1 VLSI Fabrication Technology. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Copyright  2004 by Oxford University Press, Inc. Figure A.1 Silicon.

Slides:

Advertisements

Similar presentations

Transistors (MOSFETs)

Advertisements

Manufacturing, Engineering & Technology, Fifth Edition, by Serope Kalpakjian and Steven R. Schmid. ISBN © 2006 Pearson Education, Inc.,

Lecture 0: Introduction

C H A P T E R 15 Memory Circuits

1 Two-Port Network Parameters. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Copyright  2004 by Oxford University Press, Inc. Figure B.1 The.

Simplified Example of a LOCOS Fabrication Process

APPENDIX B SPICE DEVICE MODELS AND DESIGN SIMULATION EXAMPLES USING PSPICE AND MULTISIM Microelectronic Circuits, Sixth Edition Sedra/Smith.

Operational Amplifiers

Analog VLSI Design Nguyen Cao Qui.

VLSI Design Lecture 2: Basic Fabrication Steps and Layout

C H A P T E R 03 Semiconductors

Lecture 11: MOS Transistor

Introduction to CMOS VLSI Design Lecture 0: Introduction

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

Output Stages and Power Amplifiers

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

Introduction to CMOS VLSI Design Lecture 3: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2004 from CMOS VLSI Design A Circuits and Systems.

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

Elettronica D. AA Digital Integrated Circuits© Prentice Hall 1995 Manufacturing Process CMOS Manufacturing Process.

MOS Field-Effect Transistors (MOSFETs)

Lecture #51 Lecture #5 – VLSI Design Review zPhotolithography zPatterning Silicon zProcess steps used are: yStarts with Si wafer yThermal oxidation yPhotoresist.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc. C H A P T E R 5 MOS Field-Effect Transistors (MOSFETs)

Device Fabrication Example

Introduction Integrated circuits: many transistors on one chip.

Digital Integrated Circuits © Prentice Hall 1995 Manufacturing Process CMOS Manufacturing Process.

Basic Bipolar Process Description Bipolar Process Flow –Vertical npn –Lateral pnp –JFET –Prepared by Randy Geiger, September 2001.

1 LW 6 Week 6 February 26, 2015 UCONN ECE 4211 F. Jain Review of BJT parameters and Circuit Model HBT BJT Design February 26, 2015 LW5-2 PowerPoint two.

ISAT 436 Micro-/Nanofabrication and Applications MOS Transistor Fabrication David J. Lawrence Spring 2001.

Z. Feng VLSI Design 1.1 VLSI Design MOSFET Zhuo Feng.

CS/EE 6710 CMOS Processing. N-type Transistor + - i electrons Vds +Vgs S G D.

VLSI Design Lecture 2: Basic Fabrication Steps and Layout Mohammad Arjomand CE Department Sharif Univ. of Tech. Adapted with modifications from Harris’s.

1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.

VLSI, Lecture 1 A review of microelectronics and an introduction to MOS technology Department of Computer Engineering, Prince of Songkla.

Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.

CP-416 VLSI System Design Lecture 1-A: Introduction Engr. Waqar Ahmad UET,Taxila.

Chapter 4 Overview of Wafer Fabrication

CMOS Analog Design Using All-Region MOSFET Modeling 1 CMOS Analog Design Using All-region MOSFET Modeling Chapter 3 CMOS technology, components, and layout.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc. APPENDIX A VLSI FABRICATION TECHNOLOGY.

Semiconductor Manufacturing Technology Michael Quirk & Julian Serda © October 2001 by Prentice Hall Chapter 9 IC Fabrication Process Overview.

Introduction to CMOS VLSI Design CMOS Fabrication and Layout Harris, 2004 Updated by Li Chen, 2010.

Fabrication Technology(1)

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #9. NPN Transistor Fabrication  Introduction  NPN Fabrication-Simple Flow  AMI Bipolar Transistor Process 

Norhayati Soin 05 KEEE 4426 WEEK 12/1 3/13/2005 KEEE 4426 WEEK 12 CMOS FABRICATION PROCESS.

M.Nuzaihan DMT 243 – Chapter 2 The Role of Packaging in Microelectronics Definition of Microelectronics. Microelectronic Devices, IC Packaging, Purposes.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.

Bulk CMOS Process Description

NMOS FABRICATION 1. Processing is carried out on a thin wafer cut from a single crystal of silicon of high purity into which the required p-impurities.

CMOS Devices PN junctions and diodes NMOS and PMOS transistors Resistors Capacitors Bipolar transistors.

CMOS VLSI Design CMOS Transistor Theory

CMOS VLSI Design Introduction

CMOS VLSI Fabrication.

Control questions (physics basics, pn-junction) What does “direct bandgap” and “indirect bandgap” semiconductor mean? What is the Fermi-level? How does.

