241-208 CH111 Chapter 11 CMOS and TTL Circuits By Taweesak Reungpeerakul.

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Presentation transcript:

CH111 Chapter 11 CMOS and TTL Circuits By Taweesak Reungpeerakul

CH112 Contents Basic Operational Characteristics and Parameters CMOS Circuits TTL Circuits

CH Basic Operational Characteristics and Parameters DC Supply Voltage  CMOS: +5 or +3.3 Volts  TTL : +5 Volts CMOS Logic Levels  +5 V Supply V IH : VV OH : V V IL : VV OL : V  +3.3 V Supply V IH : VV OH : V V IL : VV OL : V TTL Logic Levels (+5 V Supply ) V IH : 2-5 VV OH : V V IL : VV OL : V

CH Basic Operational Characteristics and Parameters (cont.) Noise Immunity Noise Margin Power Dissipation Propagation Delay (t PHL & t PLH ) Speed-Power Product Loading and Fan-out

CH115 Noise Immunity

CH116 Noise Margin V NH = V OH(min) – V IH(min) V NL = V IL(max) – V OL(max) Find V NH & V NL for 5 V CMOS  V NH = V OH(min) – V IH(min) = 4.4 – 3.5 = 0.9 V  V NL = V IL(max) – V OL(max) = 1.5 – 0.33 = 1.17 V Question: Find V NH & V NL for 5 V TTL

CH117 Power Dissipation I CC = I CCH +I CCL 2 P D = V CC *I CC Example: find P D  2 µA when HI  3.6 µA when LO  50% Duty cycle Power VS Frequency I CC = 2.8 µA P D = (5V)(2.8µA) = 14 µW

CH118 Loading and Fan-out Fan-out

CH119 CMOS Loading

CH1110 TTL Loading

CH CMOS Circuits MOSFET n-channel p-channel

CH1112 CMOS Inverter

CH1113 CMOS NAND Gate

CH1114 CMOS NOR Gate

CH1115 Open-drain Gate

CH1116 Tristate CMOS Gate

CH TTL Circuits The Bipolar Junction Transistor (BJT) TTL Inverter TTL NAND Gate Open-collector Gates Tristate TTL Gates

CH1118 The Bipolar Junction Transistor (BJT)

CH1119 TTL Inverter

CH1120 TTL NAND Gate

CH1121 Open-collector Gates

CH1122 Tristate TTL Gate