NA62 Gigatracker Working Group Meeting 2 February 2010 Massimiliano Fiorini CERN

Sensor wafer production processing of 10 “dummy” wafers already completed wafers are now stored at CERN and ready to be shipped to bump bonding company processing of “standard” wafers has started: wafers have been shipped to CERN for planarity measurement wafer #1 (end of October) wafer #2, with different passivation stack (beginning of Nov.) wafer #3, without passivation, plus one wafer with oxide and one with nitride only (end of November) wafer #3 (re-processed) and wafer #4 (different passivation stack) were shipped last week and are now being measured etching machine (FBK) broke during December (few weeks delay)

SPARES

Wafer #1

Wafer #2

Wafer #3

Picture of Wafer #1

Wafer material “standard” wafers 100 mm high resistivity FZ wafers resistivity: >5 kΩcm n-type, phosphorous doped thickness: (200 ± 10)  m “dummy” wafers 100 mm Czochralski wafers (525 ± 25)  m thickness

Operation parameters Depletion voltage: < 30 V Operation voltage: > V Breakdown voltage: > 500 V Dark operation voltage: < 8 nA/cm 2 at 20 °C (approximately 150 nA for full size sensor) Multi-guard structure for sensor: according to FBK, the 12 guard rings option is most suitable for high voltage operation Distance between last active pixel edge and scribe line is 1.14 mm