LEKIDs effort in Italy Martino Calvo B-Pol workshop, IAP Paris, 28 - 30 July.

Slides:



Advertisements
Similar presentations
Note 2 Transmission Lines (Time Domain)
Advertisements

Chapter 9. PN-junction diodes: Applications
Bolometric astronomical imaging at mm wavelengths
Flex Circuit Design for CCD Application ECEN 5004 Jon Mah.
Optical Lumped Element MKIDs Ben Mazin, February 2012 The Optical/UV MKID Team: UCSB: Ben Mazin, Sean McHugh, Kieran O’Brien, Seth Meeker, Erik Langman,
ENE 428 Microwave Engineering
High speed DSP for infrared space camera Martin Grim.
Chapter 13 Transmission Lines
LECTURE- 5 CONTENTS  PHOTOCONDUCTING MATERIALS  CONSTRUCTION OF PHOTOCONDUCTING MATERIALS  APPLICATIONS OF PHOTOCONDUCTING MATERIALS.
30 th September 2004 High Power RF Couplers James Rogers High Power RF Couplers ELSRF Daresbury Laboratory.
EKT 441 MICROWAVE Communications
Chapter Fourteen: Transmission Lines
Aluminium Kinetic Inductance Detectors at 1.54 THz limited by photon noise and generation-recombination noise Pieter de Visser, Jochem Baselmans, Juan.
A NEW PRINTED QUASI-LANDSTORFER ANTENNA
Hybrid MKIDs with ground-side deposition - A novel method for microwave detection with a resonator separated from antenna H. Watanabe, M. Hazumi a, H.
1 Chapter 5 Sensors and Detectors A detector is typically the first stage of a communication system. Noise in this stage may have significant effects on.
Ultimate Cold-Electron Bolometer with Strong Electrothermal Feedback Leonid Kuzmin Chalmers University of Technology Bolometer Group Björkliden
9. Semiconductors Optics Absorption and gain in semiconductors Principle of semiconductor lasers (diode lasers) Low dimensional materials: Quantum wells,
Basic Detection Techniques Front-end Detectors for the Submm Andrey Baryshev Lecture on 21 Sept 2006.
Performance of the DZero Layer 0 Detector Marvin Johnson For the DZero Silicon Group.
Embedded Pitch Adapters a high-yield interconnection solution for strip sensors M. Ullán, C. Fleta, X. Fernández-Tejero, V. Benítez CNM (Barcelona)
RF background, analysis of MTA data & implications for MICE Rikard Sandström, Geneva University MICE Collaboration Meeting – Analysis session, October.
P ERFORMANCE E NHANCEMENT F OR S PIRAL I NDCUTORS, D ESIGN A ND M ODELING E FE Ö ZTÜRK.
Cardiff University Astronomy Instrumentation Group IRAM Camera meeting October 13-14, Cardiff University Astronomical Instrumentation Peter Ade.
A. Monfardini, IAP 26/06/ Kinetic Inductance Detectors for CoRE-like applications Potentially involving (from the technical point-of-view): - Grenoble.
Advanced Microwave Measurements
1 Basics of Microwave Measurements Steven Anlage
Why silicon detectors? Main characteristics of silicon detectors: Small band gap (E g = 1.12 V)  good resolution in the deposited energy  3.6 eV of deposited.
ECE 546 – Jose Schutt-Aine 1 ECE 546 Lecture -04 Transmission Lines Spring 2014 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois.
Lecture 6.
Waveguide High-Speed Circuits and Systems Laboratory B.M.Yu High-Speed Circuits and Systems Laboratory 1.
A. Monfardini, IAP 30/07/ NIKA (Néel IRAM KID Array) First light at the 30-m IRAM dish NIKA collaboration: - Institut Néel - Grenoble - AIG - Cardiff.
Planar Antenna-Coupled Hot-electron Microbolometer Shafinaz Ali 1, Dan Mccammon 1, Lance D. Cooley 2, Kari.L.Nelms 1, John Peck 3, Daniel Prober 4, Dan.
Device Noise Two figures of merit for noisy devices
Neel IRAM KIDs Array - Cryostat - Filters - Cold electronics - Measurement methods and assumptions for Sensitivity calculation - Antenna-coupled 42 pixels.
The Second International Workshop on Ultra-high-energy cosmic rays and their sources INR, Moscow, April 14-16, 2005 from Extreme Universe Space Observatory.
Kinetic Inductance Detectors SRON Stephen Yates, Jochem Baselmans, Andrey Baryshev, Jan Joost Lankwarden, Henk Hoevers. TNO G. Gerini, A. Neto, D. Bekers.
Transmission Lines No. 1  Seattle Pacific University Transmission Lines Kevin Bolding Electrical Engineering Seattle Pacific University.
SILICON DETECTORS PART I Characteristics on semiconductors.
Vistas in Axion Physics April 2012 ADMX Cavities at higher and lower frequencies C. Hagmann, J. Hoskins, I. Stern, A.A. Chisholm, P. Sikivie, N.S. Sullivan,
Electrical characterization of a superconducting hot spot microbolometer S.Cibella, R. Leoni, G. Torrioli, M. G. Castellano, A. Coppa, F. Mattioli IFN-CNR,
Lecture 5.
F AcceleratorDivision Introduction to RF for Particle Accelerators Part 2: RF Cavities Dave McGinnis.
Ph.D. Candidate: Yunlei Li Advisor: Jin Liu 9/10/03
Production and Installation Policy of IP-BPM ATF2 Project Meeting, 2006/12/18 Y. Honda, Y. Inoue, T. Hino, T. Nakamura.
WINTER 01 Template.
Norhayati Soin 06 KEEE 4426 WEEK 3/2 20/01/2006 KEEE 4426 VLSI WEEK 4 CHAPTER 1 MOS Capacitors (PART 3) CHAPTER MOS Capacitance.
Single photon counting detector for THz radioastronomy. D.Morozov 1,2, M.Tarkhov 1, P.Mauskopf 2, N.Kaurova 1, O.Minaeva 1, V.Seleznev 1, B.Voronov 1 and.
Demonstration of a Far-IR Detector for Space Imaging Principal Investigators: C. Darren Dowell (326), Jonas Zmuidzinas (Caltech) Co-Investigators: Peter.
Modelling and Simulation of Passive Optical Devices João Geraldo P. T. dos Reis and Henrique J. A. da Silva Introduction Integrated Optics is a field of.
Metal-insulator-metal metamaterial absorbers consisting of proximity-coupled resonators with the control of the fundamental and the second-order frequencies.
MAKO A 350/850  m camera designed for operation at the Caltech Submillimeter Observatory Christopher McKenney.
Hanyang University 1/17 Antennas & RF Devices Lab. MODERN ANTENNA HANDBOOK by CONSTANTINE A.BALANIS ch. 4.4 – Jeong Gu Ho.
Hanyang University 1/24 Microwave Engineering Chapter 8.8 Wonhong Jeong
STATUS OF R&D AT UCSB Paul Szypryt Mazin Lab August 26, 2013.
LLNL-PRES This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.
Four wave mixing in submicron waveguides
PN-junction diodes: Applications
Circuit QED Experiment
Characterization and modelling of signal dynamics in 3D-DDTC detectors
I. Rashevskaya on behalf of the Slim5 Collaboration, Trieste Group
Planar Antenna-Coupled Hot-electron Microbolometer
Large bolometer arrays on radio telescopes.
PIN DIODE.
Renzo F. Parodi INFN-Genova
A near–quantum-limited Josephson traveling-wave parametric amplifier
BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.
Chapter II Resonators and Impedance Matching
Why silicon detectors? Main characteristics of silicon detectors:
Superconducting cavity electro-optics: A platform for coherent photon conversion between superconducting and photonic circuits by Linran Fan, Chang-Ling.
Presentation transcript:

