2011/12/14 2nd term M1 colloquium Creation of huge metal-insulator domain and its electrical conduction property in VO 2 thin film on TiO 2 (001) substrate.

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Presentation transcript:

2011/12/14 2nd term M1 colloquium Creation of huge metal-insulator domain and its electrical conduction property in VO 2 thin film on TiO 2 (001) substrate Tanaka Laboratory Kenichi Kawatani

contents My research ・ experimental method ・ optical microscope images ・ temperature dependence of resistivity conclusion Background ・ strongly correlated electron system ・ vanadium dioxide (VO 2 ) ・ phase separation (domain)

Strongly Correlated Electron System High-temperature superconductivityColossal Magnetoresistance They have very attractive physical properties. Masatoshi Imada et al. Reviews of Modern Physics, Vol. 70, No. 4, October 1998

Metal-insulator transition in VO 2 Junqiao Wu et al. Nano Lett., Vol. 6, No. 10, 2006 Temperature dependence of resistance in VO 2 nanowire Resistance change so large (about 3 orders of magnitude) heating Cooling

heating Phase transition ~water~ temperature ice ice + water water Phase separate around transition temperature. 0℃0℃

Phase transition ~VO 2 ~ SNIM images of VO 2 around transition temperature M. M. Qazilbash et al. Science 318, 1750 (2007) In the nano-scale region, insulator and metal phases separated around transition temperature. lnsulator Metal

Purpose of my research Metal I research about phase separation in VO 2. I want to observe each electronic phase’s behavior. Insulator

Experimental condition Cr/Pt VO2 Substrate Film thickness 30nm Film size 50×50μm 2 Substrate TiO 2 (001) Sample conditionEquipment PPMS (Physical Property Measurement System) temperature dependence of resistance Optical microscope observe domain Temperature controller

Temperature dependence of resistivity VO 2 turn from insulator to metal around 300K. Phase coexistence

Huge metal-insulator domain Optical microscope images at heating VO 2 (290K to 310K) VO 2 color changed.VO 2 turned from insulator to metal.

290K 10μm Insulator 293K 10μm Metal domain Huge metal-insulator domain Metal-insulator domain size is so large. past one Optical microscope image of VO 2

Strain from substrate VO 2 on TiO 2 (001) is affected by strain from substrate. Lattice parameter of each material Huge domain was caused by strain.

Resistivity jumps Temperature dependence of resistivity in detail (heating) Resistivity change discretely.

Jumps meaning Resistivity changes.Insulator domain turn to metal. 290K 10μm 293K 10μm What do jumps means? Metal domain

One domain’s behavior Same with optical microscope image Relation between resistivity jump and domain size To evaluate domain size, R(T)R(T+ΔT) Insulator Metal L × L μm 2 d× d μm 2 A B RARA RBRB

One domain’s behavior 293K 10μm Resistivity jumpsEach domain’s behavior I could observe one domain’s behavior as resistivity jumps.

Control of each electronic phase Voltage dependence of resistance We want to control each electronic phase by electric field. 290K 10μm 293K 10μm

Conclusion I fabricated VO 2 thin films on TiO 2 (001). ・ huge domain caused by strain ・ resistivity jumps one domain’s behavior 293K 10μm

Resistivity jump TiO2(001)Al2O3(0001) Temperature dependence of resistivity in detail (heating) Resistivity in VO2 on TiO2(001) change discretely.

Resistance susceptivity Change rate Change rate of VO2 on TiO2(001) is 30 times bigger than Al2O3(0001) one. TiO2(001)Al2O3(0001)

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