Extracting During Pumping Ti: Sapphire Amplifiers for ELI Vladimir Chvykov 1, Mikhail Kalashnikov 1,2, Karoly Osvay 1 1 ELI-Hu Nkft., Dugonics ter 13,

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Extracting During Pumping Ti: Sapphire Amplifiers for ELI Vladimir Chvykov 1, Mikhail Kalashnikov 1,2, Karoly Osvay 1 1 ELI-Hu Nkft., Dugonics ter 13, H-6720 Szeged, Hungary 2 Max.Born-Institute, Max-Born-Strasse 2a, Berlin, Germany Extracting During Pumping Ti: Sapphire Amplifiers for ELI Vladimir Chvykov 1, Mikhail Kalashnikov 1,2, Karoly Osvay 1 1 ELI-Hu Nkft., Dugonics ter 13, H-6720 Szeged, Hungary 2 Max.Born-Institute, Max-Born-Strasse 2a, Berlin, Germany Introduction: Recently several ultrahigh intensity Chirped Pulse Amplification (CPA) laser systems have reached petawatt output powers [1,2] setting the next milestone at tens or even hundreds petawatts for the next five to ten years [3,4]. The main limitation that arises on the path toward ultrahigh output power and intensity is the restriction on the pumping and extraction energy imposed by Transverse ASE (TASE) [7] and/or transverse parasitic generation (TPG) within the large aperture amplifier volume [5]. Large aperture Ti: sapphire amplifiers Hercules - final amplifier 12cm Cristal System – 20cm Laser Focus World; Mar 2010; 46, 3; LASERIX – parasitic lasing in final amplifier TPG is a one of main limitations of output energy. The conventional preventive procedure against parasitic generation is to reduce the reflectivity of the side wall of the gain crystals by coating them with an index-matched absorptive polymer layer or liquids. However, the difficulty to introduce exact index matching restricts the diameter of the pump area Two transverse parasitic modes The product of the crystal diameter and the pump fluence is constant for each value of the critical transverse gain or index matching of the absorber and crystal thickness, so that a crystal with a given aperture fixes the maximum pump fluence. Two transverse parasitic modes: 1- the generation near two working parallel surfaces due to the maximal population inversion [5] and 2 - the z-pass between these surfaces due to total internal reflection [6]. The latter surpasses the former in large aperture crystals with a high aspect ratio and respectively low crystal doping. G pt - highest transverse gain compensated by an index-matched absorptive coating, z-crystal thickness, n – index of refraction of the crystal, B -absorption coefficient for the pump frequency. The complete matching is impossible for both polarizations of the transverse modes, so the pump fluence will be limited for any crystals and absorbers. Enlargement of the crystal aperture requires reducing the pump fluence. Dependence the pump flux on crystal diameter for different K-factor ( K=24 – green triangles, K=32 – blue circles, K=42 – brown squares, K=66 boundary curve – purple rhombs); Transverse ASE (TASE) is the more strong limitation of the output energy[7]. Evolution of normalized fluorescence of the crystals vs. pumping time for different crystal apertures Dependence of pump flux on crystal diameter: Solid curves – calculated for. TPG (K=24 - light blue squares, K=32 - green triangles, K=42 - blue squares); dashed curves – calculated for TASE (red squares – B=0.01 Chvykov, J. Nees, K. Krushelnick Optics Communications v.312, Chvykov, J. Nees, K. Krushelnick Optics Communications v.312, 216. (2014) Suppression of the TASE and TPG is a very important task that has to be solved for the next generation of the ultrahigh power laser systems. Extraction During Pumping (EDP) [8] The amplification process is based on energy stored in the upper laser level prior to the arrival of the input signal. We suggest to change method of pumping and amplification in Ti-sapphire amplifiers. Keeping the pumping further after arrival of the amplified pulse we are able to overcome the parasitic lasing limitation for increasing a stored and extracted energy. In the other words, the energy extracted during one pass of the amplified pulse through the crystal could be restored by pumping to the parasitic lasing threshold before the next passKeeping the pumping further after arrival of the amplified pulse we are able to overcome the parasitic lasing limitation for increasing a stored and extracted energy. In the other words, the energy extracted during one pass of the amplified pulse through the crystal could be restored by pumping to the parasitic lasing threshold before the next pass V. Chvykov, V.Yanovsky, S.