Phase change memory technology Rob Wolters September 2008.

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Presentation transcript:

Phase change memory technology Rob Wolters September 2008

Rob Wolters, 29 september Contents Introduction Phase change materials Memory cell concepts Switching Endurance Retention Perspective

Rob Wolters, 29 september Programming and erasing the floating gate Control gate Floating gate Control gate SiO 2 Si 3 N 4 Polysilicon High voltage “Thick” gate oxide Double poly

Rob Wolters, 29 september Introduction (present NVM) density is improving! for how long? performance is stagnating! forever!

Rob Wolters, 29 september Optical storage: CD, DVD and Blu-ray disc

Rob Wolters, 29 september Optical storage: Blu-Ray DVD-RW 300 nm

Rob Wolters, 29 september Phase change materials SEM picture of DVD-RW dots Sb-M SbTe-M ‘ 225’

Rob Wolters, 29 september What is the PC RAM challenge: How to integrateinto DVD-RW materials on chip

Rob Wolters, 29 september PC RAM principle A simple scalable device: An access transistor and a programmable element (PE) High switching speed (~ns) Read/write endurance: >10 12 (Flash: 10 6 ) Memory array with NMOS transistors: PE word-lines bit-lines PE based on a switching resistance Phase-change materialsamorphous phase: ‘high’-Ohmic crystalline phase: ‘low’-Ohmic Fast switching between amorphous and crystalline phase

Rob Wolters, 29 september Phase change technology: Ovonyx cell (Ovshinsky in 1966) Small amorphous volume ~20 nm 3 ! Sidewall spacer contact 1T – 1R cell Ovonyx cell

Rob Wolters, 29 september Cell concepts Megabit demonstrators by Intel, STM, Samsung  Ovonyx concept Small contact area between PC-layer and electrode Small volume undergoes phase change “Ovonyx concept” (cross section) “NXP novel line concept” (top view) Small area highest resistance NXP Approach: Novel cell concept & Material = Electrode material= Phase-change material

Rob Wolters, 29 september line of phase-change material Thickness: 15 nm Width: 50nm Length: 1000 nm Metal contacts (TiN) Line concept

Rob Wolters, 29 september Switching Electric pulses induce Joule heating RESET pulse: - T > T melt - Rapid cooling down  amorphization SET pulse: - T > T cryst - Longer pulse  crystallization

Rob Wolters, 29 september Single cell data for “fast-growth” material

Rob Wolters, 29 september Electric pulses induce Joule heating RESET pulse: - T > T melt - Rapid cooling down  amorphization Phase-change materials Cell switching RESET PE word-lines bit-lines P = I 2. R (Joule heating) I: determined by technology node For optimum energy transfer: R PE = R transistor (~2 k Ω) R PE = ρ. L/A

Rob Wolters, 29 september nm 5 nm Phase-change materials Cell switching RESET I reset as a function of line width for 20 and 5 nm thick PC, L=2W

Rob Wolters, 29 september Phase-change materials Cell switching SET Amorphous state shows a threshold voltage

Rob Wolters, 29 september Cell switching Vdut [V] Idut [mA] Crystalline Amorphous Threshold voltage PE word-lines bit-lines V dut = V T. L V: determined by technology node V T : material characteristic V = 1-2 V, L < 100 nm

Rob Wolters, 29 september Process integration PC cells embedded in a standard CMOS process W-plugs Metal 2 Via & Trench TaN Electrode Passivation STI Phase change cell Metal1 Top view SEM Cross-section SEM

Rob Wolters, 29 september Sensing window in SET/RESET resistance 2 kb memory sub-sector SET RESET Integrated Test Cells

Rob Wolters, 29 september Imin+15% Endurance

Rob Wolters, 29 september Retention DVD: amorphous dots in a crystalline matrix Size: appr. 300 x 300 nm PC cell: amorphous dot and crystalline areas aside. Size: appr. 50 x 100 nm System tends to the lowest energy: crystallinity!

Rob Wolters, 29 september Retention DVD: amorphous dots in a crystalline matrix Ga 15 Sb 75 Increased doping

Rob Wolters, 29 september Positioning of amorphous spot. Thomson Effect IEDM 2007 Thermoelectric effect

Rob Wolters, 29 september PCM performance Fast (~50 ns) Low voltage (0.4-2 V) Scaling: good Medium endurance ( ) Medium current (  A) Energy (pJ/switch) PCM costs Only 3 additional masks NVM/Flash performance Slow (  s-ms) High voltage (10-15 V) Scaling: bad Short endurance ( ) Low current (~ nA) Energy (nJ/switch) NVM/Flash costs 8-10 additional masks Perspective