MAPLD 2005 / E134 Rockett A 0.15  M Radiation-Hardened Antifuse Field Programmable Gate Array Technology The RH AX250-S production installation effort.

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Presentation transcript:

MAPLD 2005 / E134 Rockett A 0.15  M Radiation-Hardened Antifuse Field Programmable Gate Array Technology The RH AX250-S production installation effort is sponsored by the Defense Threat Reduction Agency. Leonard Rockett 1, Dinu Patel 1, Steven Danziger 1, Balwinder Sujlana 1, Les Palkuti 2, John McCollum 3, J.J. Wang 3, Brian Cronquist 3, Farid Issaq 3 and Frank Hawley 3 1 BAE SYSTEMS, 9300 Wellington Road, Manassas, VA Defense Threat Reduction Agency, 6801 Telegraph Rd, Alexandria VA Actel Corporation, 2061 Stierlin Ct, Mountain View, CA MAPLD 2005 / E134 Rockett

MAPLD 2005 / E134 Rockett Outline Introduction Process Development – Base Radiation Hardened Process –Anti-fuse –High Voltage Transistor Radiation Results –Total Ionizing Dose –Single Event Gate Rupture –Single Event Upset Summary 1

MAPLD 2005 / E134 Rockett Introduction FPGA products are used extensively in space systems - Since 1996, BAE Systems has supplied Actel over 25,000 ONO anti-fuse based Rad Hard FPGA’s Next generation radiation hardened Metal to Metal (M2M) anti-fuse based FPGA is needed for advanced military and space applications Actel and BAE SYSTEMS are developing next generation RH FPGA, leveraging: - Our decade long collaboration - Actel’s proven rad tolerant FPGA design - BAE Systems’ newly modernized rad hard CMOS technology capabilities. 2

MAPLD 2005 / E134 Rockett RH15 Radiation Hardened Base Process Radiation Hardened FPGA – AX250-S FPGA Unique features -High Voltage Tx - Anti-fuse RHAX250-S Approach Final stages 3

MAPLD 2005 / E134 Rockett Off-Current Total Ionizing Dose Response for 3.3V NFET Transistor High voltage NFET transistors exceed hardness requirements Unhardened Sample Hardened Splits 4

MAPLD 2005 / E134 Rockett Total Dose Response for Parasitic Isolation (STI) Device High voltage transistor isolation exceeds hardness requirements Unhardened Sample Hardened Splits 5

MAPLD 2005 / E134 Rockett –Gamma-Cell Dose-rate = 46rd(SiO 2 )/s Maximum Dose = 2Mrd(SiO 2 ) Room temperature Known pattern (all 1’s) clocked into circuit Vdd(Core) = 1.65V Vdd(I/O) = 3.6V TID Radiation Testing - RH15 High Speed Ckt RH15 Base process Error-bars are minimum and maximum of dataset 6 DC parametric shows stability to 2Mrd(SiO 2 ) Idd(Q)-Core shows very little change in value after 2Mrd(SiO 2 )

MAPLD 2005 / E134 Rockett TID Radiation Testing on High Speed Ckt RH15 Base process RH15 High Speed Circuit shows >1GHz performance both pre- and post-irradiation (2 Mrd(SiO 2 )) Error-bars are minimum and maximum of dataset 7

MAPLD 2005 / E134 Rockett TID Testing on 4Mb SRAM RH15 Base process 8 DC & AC parameters and functionality show very little change after 2Mrd(SiO 2 )

MAPLD 2005 / E134 Rockett RH15 Radiation Hardened Base Process Radiation Hardened FPGA – AX250-S FPGA Unique features -High Voltage Tx - Anti-fuse RHAX250-S Approach Final stages 9

MAPLD 2005 / E134 Rockett RTAX250-S RHAX250-S Process & Design Rule Development Process Integration / Technology Validation Product Demonstration RTAX250-S design transferred to BAE QML Qualification Actel-BAE collaboration supported by DTRA RHAX250-S Product Road Map   Completing First FPGA lots started 10

MAPLD 2005 / E134 Rockett Radiation Hardness Features Total Ionizing Dose:  1Mrad (Si) Single Event Latchup:Immune Single Event Upset LET :> 37MeV-cm 2 /mg SET e-RAM : < 1E-10 e/b-d (EDAC) TMR-hardened registers. RHAX250-S Product Features: M2M Antifuse Structure: RHAX250-S FPGA Product M2M antifuse 11

MAPLD 2005 / E134 Rockett SEM Cross-section of Metal to Metal Anti-fuse Ti TEOS TiN Amorphous Si W- Stud 12

MAPLD 2005 / E134 Rockett Anti-Fuse Time Dependent Dielectric breakdown Anti-fuse element TDDB meets or exceeds requirements 15

MAPLD 2005 / E134 Rockett PFET High Voltage Transistors Data High voltage PFET process optimization is very encouraging 16

MAPLD 2005 / E134 Rockett NFET High Voltage Transistor Data High voltage NFET optimization meets the specifications requirement 17

MAPLD 2005 / E134 Rockett SEDR Testing - Actel’s Prototype RTAX250 Plotting power supply current (ICC) versus run time and checking ICC, there was no occurrence of SEDR in any test run. The maximum LET used at BNL was 60 MeVcm2/mg, and the maximum LET used at TAMU was 54 MeVcm2/mg. Normal incidence is worst case for SEDR, so the worst case testing was performed in test runs with high LET ions. ICCA has small fluctuations but no significant permanent jumps, which would be the signature of SEDR. 18

MAPLD 2005 / E134 Rockett Triple Modular Redundant Flip-Flop (K-Latch) Triple Modular Redundant (TMR) Latch used for SEU Hardness 19

MAPLD 2005 / E134 Rockett Hard-wired TMR Flip-Flop Cross-section per bit Logic with TMR latches exceed hardness requirements SER = 1.96x upsets/bitday Weibull Fit 20

MAPLD 2005 / E134 Rockett Summary BAE Systems and Actel Corporation continue their long successful collaboration – 0.15  m radiation-hardened 250K gate FPGA for space in development – Same form, fit, and function as commercial RT version RH process Total ionizing dose data meets target Single Event Upset test results of TMR-hardened flip-flop designs meet target, no occurrence of SEDR observed during heavy ion testing Full suite of radiation testing planned for Radiation Hardened product demonstration 21 Product installation efforts are progressing well toward completion in early 2006, with qualified parts available in late 2006 The RH AX250-S production installation effort is sponsored by the Defense Threat Reduction Agency.