It was found that phosphoric acid etching will not degrade electrical properties of the devices. It was also found that we can enhance the LED output intensity by 30% using phosphoric acid etching. 9
OMDL “ LED 碩 0 課程簡報 ” 施敏 “ 半導體元件物理與製作技術 C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, “Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls,” S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, “InGaN–GaN multiquantum well blue and green light emitting diodes,” 10
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