Principles & Applications

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Presentation transcript:

Principles & Applications Electronics Principles & Applications Fifth Edition Charles A. Schuler Chapter 5 Junction Transistors ©1999 Glencoe/McGraw-Hill

INTRODUCTION Amplification Transistors Characteristic Curves Transistor Testing Other Transistor Types

Out In Amplifier Out Gain = In

The base is thin and is lightly doped. NPN Transistor Structure The collector is lightly doped. C N The base is thin and is lightly doped. B P The emitter is heavily doped. E N

The C-B junction is reverse biased. NPN Transistor Bias No current flows. N C The C-B junction is reverse biased. P B N E

The B-E junction is forward biased. NPN Transistor Bias N C P B The B-E junction is forward biased. N E Current flows.

NPN Transistor Bias IC Current flows everywhere. C B Note that IB is smaller than IE or IC. IC IB IE N C Most of the emitter carriers diffuse through the thin base region since they are attracted by the collector. P B When both junctions are biased.... N E

Gain is something small controlling something large Note: when the switch opens, all currents go to zero. IC N C Although IB is smaller it controls IE and IC. P B IB N E Gain is something small controlling something large (IB is small). IE

Transistor structure and bias quiz The heaviest doping is found in the ___________ region. emitter The thinnest of all three regions is called the ____________. base The collector-base junction is ___________ biased. reverse The base-emitter junction is ____________ biased. forward The majority of the emitter carriers flow to the ___________. collector

IC = 99 mA The current gain from base to collector C is called b. IB = 1 mA P B 99 mA IC N E b = = 99 IB 1 mA IE = 100 mA

IC = 99 mA Kirchhoff’s current law: C IB = 1 mA B IE = IB + IC P B IE = IB + IC = 1 mA + 99 mA N E = 100 mA IE = 100 mA

IC = 99 mA In a PNP transistor, holes flow from emitter to collector. C IB = 1 mA B Notice the PNP bias voltages. E IE = 100 mA

Transistor currents quiz  is the ratio of collector current to ______ current. base The sum of the base and collector currents is the __________ current. emitter In NPN transistors, the flow from emitter to collector is composed of _______. electrons In PNP transistors, the flow from emitter to collector is composed of _______. holes Both NPN and PNP transistors show __________ gain. current

NPN schematic symbol Collector Base Emitter Memory aid: NPN means Not Pointing iN.

PNP schematic symbol Collector Base Emitter

IC This circuit is used to collect IC versus VCE data for several values of IB. C IB VCE B E

When graphed, the data provide an NPN collector family of curves. 100 mA 14 12 80 mA 10 60 mA IC in mA 8 40 mA 6 4 20 mA 2 0 mA 2 4 6 8 10 12 14 16 18 VCE in Volts

IC b = IB 100 mA 14 12 80 mA 10 60 mA IC in mA 8 40 mA 6 4 20 mA 2 2 4 6 8 10 12 14 16 18 VCE in Volts 14 mA IC 6 mA This type of gain is called bdc or hFE. b = = 140 = 150 40 mA IB 100 mA

bac = 100 mA 14 12 80 mA 10 60 mA IC in mA 8 40 mA 6 4 20 mA 2 0 mA 2 2 4 6 8 10 12 14 16 18 VCE in Volts 2.5 mA DIC Another type of gain is called bac or hfe. bac = = 125 20 mA DIB

100 mA 14 12 80 mA 10 60 mA IC in mA 8 40 mA 6 4 20 mA 2 0 mA 2 4 6 8 10 12 14 16 18 VCE in Volts The C-E model is a resistor. C E IB With these values of IB:

100 mA VCE @ 0 14 12 80 mA 10 60 mA IC in mA 8 40 mA 6 4 20 mA 2 0 mA 2 4 6 8 10 12 14 16 18 VCE in Volts IB When IB >> 100 mA The model is a closed switch.

100 mA 14 12 80 mA 10 60 mA IC in mA 8 40 mA 6 4 20 mA 2 0 mA IC = 0 2 4 6 8 10 12 14 16 18 VCE in Volts IB When IB = 0 The model is an open switch.

Transistor operating conditions quiz When IB is large and VCE  0, the transistor acts as a ___________ switch. closed When IB = 0 and IC = 0, the transistor acts as an ___________ switch. open When IB > 0 and VCE > 0, the transistor acts as a ___________. resistor Two current gain measures are dc and __________. ac The symbol hfe is the same as _________. ac

E-B junction is forward biased by the ohmmeter. NPN V E mA B C E-B junction is forward biased by the ohmmeter.

The C-E resistance is very high. NPN V E mA B C The C-E resistance is very high.

The meter reading is < 100 kW due to gain. NPN V E mA B C 100 kW The meter reading is < 100 kW due to gain.

Current Amplifier Current Out Current In The BJT is a current

Voltage Amplifier Current Out Voltage In The JFET is a voltage controlled amplifier.

The channel has carriers so it conducts from source to drain. Gate Source Drain P N-channel P-type substrate Structure of an N-channel JFET Drain Source Gate The channel has carriers so it conducts from source to drain.

A negative gate voltage can push the carriers from Source Drain P N-channel P-type substrate A negative gate voltage can push the carriers from the channel and turn the JFET off. Drain Source Gate

0 V -1 V -2 V ID in mA VGS -3 V -4 V -5 V VDS in Volts This is known as a depletion-mode device. N-channel JFET drain family of characteristic curves

It’s possible to make enhancement type field effect transistors as well. Metal oxide insulator Drain n G S D VDD VGG Gate p n N-channel MOSFET Source Gate bias enhances the channel and turns the device on.

Enhancement mode MOSFET drain family of characteristic curves ID in mA VGS 2 V 1 V 0 V VDS in Volts Drain Enhancement mode MOSFET drain family of characteristic curves Gate Source

The unijunction transistor fires when its emitter voltage reaches VP. Then, the emitter voltage drops due to its negative resistance characteristic. Emitter voltage Base 2 Emitter current Emitter The UJT is not useful as an amplifier. It is used in timing and control applications. Base 1

Other transistor types quiz BJTs are __________ -controlled amplifiers. current FETs are __________ -controlled amplifiers. voltage JFETs operate in the _________ mode. depletion MOSFETs operate in the __________ mode. enhancement UJTs are not useful as __________. amplifiers

REVIEW Amplification Transistors Characteristic Curves Transistor Testing Other Transistor Types