CMOS FABRICATION.

Introduction to CMOS VLSI Design Lecture 1: History & Layout Salman Zaffar Iqra University, Karachi Campus Spring 2012 Slides from D. Harris, Harvey Mudd.

2007/11/20 Paul C.-P. Chao Optoelectronic System and Control Lab., EE, NCTU P1 Copyright 2015 by Paul Chao, NCTU VLSI Lecture 0: Introduction Paul C.–P.

1 Single-Time-Constant Circuits. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Copyright  2004 by Oxford University Press, Inc. Figure D.1 The.

Figure (a) Precision full-wave rectifier based on the conceptual circuit of Fig (b) Transfer characteristic of the circuit in (a). Microelectronic.

Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56

Bipolar Junction Transistors (BJTs)

Prof. Haung, Jung-Tang NTUTL

C H A P T E R 10 Feedback Microelectronic Circuits, Sixth Edition

Modeling Rp B R1 CL A R2 Cint

Bipolar Processes Description

منبع: & کتابMICROELECTRONIC CIRCUITS 5/e Sedra/Smith

Physics of Semiconductor Devices

Table 5.1 Regions of Operation of the Enhancement NMOS Transistor Microelectronic Circuits, International Sixth Edition Sedra/Smith.

Microelectronic Circuits, Sixth Edition

VLSI FABRICATION TECHNOLOGY

Output Stages and Power Amplifiers

Presentation transcript:

1 VLSI Fabrication Technology

Microelectronic Circuits - Fifth Edition Sedra/Smith2 Copyright  2004 by Oxford University Press, Inc. Figure A.1 Silicon ingot and wafer slices.

Microelectronic Circuits - Fifth Edition Sedra/Smith3 Copyright  2004 by Oxford University Press, Inc. Figure A.2 (a) An 8-pin plastic dual-in-line IC package, (b) A 16-pin surface mount package.

Microelectronic Circuits - Fifth Edition Sedra/Smith4 Copyright  2004 by Oxford University Press, Inc. Figure A.3 A typical n-well CMOS process flow. (a) Define n-well diffusion (mask #1) (b) Define active regions (mask #2) (e) n+ diffusion (mask #4) (f) p+ diffusion (mask #5) (c) LOCOS oxidation (g) Contact holes (mask #6)

Microelectronic Circuits - Fifth Edition Sedra/Smith5 Copyright  2004 by Oxford University Press, Inc. Figure A.3 (Continued) (d) Polysilicon gate (mask #3) (h) Metallization (mask #7)

Microelectronic Circuits - Fifth Edition Sedra/Smith6 Copyright  2004 by Oxford University Press, Inc. Figure A.4 Cross-sectional diagram of an n- and p-MOSFET.

Microelectronic Circuits - Fifth Edition Sedra/Smith7 Copyright  2004 by Oxford University Press, Inc. Figure A.5 Cross sections of resistors of various types available from a typical n-well CMOS process.

Microelectronic Circuits - Fifth Edition Sedra/Smith8 Copyright  2004 by Oxford University Press, Inc. Figure A.6 Interpoly and MOS capacitors in an n-well CMOS process.

Microelectronic Circuits - Fifth Edition Sedra/Smith9 Copyright  2004 by Oxford University Press, Inc. Figure A.7 A pn junction diode in an n-well CMOS process.

Microelectronic Circuits - Fifth Edition Sedra/Smith10 Copyright  2004 by Oxford University Press, Inc. Figure A.8 Cross-sectional diagram of a BiCMOS process.

Microelectronic Circuits - Fifth Edition Sedra/Smith11 Copyright  2004 by Oxford University Press, Inc. Figure A.9 A lateral pnp transistor.

Microelectronic Circuits - Fifth Edition Sedra/Smith12 Copyright  2004 by Oxford University Press, Inc. Figure A.10 p-Base and pinched p-base resistors.

Microelectronic Circuits - Fifth Edition Sedra/Smith13 Copyright  2004 by Oxford University Press, Inc. Figure A.11 Cross-sectional diagram of a symmetrical self-aligned npn SiGe heterojunction bipolar transistor (HBT).

Microelectronic Circuits - Fifth Edition Sedra/Smith14 Copyright  2004 by Oxford University Press, Inc. Figure A.12 A CMOS inverter schematic and its layout.

Microelectronic Circuits - Fifth Edition Sedra/Smith15 Copyright  2004 by Oxford University Press, Inc. Figure A.13 Cross section along the plane AA of a CMOS inverter.

Microelectronic Circuits - Fifth Edition Sedra/Smith16 Copyright  2004 by Oxford University Press, Inc. Figure A.14 A set of photomasks for the n-well CMOS inverter. Note that each layer requires a separate plate: (a), (d), (e), and (f) dark-field masks; (b), (c), and (g) clear-field masks.