LEKIDs effort in Italy Martino Calvo B-Pol workshop, IAP Paris, July

Microwave Kinetic Inductance Detectors: working principle Superconductors below a critical temperature T c have electrons divided in two different populations: - the Cooper Pairs, electrons bound together with an energy E=2  3.528*k b T c by the electron-phonon interaction. They act as superconducting carriers. - the Quasi-Particles, single electrons which act as carriers in a normal metal. In this two fluids model the total conductivity of the material is:  =  1 (n QP ) - j  2 (n CP ) Quasi-Particles Z s = R s (  1,  2 ) + i X s (  1,  2 ) Cooper Pairs and the complex surface impedance is: X s =  L int =  (L m,int +L k )

n QP (  m -3 ) temperature (K) The values of R s and X s depend on the densities of QPs and CPs. By measuring them, we can get information on n QP. Which are the effects of incoming radiation on a superconducting strip? n′ CP < n CP QP CP T<T c h  >2  Z s changes because: n CP increases n QP decreases both R s and X s increase, in particular L kin How can we measure the small variation in L k ? film thickness (nm) L x (pH/square)

CcCc R QP L kin L mag ClCl The superconductor can be inserted in a resonating circuit with extremely high Q. Two different possibilities: Feedline Inductive Coupling Inductive section Capacitive section 1) Distributed l= bias /4 resonators 2) Lumped resonators l<< bias response depends on where the photon hits the sensor equivalent circuit: RLC series needs some sort of antenna no current variation along its length, acts as free absorber equivalent circuit: RLC series

