon Nanotube FET A. Le Louarn et al., APL, , 2007

Experimental results for f T "Ultimate"

Carbon nanotube FETs: model structures C-CNFET D.L. Pulfrey et al., IEEE TNT, 2007 SB-CNFET SB-CNFET K. Alam et al., APL, 87, , 2005

Ballistic transport

v sig and  SD

SB-CNFET: summary of predictions "Ultimate"

C-CNFET: summary of predictions (July 2007)

C-CNFET: summary of predictions (latest)

D.L. John et al., WOCSDICE, 2007 Energy where most ∂Q occurs D.L. Pulfrey et al., IEEE TNT, 2007 Regional delay times 7.6 THz

Image charges in transistors QBQB QCQC BJT: q b < |q e | BJT FET: q g  |q e | + _ + + _ Q B +q b Q C +q c qeqe _ _ _ qeqe Q S +q s Q D +q d Q G +q g FET _ _ _

Q(E,z) in CNFETs -5.5eV SB-CNFET C-CNFET Insignificant resonance in channel

Comparison of v band : Si NW, Si planar and CNT Si NW and planar Si J.Wang et al., APL, 86, , 2005 (11,0) CNT Tight-binding v b,max (CNT) higher by factor of ~ 5

FETStatus W (um) Lg (nm) Tox (nm) gm (mS) Cgg (aF) Ft (THz) Si MOSExptl. (IBM) C-CN coaxTheor. (UBC) Si MOSFET and CNFET: comparison S. Lee et al., IEDM, 241, 2005 CN oxideGate

Conclusions Multi-channel CNFETs needed for high current and for impedance matching. HF performance appears to be ultimately limited by v b,max. CNs have a v b,max advantage over Si of ~ 5 times. This could lead to a g m advantage (in C-CNFETs). Translating this advantage into superior f T and f max will necessitate keeping C GG low, which may be a technological issue. Seek applications not suited to Si.