-W.Bahk, G.Kalintchenko and G.Mourou,, OSA Technical Digest CLEO 2003, paper CWA34 (2003) Frantz – Nodvik equation for EDP - amplifier EDP vs. Conventional amplifier. Optimal aperture of the EDP- amplifiers Optimization of the EDP Multi-pass Amplifiers [9] a b a-dependence the output flux of the 4-pass amplifier on the input one for several pump fluxes (F P = 2 J/cm 2 - two green curves, triangles – EDP amplifier, rhombs – no EDP; F P = 1.3 J/cm 2 – two blue curves, circles - EDP amplifier, crosses – no EDP; F P = 0.8 J/cm 2 EDP-amplifier – purple squares. b - Dependence the output energy on diameter of pumped area for different input energy and K-factor (10 J input energy – K=32 yellow squares, K=42 blue crosses; 50 J – K=32 blue rhombs, K=42 green asterisks, 150 J – K=32 green triangles, K=42purple circles); dashed red curve – damage threshold flux. Several important conclusions: – EDP amplifiers possess the ability to produce significantly more energy (up to four times) compared to regular ones with the same initial pump fluence. – the input flux that saturates the amplifier is much higher than that for the regular case. This is clear from comparison of the two green or two blue curves in Fig.1a. The process of amplification mimics the case of a high value of the saturation flux (F s ), which pushing further theoretical Laser Intensity Limit - Existence optimal aperture of the pump area; - Increasing of the output energy due better fitting of the absorber index refraction; KJ level of extracted energy with existing large aperture Ti: sapphire crystals For a practically available liquid absorber and a crystal with 20 to 25 cm diameter we can calculate the highest output energy for amplification with EDP. The maximum transverse gain this absorber is able to accommodate is 4000, which leads to a value of K= 32. From the blue rhombus curve, we find out the output energy of ~800J, which corresponds to 50 J input energy, which was demonstrated recently with EDP- amplifier. V. Chvykov, K. Krushelnick Optics Communications v.285, 8, (20012) HERCULES-300 TW Laser OPTICS EXPRESS/ 4 February 2008 / Vol. 16, No EDP in the 4-pass amplifier LASERIX- 4-pass EDP - amplifier. Fabien Plé, et allOpt. Lett.,32, 238 (2007) Incident energy – 2.0J, output energy with EDP – 40J, pump area – 6 cm. EDP – experimental results Crystal of 4-pass amplifier was cryogenically cooled to 120K, which prevented the cladding of side surface. Application of EDP increased extracted flux from 0.6 to 1.2 J/cm² J. H. Sung at all, Optics Letters, vol.35, No. 18, pp. 3021, 2010 Incident energy – 4.5J, output energy with EDP – 47J, pump area – 6 cm. Chinese 2 PW CPA – laser, 4-pass EDP-amplifier. Optics Express, 21 (24), (2013) Incident energy – 6.5J, output energy with EDP – 72.6J, pump area – 8.2 cm. Korean 1.5 PW CPA – laser, 3-pass EDP-amplifier. EDP –amplifiers for ELI In the three pillars of ELI, several PW-class lasers have been planned to build. HF PW laser of ELI-ALPS and the L2 laser of the ELI-BEAMLINES with 2 PW peak power and <20 fs pulse duration, while the L4 of the ELI-BEAMLINES as well as the ELI-NP lasers aiming at 300 J / 10 PW lasers. The 200 PW laser facility is still on the roadmap of the ELI consortium. In the three pillars of ELI, several PW-class lasers have been planned to build. HF PW laser of ELI-ALPS and the L2 laser of the ELI-BEAMLINES with 2 PW peak power and <20 fs pulse duration, while the L4 of the ELI-BEAMLINES as well as the ELI-NP lasers aiming at 300 J / 10 PW lasers. The 200 PW laser facility is still on the roadmap of the ELI consortium. ELI-ALPS Main parameters for the ELI-ALPS amplifier are as follows: as the material for cladding of side surface can be used the liquid absorber from [1] (it is able compensate the transverse gain as large as 4000); the diameter of the pump area and the crystal are 8 and 9 cm; the pump energy – 170 J; the input and the output energy are 10 J and 95 J. The dependence of calculated TASE losses for this crystal with thickness of 3cm (purple) and 2cm (blue) measured from the moment of the pump arrival are presented in the left figure. As visible the losses for the EDP-amplifier can be reduced to less than 10% (compare the green curve with the blue one). Three pass EDP amplifier with crystal thickness of 2cm. The output energy is equal ~ 95 J with input -10J. As seen from the curve, the delay between passes 1 and 2 is about 20ns and 2 and 3 – 30 ns, this leads to the construction of amplifier with shoulders 3 and 5 m and with the angle between passes 2 degrees. The shoulders could be reduced with reduced pump pulse duration. ELI-BEAMLINES and ELI-NP The calculated main parameters for ELI-BEAMLINES and ELI-NP amplifiers are: the diameter of the pump area and crystal - 19 and 20 cm, the pump energy – 960 J, the input and the output energy – 60 and 600 J, the losses with the EDP technology can be made under 5%. Pump energy and pulse duration are 960 J and 100 ns respectively. As seen from the figure, the total losses for 4 cm thickness of the crystal is about 70% and for 3 cm – 80% and significant gross begins from 30 and 20 ns of the pump respectively. Dependences of losses for optimal extraction of the 3- pass and 4-pass EDP amplifier with the crystal thickness of 4 cm are demonstrated one the right picture. The