Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University of Cagliari, Italy Physics and Astronomy Dep., University of Glasgow, United Kingdom

Detector features and measurements equipment High resistivity n-type silicon bulk wafer Boron implantation 3 detector for each wafer Detector area 2.8 x 3.8 cm 2 No. of pixes [IWORID 2001] Probe station K.Suss Keithley 237 source meter Keithley 2400 source meter Keithley 590 CV analyzer Deuterium lamp Hamamatsu Monochromator Y. Jobin Processed at COLIBRIS Neuchatel, Switzerland

Characteristics of the standard detector: responsivity The slope is regular after 5 V of bias dark UV radiation

Characteristics of the standard detector: depletion The depletion begin at low bias

Characteristics of the standard detector: single pixel depletion The CV is reached biasing all the detector

Validation examples with collected signal (UV-dark) The graf. show the current value difference between UV - dark

Complete validation with CV charac. The CV comparison provide that the deplation condition is also well satisfy

The validation of the production process 24 wafer or 72 detector are been processed 1 wafer present C.C. for all the 3 detector 2 wafer present high noise for all 3 detector That is 13% 8 detector present high noise That is 11% 3 detector present swing That is 4% 21 wafer and 52 efficient detectors detector pie

Further work Fit with the exponential addition is better