Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources for gaseous and solid materials mass analysis better than 1 a.m.u. beam current.

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Presentation transcript:

Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources for gaseous and solid materials mass analysis better than 1 a.m.u. beam current from  A, beam scanning system target area up to 5 cm diameter

2MV Van de Graaff ion accelerator RF source for light ions - H, He and their isotopes RBS – beam line in preparation

UHV chamber for thin film deposition e-beam or thermal evaporation

Dual ion miller for TEM specimen preparation Thin film coating unit for SEM sample preparation

TEM – Philips EM keV

TEM – Philips EM400T 120 keV

SEM – Philips EM500 Oxford Instruments EDAX

SEM – JEOL 25N with EPMA (e-microprobe)

ANA HV thin film deposition unit with dual ion beams

EMA 10 – UHV system Surface analysis - LEIS i SIMS (low energy ion scattering and Secondary ion mass spectroscopy)

Balzers SPUTTRON II thin film deposition system d.c. and r.f. sputtering, four target elements, raective deposition

Balzers BAK 550 evaporation system e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor, programmable four layer deposition, reactive evaporation, residual gas analyzer, flash evaporation

Talistep – thin film thickness and surface roughness measurements