amplifier similar to the ELI-ALPS could serve as a seed one. As in first case for 3-pass, the delay between passes 1 and 2 is about 20 ns and 2 and 3 – 30 ns, so the construction of the amplifier will be the same, whereas the scheme with delays between passes of the 4-pass amplifier (15, 20, 30 ns) is presented on the right scheme. Final 3-pass EDP- amplifier Final 4-pass EDP- amplifier Three–pass EDP amplifier with a 19-cm-diameter pump area can approach 500-J energy with a 60-J input, when pumped by 690 J (100 J losses). Four–pass EDP amplifier with a 19-cm-diameter pump area can approach 600-J energy with a 60-J input, when pumped by 960 kJ (28 J losses). ELI-ERIC The 200 PW laser facility is on the roadmap of the ELI consortium As it was demonstrated above, the EDP-amplifiers are able to afford J.As it was demonstrated above, the EDP-amplifiers are able to afford J. Taking in account the compressor transmission efficiency 70% [2], the compressed energy up to 500 J can be expected.Taking in account the compressor transmission efficiency 70% [2], the compressed energy up to 500 J can be expected. Output peak power about 30 PW will be reached in one channel with pulse duration 15 fs.Output peak power about 30 PW will be reached in one channel with pulse duration 15 fs. Seven EDPCPA channels will be enough for approaching 200 PWSeven EDPCPA channels will be enough for approaching 200 PW EDP- amplifiers : Existing technology EDP- amplifiers : Limitations of Technology How Large can be Large aperture Ti:Sapphire crystal? 40-cm with 6-cm thickness is nearly maximum for EDP amplification due to geometric reasons. The amplifier is able to supply 3 kJ/140 PW with 250 J of seed energy while suffering TASE losses of about 207 J. Two EDPCPA channels will be enough for approaching 200 PW Conclusions: We demonstrated that EDPCPA with Ti:Sapphire amplifier is easiest way to reach the required parameters for ELI – pillars. (Higher efficiency, and more softer requirements to pump laser, compared to OPCPA; wider spectral emission compared to Nd: glass amplifier). We demonstrated that EDPCPA with Ti:Sapphire amplifier is easiest way to reach the required parameters for ELI – pillars. (Higher efficiency, and more softer requirements to pump laser, compared to OPCPA; wider spectral emission compared to Nd: glass amplifier). With existing index-matched liquid absorbers and the large aperture Ti: sapphire crystals, it is possible to approach the sub- kJ level of extracted energy by exploiting the EDP method. With existing index-matched liquid absorbers and the large aperture Ti: sapphire crystals, it is possible to approach the sub- kJ level of extracted energy by exploiting the EDP method. With 70% compressor transmission efficiency and 15 fs pulse duration, 30 PW power level could be reached from a single channel and seven EDPCPA channels will be enough for approach to 200 PW With 70% compressor transmission efficiency and 15 fs pulse duration, 30 PW power level could be reached from a single channel and seven EDPCPA channels will be enough for approach to 200 PW EDP amplifier, when operated under the optimal conditions, is capable of increasing the extracted energy by up to four times and more then ten times reduces the losses connected with TASE and TPG EDP amplifier, when operated under the optimal conditions, is capable of increasing the extracted energy by up to four times and more then ten times reduces the losses connected with TASE and TPG The powerfulness of EDPCPA was proved by spreading the method in the other world class laboratories and reaching recently the world record output peak power 2 PW. The powerfulness of EDPCPA was proved by spreading the method in the other world class laboratories and reaching recently the world record output peak power 2 PW. Today’s result: ~ 72J/2 PW, pump area – 8.2 cm.Today’s result: ~ 72J/2 PW, pump area – 8.2 cm. Today’s technology ability: ~700J/30 PW, pump area – 20 cm.Today’s technology ability: ~700J/30 PW, pump area – 20 cm. Future’s technology: ~3kJ/140 PW, pump area – 40 cm.Future’s technology: ~3kJ/140 PW, pump area – 40 cm PW * 7 channels = 210 PettaWatt30 PW * 7 channels = 210 PettaWatt References and links 1. F.Ple, M.Pittman, G.Jamelot, J.P.Chambaret, Optics Letters, 32 3, (2007). 2. J.H.Sung, S.K.Lee, T.J.Yul, T.M.Jeong, J.Lee Optics Letters,35 18, (2010); Optics Express, 21 (24), (2013) 3. es/14684.aspx F.G. Peterson, J. Bonle, D. Price, and B. White,, Optics Letters, 24 14, (1999) 6. M.P. Kalashnikov, V. Karpov, H. Schonnagel, in OSA Technical Digest CLEO 2002, pp , V. Chvykov, J. Nees, K. Krushelnick Optics Communications v.312, 216. (2014) 8. V. Chvykov, V. Yanovsky, S.-W. Bahk, G. Kalintchenko and G. Mourou,, in OSA Technical Digest CLEO 2003, CWA34 9. V. Chvykov, K. Krushelnick Optics Communications v.285, 8, (2012) HERCULES 1eV 1MeV 1GeV 1TeV 1PeV HERCULES 1eV 1MeV 1GeV 1TeV 1PeV Next steps in the future