C1C1 R 1 QP L 1 kin L 1 mag C2C2 R 2 QP L 2 kin L 2 mag CNCN R N QP L N kin L N mag RF carrier (f 1 + f 2 + f f N ) Pixel 1, f 1 Pixel 2, f 2 Pixel N, f N The fact that each resonator has no effect even few MHz away from its resonant frequency makes these detectors ideal for frequency domain multiplexing:  Very resistant: materials are all suitable for satellite and space missions, like CMB mission.  Extremely simple cold electronics: one single amplifier can be used for pixels. The rest of the readout is warm.  Very flexible: different materials and geometries can be chosen to tune detectors to specific needs.  order of pixels read with a single coax low thermal load! Architecture of typical multipixel readout system

Lumped resonators for millimetric wavelengths: design process 1)pixel size: needs to be of order of at least one wavelength 2)meander section: optimization of the matching with the free space impedance If >>s 3) Capacitive section: choice of the resonance frequency 2mm 4m4m 280  m Sonnet simulation Very low C!

Our first LEKID mask: Design Fabrication

Superconducting metal: Aluminum ok for mm waves: gap = 90 GHz T c = 1.27 K Aluminum thickness t: Lumped resonators for millimetric wavelengths: materials and thicknesses lower t higher responsivity lower t higher resistivity = better free space matching Substrate material: Silicon and Sapphire t=20nm, 40nm Si 400  m, Si 170  m, Sa 300  m free spacesubstrateresonatorback short temperature (K) dT/dN QP (K) Si 389  m frequency (GHz) Fractional absorption Si 400  m Fractional absorption frequency (GHz)

Measurements: resonances S 21 (dB) frequency (GHz) Power sweep frequency (GHz) S 21,norm (dB) frequency (GHz) S 21,norm (dB) Typical Q factors of , limited in these first chips by the strong coupling to the feedline Q i as high as already at 305mK

Effect of temperature sweep on: phase amplitude Higher T Higher n qp Higher losses Higher T Lower n cp Lower f 0

(deg/  m -3 ) the red crosses correspond to the base temperature resonant frequency Volume≈3100  m 3 All responsivities are in the interval: n QP  m -3  Phase shift (degree) n QP  m -3  Phase shift (degree) Temperature sweeps

System modified for optical measurements: 300K30K2K 300mK Polyethilene window Fluorogold (400GHz lowpass) Fluorogold + 145GHz bandpass filter BB(77K) chopper KID d A in 300mK

Signal ≈ 19deg

Quasi-particles lifetime  QP =55.6 ±3.6  s Absorption efficiency Si 400  m Fractional absorption frequency (GHz) To measure  QP, we can use the signal due given by incoming cosmic rays:

Noise level ≈ The optical Noise Equivalent Power: Typical photonic NEP from ground ≈

Cosmic rays issue We have seen that CR can be useful to determine  QP,but... too many of them! Rate of approximately 1 per minute! The use of membranes could help solving this issue!  1, h 1  2, h 2  3, h 3 Equivalent stress The choice of the materials and thicknesses of layers has to be done in order to have a tensile structure with  eq ~ 50MPa Membranes:

p-type HR 500  m DSP Si field oxide deposition (SiO 2 ) 400nm LPCVD nitride deposition (Si 3 N 4 ) 150nm LPCVD thermal oxide deposition (TEOS) 450nm Trilayer (SiO 2 /Si 3 N 4 /TEOS) Wet chemical etching provides an high degree of selectivity to thermal oxide Wet etching in TMAH a) To membrane b) Anisotropic etchant 54.74° 2) LPCVD nitride deposition (Si 3 N 4 ) 20nm Quadrilayer (SiO 2 /Si 3 N 4 /TEOS/ Si 3 N 4 ) Leaving 15  m Si h tot = 1  m  eq = 50MPa 1) a) b) underetch h tot = 1  m  eq = 30MPa Different solutions tested:

Dimension (mm) # membranes # damaged 4321 # good percentage SiO 2 /Si 3 N 4 /TEOS/ Si 3 N 4 : 98% success # damaged # good percentage SiO 2 /Si 3 N 4 /TEOS: 91% success Fabrication at FBK “Fondazione Bruno Kessler”, Trento Results: decrease the noise contribution due to the substrate decrease the number of CR observed Hopefully, membranes will:

Conclusions  The Microwave Kinetic Inductance Detectors have many characteristics that make them ideal for CMB experiments which require large arrays of detectors.  We have developed distributed detectors but with a lumped geometry in order to optimize their coupling to the millimetric radiation.  We have observed a light signal finding absorption efficiencies up to 40%, in good agreement with the theoretical predictions. The model assumed is therefore sound and can be used for further development  The measured NEP is  The next steps:  Further optimization of the single pixel (a new mask is already under test)  Development of KIDs on membranes to check the possibility of using them on balloon-borne and space missions